Ce site web utilise des cookies. En utilisant ce site, vous consentez à l'utilisation de cookies. Pour plus d'informations, veuillez consulter notre politique de confidentialité.
TO-225-3
(34 pièces au total)| Numéro de pièce fabricant | Description | Fabricant | En stock | Opération |
|---|---|---|---|---|
| MJE350G | This transistor has a power dissipation of 20000mW, making it suitable for high-power applications | Onsemi | 3 184 | Add to BOM |
| MJE210G | Bipolar (BJT) Transistor PNP 40 V 5 A 65MHz 15 W Through Hole TO-126 | onsemi | 9 458 | Add to BOM |
| MJE253G | PNP type transistors with a power dissipation of 15W | Onsemi | 9 458 | Add to BOM |
| 2N5190G | Bipolar Junction Transistors | Onsemi | 3 343 | Add to BOM |
| MJE180G | The MJE180G boasts a 3.0A capacity and operates as an NPN Bipolar Power Transistor | Onsemi | 9 458 | Add to BOM |
| MJE802G | Bipolar (BJT) Transistor NPN - Darlington 80 V 4 A 40 W Through Hole TO-126 | onsemi | 5 611 | Add to BOM |
| MJE13003 | Exceptional current gain and low saturation voltage ensure stable amplifier performanc | Onsemi | 5 467 | Add to BOM |
| BD675G | Bipolar (Bjt) Single Transistor, Darlington, Npn, 45 V, 1 Mhz, 40 W, 4 A, 750 Rohs Compliant: Yes | ROCHESTER ELECTRONICS LLC | 9 963 | Add to BOM |
| MCR106-8G | Silicon Controlled Rectifier MCR106-8G with 3 pins and CASE 077-09 | Littelfuse | 6 955 | Add to BOM |
| C106M1G | SCR 600 V 4 A Sensitive Gate Through Hole TO-225AA | LITTELFUSE INC | 9 805 | Add to BOM |
| 2N5195G | Bipolar (BJT) Transistor PNP 80 V 4 A 2MHz 40 W Through Hole TO-126 | ONSEMI | 8 444 | Add to BOM |
| 2N5192G | NPN Bipolar Junction Transistor with 80V Voltage Rating | onsemi | 9 458 | Add to BOM |
| MJE243G | MJE243G: NPN General Purpose Transistor, 100V, 4A, 1500mW, 3-Pin TO-225 Package | Onsemi | 5 419 | Add to BOM |
| MJE172G | Bipolar (BJT) Transistor PNP 80 V 3 A 50MHz 1.5 W Through Hole TO-126 | onsemi | 9 458 | Add to BOM |
| MJE182G | Bipolar (BJT) Transistor NPN 80 V 3 A 50MHz 1.5 W Through Hole TO-126 | onsemi | 9 458 | Add to BOM |
| C106D | Sensitive gate design for precise triggering contro | Onsemi | 9 458 | Add to BOM |
| BD787G | 4.0 A, 60 V NPN Bipolar Power Transistor | Onsemi | 9 458 | Add to BOM |
| BD179G | Bipolar Transistors - BJT 3A 80V 30W NPN | onsemi | 9 458 | Add to BOM |
| BD437G | Bipolar (BJT) Transistor NPN 45 V 4 A 3MHz 36 W Through Hole TO-126 | ONSEMI | 9 552 | Add to BOM |
| BD435G | Bipolar Transistors - BJT | ONSEMI | 9 170 | Add to BOM |
| BD159G | Bipolar (BJT) Transistor NPN 350 V 500 mA 20 W Through Hole TO-126 | ROCHESTER ELECTRONICS LLC | 6 700 | Add to BOM |
| C106M | SCR 600 V 4 A Standard Recovery Through Hole TO-202 | onsemi | 9 458 | Add to BOM |
| BD681G | Bipolar (BJT) Transistor NPN - Darlington 100 V 4 A 40 W Through Hole TO-126 | ONSEMI | 7 044 | Add to BOM |
| MJE700 | MJE700 transistors are reliable components for amplifiers, motor controls, and other high-power circuitry | Onsemi | 5 365 | Add to BOM |
| MJE344G | Bipolar transistors - BJT 0.5A 200V 20W NPN | Onsemi | 8 150 | Add to BOM |
| BD788G | High-power transistor for demanding applications | Onsemi | 5 348 | Add to BOM |
| 2N5194 | The 2N5194 transistor is compliant with the ROHS directive | Onsemi | 6 140 | Add to BOM |
| 2N6034 | High-power device for amplifying signals and switching application | Onsemi | 3 229 | Add to BOM |
| 2N5190 | Robust package designed for high-reliability operatio | Onsemi | 7 191 | Add to BOM |
| MJE340G | Featuring NPN configuration | Onsemi | 2 901 | Add to BOM |
| 2N4918 | Suitable for a variety of uses, the 2N4918 transistor is perfect for driver circuits and switching functions | Onsemi | 5 571 | Add to BOM |
| 2N6075B | 600V 4A Triode-controlled Silicon Thyristor | Onsemi | 4 418 | Add to BOM |
| 2N6073A | Triac with 400V V(drm) and 4A I(t)rms in To-126 package | Onsemi | 5 403 | Add to BOM |
| 2N4923 | Bipolar (BJT) Transistor NPN 80 V 1 A 3MHz 30 W Through Hole TO-126 | Onsemi | 6 762 | Add to BOM |
Autre forfait