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TO247
(25 pièces au total)| Numéro de pièce fabricant | Description | Fabricant | En stock | Opération |
|---|---|---|---|---|
| IRFP260MPBF | Ideal for high-current, high-voltage power conversion in industrial settings | Infineon Technologies | 4 340 | Add to BOM |
| MJW21196G | TO-247 package with 3 pins | ON | 3 551 | Add to BOM |
| MJW21195G | BJT PNP 250V 16A 200W TO-247 Tube | ON | 20 | Add to BOM |
| IRFP4227PBF | TO-247AC-3 package type | Infineon | 3 738 | Add to BOM |
| IRFP250NPBF | N-channel Silicon | Infineon | 3 081 | Add to BOM |
| IRFP2907PBF | TO-247AC packaged N-CHANNEL silicon POWER MOSFET designed for applications requiring up to 90 A of current and with a voltage rating of 75 V | Infineon | 9 430 | Add to BOM |
| IRFP1405PBF | 55V N Channel MOSFET with a max current rating of 95A and power dissipation of 310W at 25°C | Infineon | 2 198 | Add to BOM |
| IRFP064NPBF | This product is a MOSFET with a 55V voltage threshold, capable of carrying currents up to 98A | Infineon | 9 458 | Add to BOM |
| IRFP4668PBF | Robust and fast-switching IRFPPBF for high-speed motor contro | Infineon | 5 267 | Add to BOM |
| IRFP4332PBF | N-Channel 250V 57A Power MOSFET in TO-247AC Package | Infineon | 3 430 | Add to BOM |
| STW6N95K5 | N-Channel 950 V 9A (Tc) 90W (Tc) Through Hole TO-247-3 | ST | 1 200 | Add to BOM |
| IRFP4110PBF | Power Field-Effect Transistor with N-Channel and Silicon Technology | Infineon | 7 095 | Add to BOM |
| IRFP4368PBF | High-performance IRFP4368PBF Power Mosfet for efficient power management applications | Infineon | 6 733 | Add to BOM |
| IRFP260NPBF | Efficient N-Channel Mosfet suitable for various power applications | Infineon | 5 006 | Add to BOM |
| IPW60R024P7 | IPW60R024P7 TO-247-3 package 24mΩ@10V | Infineon | 8 694 | Add to BOM |
| IPW60R045P7 | Next-generation MOSFET for high power applications | Infineon | 7 044 | Add to BOM |
| IMW65R072M1H | IMW65R072M1H: Power Field-Effect Transistor Description | Infineon | 7 117 | Add to BOM |
| IMW120R090M1H | High-performance IGBT module for demanding power applications | Infineon | 8 660 | Add to BOM |
| IMW65R107M1H | IMW65R107M1H Power FET Product Details | Infineon | 5 145 | Add to BOM |
| IMW120R140M1H | Field-Effect Transistor for Power Applications: IMW120R140M1H | Infineon | 9 091 | Add to BOM |
| IKQ100N60T | IGBT Transistors INDUSTRY 14 | Infineon | 5 193 | Add to BOM |
| IRFP250MPBF | Tube packaging of N-channel Silicon Power MOSFET with 200V 30A rating | Infineon | 8 395 | Add to BOM |
| RGTH00TS65D | IGBT Transistors | ROHM Semiconductor | 5 845 | Add to BOM |
| AIKW50N65RF5 | Best cost-performance is the most important aspect for auxiliary applications in electric vehicles and hybrid vehicles. Therefore, Infineon has developed a hybrid of 650V TRENCHSTOP™ 5 AUTO fast-switching IGBT and CoolSiC™ Schottky Diode to enable a cost-efficient performance boost for fast switching automotive applications such as On-Board Charger, PFC, DC-DC and DC-AC.The combination of a best-in-class fast-switching IGBT with a very reliable SiC Diode builds a perfect cost-performance trade-off for hard-switching topologies. Due to the Qrr-free unipolar CoolSiC™ Schottky Diode, the Eon of the IGBT will be reduced significantly over silicon-only solutions. This makes the hybrid the first-choice for system-cost-sensitive hard commutation applications, such as Totem Pole topology in Automotive On-Board Charger applications. This results in better margin for low-complexity design-in activities. | Infineon Technologies Corporation | 3 613 | Add to BOM |
| IRFP4768PBF | N-Channel Silicon Metal-Oxide Semiconductor FET | Infineon | 3 571 | Add to BOM |
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