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TO-220-3
(3791 pièces au total)| Numéro de pièce fabricant | Description | Fabricant | En stock | Opération |
|---|---|---|---|---|
| BUK101-50GS | oxide semiconductor fet, power field-effect transistor, n-channel | PHILIPS SEMICONDUCTORS | 6 493 | Add to BOM |
| BUK100-50GL | Robust and reliable performance for demanding applicatio | NXP Semiconductors | 7 615 | Add to BOM |
| BUK101-50GL | Power MOSFET, N-Channel | NXP USA Inc. | 8 248 | Add to BOM |
| BTA30-800CW3G | TRIAC Standard 800 V 30 A Through Hole TO-220AB | Littelfuse | 9 458 | Add to BOM |
| BTA25-800CW3G | Triacs with ISO TO220 Package, 25A Rating, and 35mA Gate Trigger Current | Littelfuse Inc. | 5 808 | Add to BOM |
| IRG4BC40WPBF | High-current Insulated Gate Bipolar Transistor for Power Applications | Infineon | 9 458 | Add to BOM |
| IRG4BC40SPBF | High-power N-channel IGBT chip for efficient power conversio | Infineon | 9 458 | Add to BOM |
| IRG4BC30WPBF | 23A High Current Capability IGBTs | Infineon | 9 458 | Add to BOM |
| IRG4BC30KPBF | Insulated Gate Bipolar Transistor with 600 Volts, 28 Amps, and 100 Watts in TO220AB package | International Rectifier | 5 527 | Add to BOM |
| IRG4BC30FPBF | Fast IGBT Transistors with 600V Rating for 1-8kHz | International Rectifier | 7 233 | Add to BOM |
| IRG4BC20UPBF | Ultrafast IGBT power transistors designed for switching frequencies ranging from 8 to 60kHz at 600V | Infineon | 9 458 | Add to BOM |
| IRG4BC10KDPBF | TO-220AB 3-Pin Infineon IRG4BC10KDPBF IGBT, 9 A 600 V | Infineon | 9 458 | Add to BOM |
| IXGP70N33TBM-A | IGBT CHIP FOR TRANSISTOR WITH N-TYPE CHANNEL RATED FOR 600 VOLTS AND 14 AMPS, IN A 3-PIN(3+TAB) CONFIGURATION, TO-220AB PACKAGE | IXYS | 6 220 | Add to BOM |
| IRGBF20F | Trustworthy Power MOSFET Module | Infineon Technologies | 7 603 | Add to BOM |
| IRGBC30F | With a 3+Tab pin arrangement, this Trans IGBT Chip is easy to install and provides reliable operation | Infineon | 9 883 | Add to BOM |
| IRGB4059DPBF | 3-Pin TO-220AB Tube | International Rectifier | 8 421 | Add to BOM |
| IKP15N65H5 | Transistor chip utilizing insulated gate bipolar transistor technology | Infineon Technologies | 8 638 | Add to BOM |
| IKP15N65F5 | Designed for robust and reliable power control applications, IKPNFis an efficient high-voltage Power MOSFET chip solutio | Infineon Technologies | 7 100 | Add to BOM |
| IRG4BC40S | Power rating of 160W | Infineon Technologies | 7 118 | Add to BOM |
| HGTP10N50E1D | 75W IGBTs capable of handling 17.5A current and 500V voltage, packaged in TO-220 with ROHS certification | Harris Corporation | 5 441 | Add to BOM |
| IRG4BC30SPBF | 30 Amp, 600V through-hole IGBT module ideal for industrial control, motor drives, and renewable energy systems | International Rectifier | 7 690 | Add to BOM |
| NTE5671 | NTE5671, a 4-quadrant logic level TRIAC, boasts an 800V V(DRM) and a 16A I(T)RMS rating | NTE Electronics, Inc | 6 429 | Add to BOM |
| NTE56028 | 800-volt, 350-amp TRIAC in a TO-220 package" | NTE Electronics, Inc | 6 394 | Add to BOM |
