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TO-3PN-3
(96 pièces au total)| Numéro de pièce fabricant | Description | Fabricant | En stock | Opération |
|---|---|---|---|---|
| 2SK2967 | Lead-free component for eco-friendly electronic syste | Toshiba | 9 458 | Add to BOM |
| GT50N322A | Pb-F IGBT/Transistor ideal for automotive and industrial use cases | Toshiba | 9 458 | Add to BOM |
| GT40QR21 | Magazine-style N-channel IGBT chip capable of handling 230W power | toshiba | 7 010 | Add to BOM |
| GT30J341 | N-Channel Insulated Gate Bipolar Transistor Chip | toshiba | 8 085 | Add to BOM |
| GT10Q101 | Advanced power management component with high voltage toleranc | toshiba | 7 481 | Add to BOM |
| GT10J301 | GT10J301 IGBT Transistors - Discontinued (07-10), Phase-Out (10-01), Obsolete (10-04) | toshiba | 5 852 | Add to BOM |
| FGA180N33ATDTU | N-channel IGBT chip with 330V voltage rating | onsemi | 5 774 | Add to BOM |
| FQA10N80 | Introducing FQA10N80: A QFET MOSFET with 800V capability | onsemi | 5 654 | Add to BOM |
| FQA160N08 | N-Channel 80 V 160A (Tc) 375W (Tc) Through Hole TO-3PN | onsemi | 9 458 | Add to BOM |
| FQA46N15 | N-Channel 150 V 50A (Tc) 250W (Tc) Through Hole TO-3P | onsemi | 9 458 | Add to BOM |
| GT30J324 | Transistor GT30J324 is a 30A, 600V N-channel IGBT with a 2-16C1C configuration and 3 pins | Toshiba | 9 458 | Add to BOM |
| GT30J301 | 3-pin IGBT transistor | Toshiba | 5 410 | Add to BOM |
| IRFP450B | N-Channel B-FET MOSFET 500V | Onsemi | 7 180 | Add to BOM |
| FQA13N80 | MOSFET TO-3P N-channel 600V | Onsemi | 6 906 | Add to BOM |
| FQA12P20 | FQA12P20: MOSFET designed for power applications, with a P-channel configuration, capable of handling up to 200 volts and 12 | Onsemi | 9 458 | Add to BOM |
| FQA47P06 | Can be mounted on a rail for convenient installation | Onsemi | 8 859 | Add to BOM |
| FCA20N60S | MOSFET 650V, SUPER FET | Onsemi | 9 993 | Add to BOM |
| FCA22N60N | N-Channel 600 V 22A (Tc) 205W (Tc) Through Hole TO-3PN | onsemi | 9 458 | Add to BOM |
| FCA36N60NF | N-Channel 600 V 34.9A (Tc) 312W (Tc) Through Hole TO-3PN | onsemi | 9 458 | Add to BOM |
| FCA16N60N | N-Channel 600 V 16A (Tc) 134.4W (Tc) Through Hole TO-3PN | onsemi | 9 458 | Add to BOM |
| FCA35N60 | Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 35 A, 98 mΩ, TO-3P | onsemi | 9 458 | Add to BOM |
| 2SK3176 | TRANSISTOR 30 A, 200 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-16C1B, SC-65, 3 PIN, FET General Purpose Power | Toshiba | 9 458 | Add to BOM |
| 2SK3314 | MOSFET TO3PN PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-01)/OBSOLETE(10-04), | Toshiba | 9 458 | Add to BOM |
| 2SK2606 | TRANSISTOR 8 A, 800 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-16F1B, 3 PIN, FET General Purpose Power | Toshiba | 9 458 | Add to BOM |
| FDA70N20 | N-Channel 200 V 70A (Tc) 417W (Tc) Through Hole TO-3PN | onsemi | 9 458 | Add to BOM |
| FQA13N50CF | N-Channel 500 V 15A (Tc) 218W (Tc) Through Hole TO-3PN | onsemi | 9 458 | Add to BOM |
| 2SK2749 | TRANSISTOR 7 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-16C1B, 3 PIN, FET General Purpose Power | Toshiba | 9 458 | Add to BOM |
| 2SK2746 | TRANSISTOR 7 A, 800 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power | TOSHIBA CORP | 7 819 | Add to BOM |
| 2SK2719 | TRANSISTOR 3 A, 900 V, 4.3 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-16C1B, SC-65, 3 PIN, FET General Purpose Power | Toshiba | 9 458 | Add to BOM |
| TK50J60U | MOSFET Super Junction Power Mosfet | Toshiba | 8 170 | Add to BOM |
| TK40J60U | MOSFET Super Junction Power Mosfet | Toshiba | 9 365 | Add to BOM |
| TK12J60U | MOSFET Super Junction Power Mosfet | Toshiba | 5 250 | Add to BOM |
| SFH154 | N-Channel 150 V 34A (Tc) 204W (Tc) Through Hole TO-3P | ONSEMI | 5 734 | Add to BOM |
| SFH9240 | P-Channel 200 V 11A (Tc) 126W (Tc) Through Hole TO-3P | onsemi | 9 458 | Add to BOM |
| 2SK2607 | 800V N-channel MOSFET with a current rating of 9A, model 2SK2607 | Toshiba | 2 087 | Add to BOM |
| FGA30N65SMD | IGBT, 650V, 30A, Field Stop | Onsemi | 9 458 | Add to BOM |
| 2SK2611 | N-channel power MOSFET suitable for DC-DC converters and motor control circuits | Toshiba | 1 355 | Add to BOM |
| 2SK2837 | High-efficiency power device with exceptional voltage tolerance and current handlin | Toshiba | 4 473 | Add to BOM |
| 2SK2847 | Powerful electronic component ideal for driving motors, LED lights, and other heavy loads, ensuring smooth and controlled operation | Toshiba | 6 678 | Add to BOM |
| 2SK2610 | Compact TO-3PN package provides excellent thermal dissipation | Toshiba | 5 803 | Add to BOM |
| 2SK2699 | High-power N-channel MOSFET for demanding application | Toshiba | 7 398 | Add to BOM |
| 2SK2698 | High-power MOSFET for demanding applications requiring high current and voltage capabilities | Toshiba | 6 497 | Add to BOM |
| 2SK2173 | High-performance power transistor for demanding application | Toshiba | 5 777 | Add to BOM |
| 2SK3700(F) | N-channel Silicon Transistor MOSFET 900V 5A 3-Pin(3+Tab) TO-3PN | Toshiba | 9 458 | Add to BOM |
| GT40Q323(Q) | IGBT Transistors IGBT 1200V 39A | TOSHIBA | 6 568 | Add to BOM |
| FQA13N80-F109 | N-Channel 800 V 12.6A (Tc) 300W (Tc) Through Hole TO-3PN | onsemi | 9 458 | Add to BOM |
Autre forfait