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TO-3PN
(39 pièces au total)| Numéro de pièce fabricant | Description | Fabricant | En stock | Opération |
|---|---|---|---|---|
| FDA8440 | N-Channel 40 V 30A (Ta), 100A (Tc) 306W (Tc) Through Hole TO-3PN | NXP Semiconductor | 2 312 | Add to BOM |
| FGA60N65SMD | IGBT, 650V, 60A, Field Stop | Onsemi | 9 458 | Add to BOM |
| FDA75N28 | Transistor MOSFET N-channel with 280V voltage rating and 75A current rating in a TO-3P package | onsemi | 5 141 | Add to BOM |
| 2SK1529-Y | N-channel silicon power MOSFET with a voltage rating of 180V and a current rating of 10A in a TO-3PN package | TOSHIBA | 6 276 | Add to BOM |
| FGA60N60UFDTU | IGBT Field Stop 600 V 120 A 298 W Through Hole TO-3PN | onsemi | 9 458 | Add to BOM |
| FGA50S110P | IGBT Transistors 1100 V, 50 A Shorted-anode IGBT | onsemi | 9 458 | Add to BOM |
| FGA6560WDF | IGBT Trench Field Stop 650 V 120 A 306 W Through Hole TO-3PN | onsemi | 9 458 | Add to BOM |
| FGA6540WDF | IGBT Trench Field Stop 650 V 80 A 238 W Through Hole TO-3PN | onsemi | 9 458 | Add to BOM |
| FGA40N65SMD | Product FGA40N65SMD information: Trans IGBT Chip N-CH 650V 80A 349mW 3-Pin(3+Tab) TO-3P Tube | Onsemi | 9 458 | Add to BOM |
| IRFP150A | High-performance IRFP150A MOSFET: Offers a voltage rating of 100V, ensuring efficient power management in various electronic circuits | ROCHESTER ELECTRONICS LLC | 8 045 | Add to BOM |
| 2SK2150 | POWER MOSFET 0.4 OHM | Toshiba | 8 317 | Add to BOM |
| 20DL2C41A | 20DL2C41A Diode Switching 200V 20A 35ns | Toshiba | 5 868 | Add to BOM |
| 30GWJ2C42C | 30A Schottky diode capable of handling voltages up to 40V, enclosed in a TO-3PN package with 3 pins and a tab | Toshiba | 9 458 | Add to BOM |
| 2SK4108(F) | Silicon N-Channel MOSFET Transistor 500V 20A 3-Pin(3+Tab) TO-3PN | Toshiba | 5 341 | Add to BOM |
| 2SK2837(Q) | The 2SK2837(Q) is a power MOSFET with N-channel polarity, suitable for high-power applications | Toshiba | 8 231 | Add to BOM |
| 2SA1941-O(Q) | This device is a PNP Bipolar Junction Transistor (BJT) suitable for applications demanding a maximum voltage rating of -140V | toshiba | 9 438 | Add to BOM |
| FGA50T65SHD | IGBT Trench Field Stop 650 V 100 A 319 W Through Hole TO-3PN | onsemi | 9 458 | Add to BOM |
| FGA20S140P | IGBT Trench Field Stop 1400 V 40 A 272 W Through Hole TO-3PN | onsemi | 9 458 | Add to BOM |
| FGH30S130P | IGBT Trench Field Stop 1300 V 60 A 500 W Through Hole TO-247-3 | onsemi | 9 458 | Add to BOM |
| FGA30S120P | IGBT Trench Field Stop 1300 V 60 A 348 W Through Hole TO-3PN | onsemi | 9 458 | Add to BOM |
| 2SA1232 | Versatile PNP solution for amplifier and driver circuits | Renesas | 3 335 | Add to BOM |
| 2SC3679 | - Power Bipolar Transistor, NPN, Silicon, Plastic/Epoxy | Sptech | 5 917 | Add to BOM |
| FGA30T65SHD | IGBT, 650 V, 30 A Field Stop Trench | Onsemi | 5 159 | Add to BOM |
| FFA60UP20DNTU | Diode Array 1 Pair Common Cathode 200 V 30A Through Hole TO-3P-3, SC-65-3 | onsemi | 6 165 | Add to BOM |
| 2SK1358 | High-power MOSFET transistor for demanding application | Toshiba | 4 620 | Add to BOM |
| 2SD1559 | High-power transistor for amplification and switching applications | Sptech | 2 756 | Add to BOM |
| 2SC5242-O | Rugged TO-N package with excellent thermal performance and reliability | Toshiba | 6 614 | Add to BOM |
| 2SC5198-O(Q) | Versatile NPN BJT for use in a wide range of applications including amplifiers, motor drives, and power supplies, operating up to and | Toshiba | 6 783 | Add to BOM |
| 2SC2625 | A high-gain NPN transistor designed for general-purpose application | Sptech | 5 019 | Add to BOM |
| 2SK3878(F) | Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN | Toshiba | 2 969 | Add to BOM |
| TK70J20D,S1Q | MOSFET N-Ch 200V 70A 410W MOSVII 160nC .0029 | Toshiba | 5 879 | Add to BOM |
| FQA27N25 | N-Channel 250 V 27A (Tc) 210W (Tc) Through Hole TO-3PN | onsemi | 7 661 | Add to BOM |
| FQA90N15-F109 | N-Channel 150 V 90A (Tc) 375W (Tc) Through Hole TO-3PN | onsemi | 8 295 | Add to BOM |
| FQA9N90-F109 | MOSFET 900V N-Channel QFET | onsemi | 9 699 | Add to BOM |
| FQA16N50-F109 | Trans MOSFET N-CH 500V 16A | onsemi | 8 621 | Add to BOM |
| FDA16N50-F109 | N-Channel 500 V 16.5A (Tc) 205W (Tc) Through Hole TO-3PN | onsemi | 7 255 | Add to BOM |
| FGA40T65UQDF | IGBT NPT 650 V 80 A 231 W Through Hole TO-3PN | onsemi | 7 280 | Add to BOM |
| FGA40T65SHDF | IGBT Trench Field Stop 650 V 80 A 268 W Through Hole TO-3PN | onsemi | 8 824 | Add to BOM |
| FGA3060ADF | IGBT Trench Field Stop 600 V 60 A 176 W Through Hole TO-3PN | onsemi | 6 719 | Add to BOM |
Autre forfait