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96-TFBGA
(534 pièces au total)Numéro de pièce fabricant | Description | Fabricant | En stock | Opération |
---|---|---|---|---|
MT41K256M16HA-125:E TR | Memory IC with 4Gbit capacity, operating at 800 MHz and 13.75 ns | Micron Technology Inc. | 8 400 | Add to BOM |
MT41K256M16LY-107:N TR | Advanced DDR SDRAM technology for improved computing efficienc | Micron Technology Inc. | 7 695 | Add to BOM |
MT40A512M16JY-083E:B TR | Low Voltage 1.2V DDR4 SDRAM Chip in 512Mx16 Configuration | Micron Technology Inc. | 9 006 | Add to BOM |
MT40A512M16JY-083E IT:B TR | High-density memory module | Micron Technology Inc. | 5 434 | Add to BOM |
MT40A256M16GE-062E:B | High-quality DDR DRAM memory for reliable performanc | Micron Technology Inc. | 5 059 | Add to BOM |
IS46TR16256A-125KBLA2 | Low-latency, high-bandwidth DDR DRAM component offering B storage in a compact FBGA- form facto | ISSI, Integrated Silicon Solution Inc | 8 060 | Add to BOM |
MT41K256M16HA-125IT:E | A premium-grade DDR3 SDRAM chip for enterprise-level computing needs | Micron Technology Inc. | 5 345 | Add to BOM |
MT41K128M16JT-125:K TR | Ideal for servers, workstations, and desktop computer | Micron Technology Inc. | 6 747 | Add to BOM |
AS4C256M16D3C-12BIN | This product, AS4C256M16D3C-12BIN, is a DDR SDRAM module with FBGA-96(7.5x13.5) form factor and ROHS compliance | Alliance Memory, Inc. | 9 040 | Add to BOM |
AS4C256M16D3LC-12BCN | Up to 800MHz Speed for High Performance Applications | Alliance Memory, Inc. | 6 748 | Add to BOM |
IS43TR16128D-125KBLI | DRAM Chip DDR3 SDRAM 2Gbit 128Mx16 1.5V 96-Pin TW-BGA | ISSI, Integrated Silicon Solution Inc | 8 956 | Add to BOM |
AS4C256M16D3LC-10BIN | Ultra-thin package design enables reduced power consumption and increased thermal performanc | Alliance Memory, Inc. | 8 834 | Add to BOM |
IS43TR16512B-125KBLI | Low power consumption of 1.5V for energy efficiency | ISSI, Integrated Silicon Solution Inc | 9 158 | Add to BOM |
MT40A512M16LY-062E:E | Micron memory module | Micron Technology Inc. | 7 982 | Add to BOM |
W632GG6KB-15 | 2Gbit DDR3 SDRAM chip | Winbond Electronics | 8 573 | Add to BOM |
IS43TR16128C-15HBLI | RoHS compliant DDR SDRAM | ISSI, Integrated Silicon Solution Inc | 5 517 | Add to BOM |
MT41K64M16TW-107 IT:J | Top-of-the-line DDR dynamic random-access memory module featuring a storage capacity of 64 million 16-bit words | Micron Technology Inc. | 8 200 | Add to BOM |
AS4C512M16D3LB-12BIN | Ultra-reliable bit DDR SDRAM module for mission-critical systems | Alliance Memory, Inc. | 8 415 | Add to BOM |
AS4C256M16D3LC-12BIN | 1.35V low voltage operation for energy efficiency | Alliance Memory, Inc. | 7 837 | Add to BOM |
IS43TR16256BL-107MBL | Advanced semiconductor component for industrial and commercial use cases | ISSI, Integrated Silicon Solution Inc | 7 498 | Add to BOM |
BC417143B-IQN-E4 | High-Quality IC for Wireless Connectivity | Qualcomm | 6 890 | Add to BOM |
AS4C256M16D4-83BIN | A crucial component for modern computing, perfect for upgrading and building new system | Alliance Memory, Inc. | 5 759 | Add to BOM |
MT40A1G16RC-062E IT:B | DDR SDRAM MT40A1G16RC-062E IT:B FBGA-96 ROHS | Micron Technology Inc. | 6 332 | Add to BOM |
AS4C256M16D4-83BCN | 256M x 16 configuration | Alliance Memory, Inc. | 5 125 | Add to BOM |
MT41K256M16TW-107:P TR | High-Density DRAM | Micron Technology Inc. | 9 868 | Add to BOM |
