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SOT23
(212 pièces au total)Numéro de pièce fabricant | Description | Fabricant | En stock | Opération |
---|---|---|---|---|
ZXM61P03F | MOSFET with P-channel enhancement mode | Diodes Incorporated | 9 583 | Add to BOM |
BCW66KH | RoHS Compliant Package-3 | Infineon | 6 245 | Add to BOM |
DMN61D8LQ | Combined Relay and Inductive Load Driver | diodes incorporated | 6 362 | Add to BOM |
SI2307CDS-T1-E3 | P-Channel 30 V (D-S) MOSFET | VISHAY | 5 744 | Add to BOM |
24AA025E64T-I/OT | Serial EEPROM with I2C Interface | Microchip Technology | 5 432 | Add to BOM |
TL431AIL3T | Shunt Voltage Reference IC Adjustable 2.495V 36 VV ±1% 100 mA SOT-23-3 | STMicroelectronics | 5 178 | Add to BOM |
BAR43SFILM | Rectifier Diode, Schottky, 2 Element, 0.1A, 30V V(RRM), Silicon | STMICROELECTRONICS | 7 855 | Add to BOM |
BAR43FILM | Diode 30 V 100mA Surface Mount SOT-23-3 | STMICROELECTRONICS | 7 378 | Add to BOM |
STM809LWX6F | Monitors power supply for safe operation | Stmicroelectronics | 8 184 | Add to BOM |
STM809MWX6F | The STM809MWX6F offers precise voltage monitoring and control for demanding systems | ST | 5 200 | Add to BOM |
IRLML0030TRPBF | Low power consumption of 1.3W at 27mΩ | Infineon | 6 685 | Add to BOM |
IRLML2030TRPBF | The IRLML2030TRPBF is an N-channel HEXFET Power MOSFET | Infineon | 7 026 | Add to BOM |
IRLML2244TRPBF | High-power P-channel MOSFET for demanding applications | Infineon | 5 227 | Add to BOM |
IRLML2246TRPBF | P-Channel MOSFET in Tape and Reel Packaging | Infineon | 9 252 | Add to BOM |
ZXMN10A07F | ZXMN10A07F: A SOT-23 MOSFET rated for 100V with a resistance of 700mΩ, meeting ROHS requirements | diodes incorporated | 5 884 | Add to BOM |
ZXMP6A13F | P-Channel Enhancement Mode MOSFET, Product ZXMP6A13F, is described as follows:" | diodes incorporated | 5 514 | Add to BOM |
BZX84-B16 | Precision voltage regulation for modern electronics | Diotec Semiconductor | 2 087 | Add to BOM |
BAT54S | BAT54S: The perfect choice when you need a small | Onsemi | 5 595 | Add to BOM |
FMMT413 | FMMT413 Product Description: Small Signal Bipolar Transistor, NPN, Silicon | diodes incorporated | 5 465 | Add to BOM |
ZXMN3A14F | N-Channel MOSFET with Enhancement Mode | diodes incorporated | 7 530 | Add to BOM |
ZXMN2F34FH | N-type Transistor | diodes incorporated | 8 177 | Add to BOM |
ZXMN3B14F | N-Channel MOSFET with Enhancement Mode | diodes incorporated | 5 952 | Add to BOM |
ZXMN2B14FH | Silicon Metal-oxide Semiconductor FET in SOT-23 package with 3 pins | diodes incorporated | 5 122 | Add to BOM |
ZXMP3A13F | Low Power Consumption FET, Ideal for Portable Electronics | diodes incorporated | 8 564 | Add to BOM |
ZVP1320F | Metal oxide semiconductor field-effect transistor | diodes incorporated | 8 562 | Add to BOM |
ZVN3320F | N-channel MOSFET ZVN3320F operates in enhancement mode | Diodes Incorporated | 6 460 | Add to BOM |
ZXTN25020DFH | NPN, 20V, 4.5A, SOT23 | diodes incorporated | 6 317 | Add to BOM |
FMMT634 | FMMT634 Darlington Transistors | diodes incorporated | 9 301 | Add to BOM |
FMMT620 | Offers exceptional voltage handling and speed, making it a popular selection for DC-DC converters and inverter | diodes incorporated | 7 252 | Add to BOM |
FMMT555 | FMMT555: Bipolar Junction Transistors | diodes incorporated | 5 738 | Add to BOM |
FMMT591A | ROHS compliant BJT Bipolar Transistors | Diodes Incorporated | 9 172 | Add to BOM |
FMMT493A | Robust and reliable components for advanced electronic designs | diodes incorporated | 7 026 | Add to BOM |
DMN2075U | N-Channel MOSFET with Enhancement Mode | diodes incorporated | 6 392 | Add to BOM |
DMN3300U | DMN3300U: N-Channel Enhancement Mode MOSFET Product Description | diodes incorporated | 8 535 | Add to BOM |
DMP2004K | Enhancement Mode P-Channel MOSFET | diodes incorporated | 9 948 | Add to BOM |
DDTC123ECA | Bipolar Transistors with Predetermined Bias | diodes incorporated | 9 036 | Add to BOM |
BAP64-05 | Diode made of silicon | NXP Semiconductors | 6 752 | Add to BOM |
BAS40-04 | Efficient voltage regulator and current limiter for electronic circuit | GOOD-ARK ELECTRONICS CO LTD | 9 665 | Add to BOM |
BAP64-06 | PIN diode made of silicon | micro commercial components (mcc) | 5 433 | Add to BOM |
5JL2CZ47 | High-power TO220NIS2 diode for phase-out and obsolete use cases | TOSHIBA CORP | 9 267 | Add to BOM |
2SA1464-T1B-A | Transistors - BJT | Renesas Electronics | 9 458 | Add to BOM |
SSM3J15F | 100mA, 30V FET transistor | Toshiba | 9 458 | Add to BOM |
BCX42E6327 | BCX42E6327: An Infineon-manufactured PNP Bipolar Transistor, designed for applications up to 800 mA and 125 V, enclosed in a 3-Pin SOT-23 package | Infineon Technologies Corporation | 3 655 | Add to BOM |
AD8638ARJZ | Compact 16V CMOS device offers high gain | Analog Devices, Inc | 3 644 | Add to BOM |
AD8061ART | High-quality component for amplifying low-level signals accurately | Analog Devices, Inc | 2 041 | Add to BOM |
ZXTP2039F | Explore the features of ZXTP2039F, a Bipolar Junction Transistor (BJT) product | diodes incorporated | 7 018 | Add to BOM |
ZXTP2025F | Bipolar transistors - BJT | diodes incorporated | 5 302 | Add to BOM |
ZXMN2B01F | Small signal field-effect transistor with a drain current of 0 | diodes incorporated | 9 363 | Add to BOM |
XC6206P331MR-G | This LDO voltage regulator ensures stable output voltage even under varying input conditions | TOREX | 3 688 | Add to BOM |
NX2301P | Ideal for low voltage applications requiring high efficiency and space-saving design | nexperia | 9 493 | Add to BOM |
Autre forfait