IXRFD630

Points de pièce

• The IXRFD630 is a high-speed, high-power RF MOSFET driver designed for applications up to 4 GHz. It features a peak output current of 1.5 A and a wide voltage range of 10-30 V. The chip is suitable for RF power amplifiers, radar systems, and other high-frequency applications that require high-speed switching capabilities.

• Equivalent

  Some equivalent products of the IXRFD630 chip include the IRF6839 and IRF5303 chips from Infineon Technologies, as well as the M584 chip from Microchip Technology. These chips are also high-speed gate drivers designed for high power applications.

• Features

  IXRFD630 is a high-speed power MOSFET driver with independent high- and low-side referenced output channels. It features 28ns propagation delay, matched propagation delays, low side output in phase with input, 5ns rise and fall times, and 3.5A peak source and sink current. It operates over a wide voltage range and is suitable for high frequency switching applications.

• Pinout

  The IXRFD630 is a high-speed, high power MOSFET driver with 8-pin configuration. It provides high peak output currents of up to 6A and can drive MOSFETs and IGBTs up to 600V. The pins include VCC, GND, SD, IN, LO, OUTH, OUTL, and CT.

• Manufacturer

  IXRFD630 is manufactured by IXYS RF, a company specializing in RF power amplifiers and RF switches for the satellite, military, and industrial markets. IXYS RF is a division of IXYS Corporation, a global semiconductor company that develops power semiconductors, advanced material technologies, and integrated circuits.

• Application Field

  IXRFD630 is commonly used in applications such as RF energy generators, MRI machines, plasma generators, and RF heating systems. These systems require high-speed switching of RF power to efficiently control and generate radio frequency signals for various industrial and medical applications.

• Package

  The IXRFD630 chip comes in a surface mount package type, Half-Bridge form, and has dimensions of 16.5mm x 11.25mm x 3.2mm.