MICROSEMI 2N2326S

Points de pièce

• The 2N2326S is a semiconductor chip that belongs to the NPN transistor family. It is commonly used in electronic circuits for amplification purposes. The chip has a maximum power dissipation of 350mW and a collector current rating of 1A. It is designed to be employed in low-power applications and works effectively in various electronic devices.

• Equivalent

  There are no direct equivalent products for the 2N2326S chip, as it is a unique part number belonging to Motorola. However, you may consider looking for alternative high-power NPN transistors that meet your specific requirements in terms of voltage, current, and other specifications.

• Features

  The 2N2326S is a transistor with the following features: PNP bipolar junction, high power dissipation, high current gain, low collector-emitter saturation voltage, and is suitable for general-purpose amplification and switching applications.

• Pinout

  The 2N2326S is a silicon PNP transistor. It is a three-terminal device with a pin count of 3. The emitter is connected to the metal can package, the collector is connected to the base plate, and the base is the only pin accessible from outside.

• Manufacturer

  The manufacturer of the 2N2326S is ON Semiconductor. ON Semiconductor is a multinational semiconductor manufacturing company that offers a wide range of power and signal management, logic, discrete, and custom devices for various industries including automotive, communications, consumer, and industrial sectors.

• Application Field

  The 2N2326S is a high-power, high-frequency NPN transistor commonly used in RF and microwave applications. Its main application areas include amplification in RF power amplifiers, oscillators, and transmitters, as well as in television and radio broadcasting equipment, radar systems, and satellite communication systems.

• Package

  The 2N2326S chip is a transistor available in a TO-18 package type. It has a small form factor and compact size.