Ce site web utilise des cookies. En utilisant ce site, vous consentez à l'utilisation de cookies. Pour plus d'informations, veuillez consulter notre politique de confidentialité.
PG-TDSON-8
(272 pièces au total)Numéro de pièce fabricant | Description | Fabricant | En stock | Opération |
---|---|---|---|---|
IPG20N06S2L-65A | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R | Infineon Technologies Corporation | 2 002 | Add to BOM |
IAUC64N08S5L075ATMA1 | N-Channel 80 V 64A (Tj) 75W (Tc) Surface Mount PG-TDSON-8-33 | Infineon Technologies Corporation | 2 398 | Add to BOM |
BSC020N03LSGATMA1 | Trans MOSFET N-CH 30V 28A 8-Pin TDSON EP T/R | Infineon Technologies Corporation | 3 368 | Add to BOM |
IPLK70R750P7ATMA1 | High-power N-channel power MOSFET designed for demanding application | Infineon Technologies Corporation | 2 914 | Add to BOM |
IPLK70R2K0P7ATMA1 | Compact design with exceptional current handling for industrial use case | Infineon Technologies Corporation | 3 403 | Add to BOM |
IPLK60R600PFD7ATMA1 | Powerful switching solution for high-voltage, high-current system | Infineon Technologies Corporation | 2 531 | Add to BOM |
IPLK60R360PFD7ATMA1 | Robust and reliable device for demanding industrial automation and automotive systems | Infineon Technologies Corporation | 2 384 | Add to BOM |
IPLK60R1K5PFD7ATMA1 | N-Channel Power MOSFET solution for demanding applications up t | Infineon Technologies Corporation | 2 920 | Add to BOM |
BSC22DN20NS3GATMA1 | N-channel MOSFET with current rating and compact TDSON-packag | Infineon Technologies Corporation | 2 381 | Add to BOM |
BSC12DN20NS3GATMA1 | Compact and robust transistor design with high voltage ratin | Infineon Technologies Corporation | 2 530 | Add to BOM |
BSC900N20NS3GATMA1 | Low-loss, high-reliability power device for industrial control (54 chars) | Infineon Technologies Corporation | 3 226 | Add to BOM |
BSC120N12LSGATMA1 | trench MOSFET for high-performance circuit design | Infineon Technologies Corporation | 2 349 | Add to BOM |
BSC080N12LSGATMA1 | Efficient voltage regulation and power control solution | Infineon Technologies Corporation | 2 272 | Add to BOM |
IAUC26N10S5L245ATMA1 | Reliable operation up to with high current handling capabiliti | Infineon Technologies Corporation | 2 422 | Add to BOM |
IAUC100N10S5L054ATMA1 | High Power N Channel MOSFET | Infineon Technologies Corporation | 3 786 | Add to BOM |
ISC0805NLSATMA1 | Robust and reliable solution for demanding DC/DC converter design | Infineon Technologies Corporation | 2 888 | Add to BOM |
IAUC50N08S5L096ATMA1 | N-Channel Transistor Power MOSFET 80V 50A | Infineon Technologies Corporation | 2 284 | Add to BOM |
IAUC28N08S5L230ATMA1 | Power MOSFET, N-Channel, 80V, 28A, 0.015 ohm, TDSON, Surface Mount | Infineon Technologies Corporation | 2 475 | Add to BOM |
IAUZ40N08S5N100ATMA1 | 80V, 40A, 10mΩ, 18.6nC, QFN 3x3 OptiMOS™ 5 | Infineon | 9 458 | Add to BOM |
ISC0602NLSATMA1 | Reliable and efficient power management for a wide range of load | Infineon Technologies Corporation | 2 475 | Add to BOM |
BSC155N06NDATMA1 | Low on-state resistance for efficient current fl | Infineon Technologies Corporation | 3 362 | Add to BOM |
BSC112N06LDATMA1 | Product BSC112N06LDATMA1 is a N-Channel MOSFET with a 60V voltage rating | Infineon Technologies Corporation | 3 522 | Add to BOM |
ISC0702NLSATMA1 | High-frequency switching and low-loss performance in a small footprint packag | Infineon Technologies Corporation | 2 117 | Add to BOM |
IAUC120N06S5N011ATMA1 | Precise control and high current handling for sensitive systems | Infineon Technologies Corporation | 3 480 | Add to BOM |
BSC019N06NSATMA1 | High-power MOSFET for demanding application | Infineon Technologies Corporation | 3 796 | Add to BOM |
