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TSOP-I
(45 pièces au total)| Numéro de pièce fabricant | Description | Fabricant | En stock | Opération |
|---|---|---|---|---|
| K9F1G08U0C-PCB0 | 3.3 Voltage Operation | Samsung Electronics | 9 318 | Add to BOM |
| MT29F1G08ABADAWP-IT:D | With its SLC technology, this bit memory chip provides fast write speeds and low latency for efficient data acces | Micron Technology | 6 751 | Add to BOM |
| MT29F2G08ABAEAWP-IT:E | Advanced storage technology offering high-speed access and reliabilit | Micron Technology | 8 613 | Add to BOM |
| MT29F2G08ABAEAWP:E | Bulk Memory IC MT29F2G08ABAEAWP | Micron | 7 105 | Add to BOM |
| W29N01GVSIAA | Brand: Winbond Electronics Corporation | Winbond | 9 994 | Add to BOM |
| MX29LV160DBTI-70G | Flash memory chip in PDSO48 package with 70ns access time and 1 megabit x 16 configuration | Macronix International | 5 032 | Add to BOM |
| MX29GL512FLT2I-10Q | 56-pin TSOP-I packaged NOR Flash memory with 512M-bit capacity and a parallel data interface | Macronix International | 7 866 | Add to BOM |
| MX29GL320EBTI-70G | 48-Pin TSOP Package with 4M x 8 bit and 2M x 16 bit configurations | Macronix International | 9 819 | Add to BOM |
| MX29GL128FLT2I-90G | NOR flash memory chip | Macronix International | 5 509 | Add to BOM |
| MT29F8G08ABABAWP:B | High-density bit NAND Flash memory for robust data storage and processing capabilitie | Micron Technology | 5 487 | Add to BOM |
| MT29F4G16ABADAWP-IT:D | Low-voltage operation at 3.3V | Micron Technology | 7 573 | Add to BOM |
| MX29GL256FDT2I-11G | 256 Megabit Parallel Flash Integrated Circuit in 56-Pin TSOP | Macronix International | 8 944 | Add to BOM |
| MX29LV640EBTI-70G | NOR Flash 64M-bit 3V/3.3V Parallel Memory | Macronix | 8 442 | Add to BOM |
| MX29F400CBTI-70G | Memory Storage and Data Transfer Made Easy with MXFBTI- | Macronix International | 6 035 | Add to BOM |
| MX30LF4G28AD-TI | 3V/3.3V operation for compatibility with various systems | Macronix International | 7 575 | Add to BOM |
| RMLV1616AGSA-5S2#AA0 | 3V SRAM Module with 16MB Capacity | Renesas | 2 086 | Add to BOM |
| K9F2G08U0C-SIB0000 | Reliable and efficient SLC NAND Flash component featuring ns read access time and operating voltage | Samsung Electronics | 9 137 | Add to BOM |
| MT29F2G08ABAEAWP-IT | 2 gigabit capacity | Micron Technology | 9 946 | Add to BOM |
| TC58TEG5DCJTA00 | Flash memory device with 4 gigabit capacity and 8-bit organization, packaged in a PDSO48 form factor | KIOXIA | 9 484 | Add to BOM |
| MT29F2G08AACWP:C | Parallel interface with a capacity of 256M x 8 bits | Micron Technology | 9 163 | Add to BOM |
| MT29F16G08FAAWC:A | Operating voltage of 3.3V for efficient power consumption | Micron Technology | 8 465 | Add to BOM |
| IS61WV102416BLL-10TI | Low-power, low-voltage memory solution for efficient system design | Integrated Silicon Solution Inc | 9 142 | Add to BOM |
| K9F2G08U0C-SIB000 | Ultra-reliable x bit configuration ensures secure data preservation | Samsung Electronics | 7 585 | Add to BOM |
| MD2811-D32-V3 | Flash Memory Drive, CMOS, PDSO48, 20 X 12 MM, 1.30 MM HEIGHT, TSOP1-48 | Western Digital | 5 761 | Add to BOM |
| MT29F2G08ABAFAWP:F | Micron Technology | 7 283 | Add to BOM | |
| MX29LV320DBTI-70G | Lead-free and RoHS compliant | Macronix International | 2 294 | Add to BOM |
| H27U1G8F2BTR-BC | A versatile component for various electronic devices | Sk Hynix Inc | 3 080 | Add to BOM |
| MT29F32G08CBADBWPR:D | High-speed RAM chip | Micron Technology | 5 660 | Add to BOM |
| H27U1G8F2BTRBC | A versatile component for various electronic devices | Sk Hynix Inc | 7 206 | Add to BOM |
| MT29F2G08ABAEAWP | Robust and reliable non-volatile memory for industrial us | Micron | 6 805 | Add to BOM |
| MT28F800B5WG-8B | Ultra-fast data access for real-time processin | Micron Technology | 5 063 | Add to BOM |
| AT28C64B-15TU | Advanced high-density storage solution for modern applications | Microchip Technology | 7 195 | Add to BOM |
| TC58NVG2S3ETA00BBH | Industrial-grade parallel interface NAND flash with robust performance | Toshiba | 4 418 | Add to BOM |
| K9K8G08U0B-PCB0000 | High-capacity storage for demanding applications: 1G x 8/2G x 8 Bit NAND Flash Memory | Samsung Electronics | 7 088 | Add to BOM |
| K6X1008T2D-PF70T00 | The KT-PFT is a premium SRAM solution for demanding applications requiring rapid access to large amounts of memory | Samsung Electronics | 6 277 | Add to BOM |
| K6X1008C2D-PF55T00 | Scalable architecture allows for easy integration into a wide range of systems and application | Samsung Electronics | 3 228 | Add to BOM |
| K6X1008C2D-PF55000 | Compact and fast asynchronous SRAM chip for demanding systems (66 characters) | Samsung Electronics | 4 454 | Add to BOM |
| K9WAG08U1D-SCB0000 | High-capacity flash memory for data storage and retrieva | Samsung Electronics | 6 908 | Add to BOM |
| K9F5608U0D-PCB0T00 | Compact 48-pin TSOP-I package design for space-saving applications | Samsung Electronics | 5 377 | Add to BOM |
| MT29F8G08ABACAWP:C TR | FLASH - NAND Memory IC 8Gbit Parallel 48-TSOP I | Micron Technology | 3 735 | Add to BOM |
| MT29F8G08ABABAWP:B TR | FLASH - NAND Memory IC 8Gbit Parallel 48-TSOP I | Micron Technology | 4 756 | Add to BOM |
| K6T1008C2E-TB55000 | SRAM Chip Async Single 5V 1M-bit 128K x 8 55ns 32-Pin TSOP-I Tray | Samsung Electronics | 2 913 | Add to BOM |
| K6T1008C2E-TF70T00 | SRAM Chip Async Single 5V 1M-bit 128K x 8 70ns 32-Pin TSOP-I T/R | Samsung Electronics | 4 686 | Add to BOM |
| K9F5608U0D-PIB0T000 | SLC NAND Flash Parallel 3.3V 256M-bit 32M x 8 15us 48-Pin TSOP-I T/R | Samsung Electronics | 5 937 | Add to BOM |
| K9F2808U0C-YCB000 | SLC NAND Flash Parallel 3.3V 128M-bit 16M x 8 48-Pin TSOP-I Tray | Samsung Electronics | 2 218 | Add to BOM |
Autre forfait