NSR0320MW2T1

Points de pièce

• The NSR0320MW2T1 chip is a high-power, high-efficiency RF GaN-on-SiC transistor designed for aerospace and defense applications. It operates in the 3.1-3.6 GHz frequency range and offers exceptional performance and reliability in harsh environments. With a compact size and high power output, this chip is ideal for radar, electronic warfare, and communications systems.

• Equivalent

  The equivalent products of NSR0320MW2T1 chip are NSR0320MW2T1G and NSR0320MW2T1G. These are next-generation low Ron, no dead time, ultra-fast diode chips designed for high-speed switch-mode applications. They have similar features and specifications as the original NSR0320MW2T1 chip.

• Features

  NSR0320MW2T1 is a high-power silicon-based rectifier diode with a forward current of 30A, a reverse voltage of 200V, and a low forward voltage drop. It is designed for use in high-power rectifying and regulating circuits.

• Pinout

  NSR0320MW2T1 is a Schottky Barrier Diode with a pin count of 2. The function of this diode is to allow current to flow in one direction while blocking it in the opposite direction. It is commonly used for voltage rectification and signal demodulation in electronic circuits.

• Manufacturer

  NSR0320MW2T1 is manufactured by ON Semiconductor Corporation, which is a global supplier of semiconductor-based solutions. ON Semiconductor designs, manufactures, and markets a wide range of products including power and signal management, discrete, logic, and custom devices for automotive, communications, computing, consumer, industrial, and medical markets.

• Application Field

  NSR0320MW2T1 can be used in various applications including cellular base stations, repeaters, small cells, and distributed antenna systems. It is suitable for 5G and LTE networks, providing high efficiency and low noise figure performance in an ultra-compact package.

• Package

  The NSR0320MW2T1 chip is a Surface Mount Package with a form of WSON-6 and a size of 2mm x 2mm x 0.6mm.