| NTE56006 | 15 Amps, 400 Volts, TO-220 TRIAC with 4-quadrant logic level operation | NTE Electronics, Inc | 6 560 | Add to BOM |
| NTE56010 | 4 Quadrant Logic Level TRIAC with 800V V(DRM) and 15A I(T)RMS | NTE Electronics, Inc | 6 232 | Add to BOM |
| NTE5645 | TO-220 Isolated TRIAC 600V 100A 3-Pin | NTE Electronics, Inc | 8 648 | Add to BOM |
| BTA16-800BW3G | TRIAC Standard 800 V 16 A Through Hole TO-220AB | Littelfuse | 9 458 | Add to BOM |
| BTA16-600BW3G | TRIAC Standard 600 V 16 A Through Hole TO-220AB | Littelfuse | 9 458 | Add to BOM |
| NTE56004 | 40mA 50mA 200V TO-220 TRIACs ROHS | NTE Electronics, Inc | 7 330 | Add to BOM |
| IXYP20N65C3D1 | High voltage, high current, and high power IGBT chip for industrial use | IXYS | 9 341 | Add to BOM |
| NTE5620 | TO-220 Full-Pack TRIAC rated at 800V and 100A | NTE Electronics, Inc | 5 884 | Add to BOM |
| MAC12NG | TRIAC Standard 800 V 12 A Through Hole TO-220AB | Littelfuse Inc. | 5 349 | Add to BOM |
| NTE5637 | Product NTE5637: A TRIAC device engineered for voltages up to 600V and currents up to 110A, structured with 3 pins and 3 tabs within a TO-220 casing | NTE Electronics, Inc | 6 065 | Add to BOM |
| NTE56008 | TRIAC for 600 volts with a current rating of 150 amperes and a 3-pin configuration in a TO-220 package | NTE Electronics, Inc | 6 968 | Add to BOM |
| BTA16-600CW3G | TRIAC Standard 600 V 16 A Through Hole TO-220AB | Littelfuse | 9 458 | Add to BOM |
| NTE5638 | Compact TO-B package for space-constrained design | NTE Electronics, Inc | 5 382 | Add to BOM |
| BTA16-800CW3G | TRIAC Standard 800 V 16 A Through Hole TO-220AB | Littelfuse Inc. | 5 545 | Add to BOM |
| NTE5635 | The TO-220AB package contains 3 pins for easy installation | NTE Electronics, Inc | 5 097 | Add to BOM |
| NTE56017 | Robust electronic switch ideal for motor control systems | NTE Electronics, Inc | 7 072 | Add to BOM |
| NTE56020 | Isolated TO-220 triac rated at 400 volts and 250 amperes | NTE Electronics, Inc | 7 368 | Add to BOM |
| MAC9NG | TRIAC 800V 80A 3-Pin(3+Tab) TO-220AB Rail | Littelfuse | 9 458 | Add to BOM |
| RFP4N100 | TO-220AB N-Channel MOSFET for Power Applications | onsemi | 6 131 | Add to BOM |
| IRGBC30U | Insulated Gate Bipolar Transistor with N-Channel design and 600V voltage rating | Infineon Technologies | 9 287 | Add to BOM |
| CLA40MT1200NPB | TRIAC Standard 1.2 kV 44 A Through Hole TO-220-3 | IXYS | 8 759 | Add to BOM |
| SIHP22N60E-GE3 | N-Channel 600 V 21A (Tc) 227W (Tc) Through Hole | VISHAY INTERTECHNOLOGY INC | 7 168 | Add to BOM |
| FERD40H100STS | Diode 100 V 40A Through Hole TO-220AB | STMicroelectronics | 8 444 | Add to BOM |
| KSA473YTSTUA | KSA473YTSTUA - PNP Epitaxial Silicon Transistor Description | onsemi | 7 639 | Add to BOM |
| IXFP34N65X2 | 650V 34A N-Channel Mosfet | Littelfuse | 6 180 | Add to BOM |
| IXFP22N65X2 | Trans MOSFET N-CH 650V 22A 3-Pin(3+Tab) TO-220AB | IXYS | 5 218 | Add to BOM |
| IXTP80N075L2 | IXTP80N075L2, classified as a Power Field-Effect Transistor | IXYS | 9 767 | Add to BOM |
Autre forfait