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TO-204AE

(16 pièces au total)
Numéro de pièce fabricant Description Fabricant En stock Opération
JANTX2N6766 Power MOSFET with N-channel configuration, capable of handling up to 200V and 30A current, housed in a TO-3 package Microsemi Corporation 6 617 Add to BOM
IRF150 Robust and Reliable for High-Temperature Applicatio Infineon 9 663 Add to BOM
IRF140 100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package - A IRF140 with Hermetic PackagingBenefits TT Electronics 9 323 Add to BOM
MJ11028 Silicon NPN Darlington Power Transistor NTE Electronics, Inc 5 692 Add to BOM
MJ11033G Bipolar (BJT) Transistor PNP - Darlington 120 V 50 A 300 W Through Hole TO-204 (TO-3) Fairchild Semiconductor 6 089 Add to BOM
MJ11028G Bipolar (BJT) Transistor NPN - Darlington 60 V 50 A 300 W Through Hole TO-204 (TO-3) Sanyo 9 744 Add to BOM
IRF460 Advanced power electronics component for high-voltage DC-DC converters, motor drives, and power supplies Infineon 2 687 Add to BOM
IRF250 Robust package design features a 200V rated voltage and 30A current handling Infineon 6 405 Add to BOM
IRF240 Power electronics solution for motor drives, lighting systems, and power supplies Infineon 6 435 Add to BOM
JANTX2N6764 38 A 100 V 0.065 ohm N-CHANNEL Si POWER MOSFET TO-204 Microsemi Corporation 5 620 Add to BOM
JANTX2N6770 N-Channel 500 V 12A (Tc) 4W (Ta), 150W (Tc) Through Hole TO-3 Microsemi Corporation 5 886 Add to BOM
JANTXV2N5686 Advanced TO-3 package design for reliable operation Microchip Technology 7 966 Add to BOM
JANTXV2N6764 Compact TO-E package allows for efficient PCB layout and minimal space usag Infineon 6 021 Add to BOM
JANTX2N5686 V, A, and of robust power handlin Microchip Technology 6 281 Add to BOM
GE10020 Bipolar (BJT) Transistor NPN - Darlington 300 V 60 A 250 W Through Hole TO-204AE Harris Corporation 9 579 Add to BOM
IXGM20N60 IGBT 600 V 40 A 150 W Through Hole TO-204AE IXYS 5 156 Add to BOM