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TO-220FP-3
(131 pièces au total)| Numéro de pièce fabricant | Description | Fabricant | En stock | Opération |
|---|---|---|---|---|
| 2SK2662 | MOSFET 220NIS2 PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-01)/OBSOLETE(10-04), | Toshiba | 9 458 | Add to BOM |
| D5LC40 | Rectifiers Low Loss Diode | SHINDENGEN ELECTRIC MANUFACTURING CO LTD | 5 706 | Add to BOM |
| STF10P6F6 | Trans MOSFET P-CH 60V 10A 3-Pin(3+Tab) TO-220FP Tube | STMicroelectronics | 9 458 | Add to BOM |
| 2SK2417 | MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OBSOLETE(11-04), | Toshiba | 2 000 | Add to BOM |
| FDPF7N50U | Power MOSFET, N-Channel, UniFETTM, Ultra FRFETTM, 500V, 5A, 1.5Ω, TO-220F | Onsemi | 7 537 | Add to BOM |
| 2SK2508 | The phase-out process for MOSFET 220NIS2 PLN began in October 2010 and was completed by January 2011 when it became obsolete | Toshiba | 2 208 | Add to BOM |
| 2SK3565 | Advanced Power Management Solution for Your Applications | Toshiba | 5 320 | Add to BOM |
| IRFI740G | Substitute suggestion for IRFI740G MOSFET | Vishay | 5 629 | Add to BOM |
| DSA30C100PN | Ultra-fast recovery times minimize energy losses and optimize system performance | Ixys | 4 291 | Add to BOM |
| D6L20U | Robust , silicon diode for demanding applications | Shindengen | 2 666 | Add to BOM |
| BUL312FP | High-speed switching transistor for demanding applicatio | Stmicroelectronics | 2 666 | Add to BOM |
| 2SD1407A-Y(F) | Transistors with NPN bipolar junction configuration suitable for circuits demanding up to 100 volts and 5 amperes | Toshiba | 9 458 | Add to BOM |
| FDPF9N50NZ | Reliable N-channel MOSFET for power electronic designs, RoHS complian | Fairchild Semiconductor | 4 120 | Add to BOM |
| 2SJ464 | Ideal for general-purpose power control and switching | Toshiba | 4 210 | Add to BOM |
| R6006ANX | With RoHS compliance and a 2014 release, product R6006ANX is primed for immediate shipment | Rohm Semiconductor | 2 714 | Add to BOM |
| STF8N60DM2 | N-Channel 600 V 8A (Tc) 25W (Tc) Through Hole TO-220FPAB | STMicroelectronics | 9 458 | Add to BOM |
| IPA60R400CEXKSA1 | Trans MOSFET N-CH 600V 14.7A 3-Pin(3+Tab) TO-220FP Tube | Infineon | 9 458 | Add to BOM |
| IPA60R099C7 | MOSFET HIGH POWER_NEW | Infineon Technologies Corporation | 2 820 | Add to BOM |
| TK8A55DA(STA4,Q,M) | N-Channel 550 V 7.5A (Ta) 40W (Tc) Through Hole TO-220SIS | Toshiba | 9 458 | Add to BOM |
| 2SK3767(Q) | MOSFET N-Ch 600V 2A Rdson 4.5 Ohm | Toshiba | 9 458 | Add to BOM |
| BA25DD0T | Linear Voltage Regulator IC Positive Fixed 1 Output 2A TO-220FP-3 | ROHM Semiconductor | 9 988 | Add to BOM |
| TK14A55D(STA4,Q,M) | N-Channel 550 V 14A (Ta) 50W (Tc) Through Hole TO-220SIS | Toshiba | 9 458 | Add to BOM |
| IPA65R420CFDXKSA2 | 600V Power Transistor | Infineon | 9 458 | Add to BOM |
| 2SC3709A-Y(F) | Bipolar Transistors - BJT NPN 50V 12A Transistor | Toshiba | 9 458 | Add to BOM |
| 2SA1930(Q,M) | Bipolar (BJT) Transistor PNP 180 V 2 A 200MHz 2 W Through Hole TO-220NIS | Toshiba | 9 458 | Add to BOM |
| IKA08N65F5XKSA1 | Trans IGBT Chip N-CH 650V 10.8A 31.2W 3-Pin(3+Tab) TO-220FP Tube | Infineon | 9 458 | Add to BOM |
| SIHA6N80AE-GE3 | MOSFET N-CHANNEL 800V TO-220FP | Vishay | 9 458 | Add to BOM |
| SIHA22N60EL-GE3 | N-Channel 600 V 21A (Tc) 35W (Tc) Through Hole TO-220 Full Pack | Vishay | 9 458 | Add to BOM |
| SIHA186N60EF-GE3 | N-Channel 600 V 8.4A (Tc) 156W (Tc) Through Hole TO-220 Full Pack | Vishay | 9 458 | Add to BOM |
| SIHF5N50D-E3 | N-Channel 500 V 5.3A (Tc) 30W (Tc) Through Hole TO-220 Full Pack | Vishay | 9 458 | Add to BOM |
| SIHF15N60E-E3 | N-Channel 600 V 15A (Tc) 34W (Tc) Through Hole TO-220 Full Pack | Vishay | 9 458 | Add to BOM |
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