AS4C512M16D4-75BCN | High-density DDR4 SDRAM chip with a capacity of 8Gbit | Alliance Memory, Inc. | 7 163 | Add to BOM |
MT41K256M16TW-107 IT:P TR | Fast and efficient SDRAM module for high-performance computi | Micron Technology Inc. | 7 588 | Add to BOM |
MT41K128M16JT-125 IT:K TR | The MT41K128M16JT-125 IT:K TR is a state-of-the-art DDR SDRAM module that is ideal for demanding computing tasks | Micron Technology Inc. | 5 523 | Add to BOM |
IS43TR16128CL-125KBLI | Compact -ball BGA package measures only m x m | ISSI, Integrated Silicon Solution Inc | 8 181 | Add to BOM |
W632GU6KB-12 | Advanced WBGA-96 form factor for easy integration into various electronic devices requiring fast and efficient memory storage | Winbond Electronics | 7 982 | Add to BOM |
W632GG6KB-12 | With its powerful Cortex-M3 architecture | Winbond Electronics | 9 834 | Add to BOM |
MT41K128M16JT-125 AIT:K | DRAM Chip DDR3L SDRAM 2Gbit 128Mx16 1.35V Automotive 96-Pin FBGA Tray | Micron Technology Inc. | 5 407 | Add to BOM |
MT41K512M16VRN-107 AIT:P | SDRAM - DDR3L Memory IC 8Gbit Parallel 933 MHz 20 ns 96-FBGA (8x14) | Micron Technology Inc. | 7 887 | Add to BOM |
MT41K64M16TW-107 AIT:J | DRAM, DDR3 SDRAM, 1Gb, x16, 1.35V, 96-ball FBGA, RoHS | Micron Technology Inc. | 7 269 | Add to BOM |
MT40A256M16GE-083E:B | DRAM Chip DDR4 SDRAM 4G-Bit 256M x 16 1.2V 96-Pin TF-BGA | Micron Technology Inc. | 8 720 | Add to BOM |
MT41K256M16TW-107 AUT:P | Active BOTTOM Volatile SYNCHRONOUS ic memory -40C~125C TC 1.283V 4294967296bit 8mm | Micron Technology Inc. | 5 299 | Add to BOM |
MT40A512M16LY-062E AAT:E | DRAM, DDR4, 8Gb, x16, 96-ball FBGA, RoHS | Micron Technology Inc. | 6 245 | Add to BOM |
MT40A256M16LY-062E AUT:F | Active Volatile ROHS3Compliant Parallel ic memory -40C~125C TC 1.14V~1.26V 4Gb 256M x 16 19ns | Micron Technology Inc. | 8 014 | Add to BOM |
IS46TR16128CL-125KBLA2 | DDR SDRAM, 128Mx16, 1.35V, 8K, BGA-96,RoHS | ISSI, Integrated Silicon Solution Inc | 9 265 | Add to BOM |
MT41J128M16JT-093:K | DRAM Chip DDR3 SDRAM 2G-Bit 128Mx16 1.5V 96-Pin F-BGA | Micron Technology Inc. | 8 520 | Add to BOM |
MT41K64M16TW-107 AAT:J | DRAM, DDR3 SDRAM, 1Gb, x16, 1.35V, 96-ball FBGA, RoHS | Micron Technology Inc. | 9 512 | Add to BOM |
MT41K256M16TW-107 AAT:P | DDR34G256MX16FBGA, TRAY, DRAM; DDR34G256MX16FBGA, TRAY, DRAM | Micron Technology Inc. | 5 701 | Add to BOM |
MT40A2G16SKL-062E:B | IC DRAM 32GBIT PARALLEL 96FBGA | Micron Technology Inc. | 7 678 | Add to BOM |
MT41K64M16TW-107 | IC DRAM 1GBIT PAR 96FBGA | MICROM | 6 554 | Add to BOM |
MT40A512M16TD-062E AUT:R | Automotive-grade DDR4 memory module" | Micron Technology | 4 711 | Add to BOM |
TLC6983ZXLR | 2.5V~5.5V NFBGA-96(6x6) LED Display Drivers ROHS | Texas Instruments | 6 499 | Add to BOM |
H5AN4G6NBJR-XNI | Low-latency, high-capacity SDRAM solution delivering unparalleled performance and efficiency for compute-heavy environment | Netlist Inc. | 2 375 | Add to BOM |
MT40A512M16TD-062E AAT:R TR | MT40A512M16TD-062E AAT:R TR,'High-capacity RAM solution for data-intensive applications | Micron Technology | 2 771 | Add to BOM |
MT40A512M16TD-062E AIT:R | High-speed DDRDRAM module offering B of storage capacity and improved data transfer rates | Micron Technology | 2 707 | Add to BOM |
MT40A512M16TD-062E AUT:R TR | Enhanced Performance and Capacity for Next-Gen Ca | Micron Technology | 5 579 | Add to BOM |
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