IAUC41N06S5N102ATMA1 | Automotive Grade AEC-Q101 Power Mosfet | Infineon Technologies Corporation | 3 278 | Add to BOM |
ISC0703NLSATMA1 | N-channel 60V 13A Transistor with TDSON EP Package | Infineon Technologies Corporation | 2 754 | Add to BOM |
IAUC120N06S5L011ATMA1 | Reliable and efficient power mosfet solution for electric vehicle chargers, DC-DC converters and motor drive | Infineon Technologies Corporation | 3 968 | Add to BOM |
ISC028N04NM5ATMA1 | Tape and reel packaged N-channel MOSFET with 40V voltage rating and 24A current rating in an 8-pin TDSON EP package | Infineon Technologies Corporation | 2 211 | Add to BOM |
ISC007N04NM6ATMA1 | Robust and compact design for demanding industrial condition | Infineon Technologies Corporation | 3 594 | Add to BOM |
ISC046N04NM5ATMA1 | The ISC046N04NM5ATMA1 MOSFET is engineered for N-Channel operation with a 40V voltage tolerance and 19A current capability | Infineon Technologies Corporation | 3 079 | Add to BOM |
IPG20N04S4L18AATMA1 | Robust and efficient power management solution for electric vehicles, hybrids and conventional cars | Infineon Technologies Corporation | 3 847 | Add to BOM |
BSC010N04LSTATMA1 | Robust and efficient device for advanced DC-DC converter system | Infineon Technologies Corporation | 2 812 | Add to BOM |
ISC017N04NM5ATMA1 | High current capacity for this N-Channel MOSFET | Infineon Technologies Corporation | 3 197 | Add to BOM |
ISC019N04NM5ATMA1 | N Channel Power Transistor | Infineon Technologies Corporation | 2 877 | Add to BOM |
BSC076N04NDATMA1 | Excellent thermal performance and high-speed switching capabilitie | Infineon Technologies Corporation | 3 681 | Add to BOM |
BSC010N04LSCATMA1 | Advanced gate technology enables fast switching times with minimal capacitance | Infineon Technologies Corporation | 3 894 | Add to BOM |
BSC0906NSATMA1 | Advanced power electronic component for high-frequency switching circuits | Infineon Technologies Corporation | 3 240 | Add to BOM |
BSC0901NSIATMA1 | Robust and versatile power transistor for DC-DC converters and battery charger | Infineon Technologies Corporation | 3 918 | Add to BOM |
ISC045N03L5SATMA1 | Low-on-state resistance ensures reduced power consumption and heat generatio | Infineon Technologies Corporation | 2 623 | Add to BOM |
BSC005N03LS5IATMA1 | Compact design enables easy integration into complex systems | Infineon Technologies Corporation | 3 017 | Add to BOM |
BSC005N03LS5ATMA1 | High-performance MOSFET solution for advanced electronic designs | Infineon Technologies Corporation | 3 080 | Add to BOM |
ISC019N03L5SATMA1 | Next-generation N-channel MOSFETs for reliable high-power switchin | Infineon Technologies Corporation | 2 651 | Add to BOM |
BSC0501NSIATMA1 | Advanced N-channel MOSFET technology for efficient energy transf | Infineon Technologies Corporation | 2 009 | Add to BOM |
BSC052N03LSATMA1 | Efficient power device with high current capaci | Infineon Technologies Corporation | 3 041 | Add to BOM |
ISC037N03L5ISATMA1 | High-performance MOSFET for A, Ω @ V operatio | Infineon Technologies Corporation | 3 245 | Add to BOM |
ISC011N03L5SATMA1 | High-performance N-channel power transistor for automotive and industrial applications | Infineon Technologies Corporation | 2 273 | Add to BOM |
ISC026N03L5SATMA1 | High-power N-channel MOSFET for demanding application | Infineon Technologies Corporation | 3 726 | Add to BOM |
BSC009NE2LSATMA1 | Reliable V operation supports a wide range of industrial control, motor drive, and power supply application | Infineon Technologies Corporation | 2 286 | Add to BOM |
BSC015NE2LS5IATMA1 | Advanced V, Ω@A, V, and @A N-channel TDSON-MOSFETs for robust application | Infineon Technologies Corporation | 2 701 | Add to BOM |
Autre forfait