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SOT-363-6

(208 pièces au total)
Numéro de pièce fabricant Description Fabricant En stock Opération
2N7002DW-7-F 2N7002DW-7-F Transistor Diodes Incorporated 3 336 Add to BOM
2N7002DWA-7 Small-Signal N-Channel Metal-oxide Semiconductor FET Diodes Incorporated 9 458 Add to BOM
SI1912EDH High Power N-Channel FET vishay 5 818 Add to BOM
PSA-545+ PSA-545+ RF Amplifier Mini-Circuits 9 458 Add to BOM
BCR119S Bipolar Transistors with Pre-Bias Infineon Technologies 6 334 Add to BOM
BCM856S BCM856S, PNPAF65V100mASOT363, Reel infineon 8 065 Add to BOM
BCM846S Described as a Trans GP BJT NPN, BCM846S offers a maximum power dissipation of 250mW, making it suitable for a variety of automotive electronics infineon 5 284 Add to BOM
AG201-63G Signal booster with 6000MHz bandwidth and 11dB gain at 900MHz qorvo 8 264 Add to BOM
MGA-86563-BLKG MGA-86563-BLKG RF amplifier MMIC IC from AVAGO TECHNOLOGIES Broadcom Limited 7 810 Add to BOM
RF6C055BC Product Description: Middle Power MOSFET for PCH with -20V and -5.5A ROHM Semiconductor 8 965 Add to BOM
DMN63D8LDWQ-7 Device for Weak Electrical Signals Diodes Incorporated 9 458 Add to BOM
DMN62D0UDW-7 oxide semiconductor FET, 2-element, 0.35A I(D), 60V Diodes Incorporated 5 048 Add to BOM
BSS138DWQ-7 This SOT-363 Mosfet has a maximum current rating of 0.2A Diodes Incorporated 7 038 Add to BOM
BSD235NH6327XTSA1 N-channel MOSFET with 20V voltage rating and 950mA current capacity in SOT-363-6 package Infineon 9 458 Add to BOM
BSD223PH6327XTSA1 DPAK-2 P-Ch MOSFET Infineon 9 458 Add to BOM
BSS138DW-7-F MOSFET Operating temperature: -55...150 °C Housing type: SOT-363 Polarity: N/N Variants: Enhancement mode Power dissipation: 0.2 W DIODES INC 7 417 Add to BOM
BGA2817,115 RF Amplifier IC General Purpose 0Hz ~ 2.2GHz 6-TSSOP NXP 9 458 Add to BOM
DMN53D0LDW-7 Drain Source Voltage Vds:50V; Continuous Drain Current Id:360Ma; Product Range:-; Qualification:-; Msl:- Rohs Compliant: No |Diodes Inc. DMN53D0LDW-7. DIODES INC 5 249 Add to BOM
DMG6301UDW-7 Transistor MOSFET Array Dual N-CH 25V 0.24A 6-Pin SOT-363 T/R DIODES INC 7 590 Add to BOM
DMN63D8LDW-7 DMN63D8LDW-7 is a package containing two N-Channel MOSFETs with a continuous drain current rating of 220mA at 30V and a power dissipation of 300mW Diodes Incorporated 9 111 Add to BOM
UM6K33NTN Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, UMT6, SC-88, 6 PIN ROHM Semiconductor 5 402 Add to BOM
US6M2TR Mosfet Array 30V, 20V 1.5A, 1A 1W Surface Mount TUMT6 ROHM Semiconductor 5 623 Add to BOM
SI1902DL-T1-E3 Dual N-Channel 20 V 0.385 Ohms Surface Mount Power Mosfet - SOT-363 VISHAY INTERTECHNOLOGY INC 6 258 Add to BOM
SI1563DH-T1-E3 MOSFET; Complementary 20V Low-Threshold MOSFET Vishay 7 068 Add to BOM
MGA-82563-TR1G 100MHz - 6000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, LEAD FREE, ULTRA MINIATURE, SC-70, SOT-363, 6 PIN Broadcom Limited 6 479 Add to BOM
DRDNB21D-7 Complex Array For Dual Relay Driver Automotive 6-Pin SOT-363 T/R Diodes Incorporated 9 458 Add to BOM
DMMT3904W-7-F Trans GP BJT NPN 40V 0.2A 6Pin SOT363 | Diodes Inc DMMT3904W-7-F DIODES INC 6 987 Add to BOM
DMN601DWK-7 ROHS compliant 500mA MOSFET operating at 2.5V@1mA Diodes Incorporated 9 458 Add to BOM
DMC2004DWK-7 Trans MOSFET N/P-CH 20V 0.54A/0.43A Automotive 6-Pin SOT-363 T/R Diodes Incorporated 9 458 Add to BOM
BSS84DW-7-F BSS84DW Series 50 V 10 Ohm Dual P-Channel Enhancement Mode Transistor SOT-363 DIODES INC 5 358 Add to BOM
BAS21TW-7 This diode has a voltage rating of 250 V and power dissipation of 300 mW, making it suitable for various signal processing tasks Diodes Incorporated 9 458 Add to BOM
BC846PN Bipolar Transistors - BJT INFINEON TECHNOLOGIES AG 5 162 Add to BOM
TQP369184 RF Amplifier DC-6GHz NF 3.9dB Gain 20.6dB 50 Ohm Qorvo 9 458 Add to BOM
SGC4563Z RF Amplifier .05-4GHz SSG 20.5dB NF 1.7dB SiGe Qorvo 9 458 Add to BOM
XS5A1T4157GWH TSSOP-6 Analog Switches/Multiplexers featuring SPDT Configuration and 7.7Ω Resistance, ROHS Compliant Nexperia 2 599 Add to BOM
NXB0101GWH SOT363 package for compact designs Nexperia 6 923 Add to BOM
SGA-4563Z High-performance SiGe RF Amplifier with 20.2dB SSG and 2.4dB NF for frequencies up to 2.5GHz Qorvo 7 082 Add to BOM
SGA-3563Z The SGA3563Z amplifier is a versatile device with a single function, making it ideal for a variety of applications Qorvo 2 775 Add to BOM
SGA-4363Z Low Noise Figure and High Linearity for Reliable Performance Qorvo 3 539 Add to BOM
SQ1464EEH-T1_GE3 Low-loss MOSFET solution for high-frequency designs Vishay 9 458 Add to BOM
SQ1421EDH-T1_GE3 P-Channel transistor for 60V applications Vishay 9 458 Add to BOM
SI1902CDL-T1-BE3 Low-on-state voltage and high-current capabilities for efficient switchi Vishay 9 458 Add to BOM
SI1553CDL-T1-BE3 Mosfet Array 20V 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc) 290mW (Ta), 340mW (Tc) Surface Mount SC-70-6 Vishay 9 458 Add to BOM
SQ1912EH-T1_GE3 Features two N-channel MOSFETs in SC-70-6 package Vishay 9 458 Add to BOM
SI1427EDH-T1-BE3 Reliable P-channel MOSFET for efficient power control Vishay 9 458 Add to BOM
SQ1912AEEH-T1_GE3 MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified Vishay 9 458 Add to BOM
SI1480BDH-T1-GE3 Compact SO-package ideal for space-restricted design Vishay 9 458 Add to BOM
DSS4240Y-7 Robust and reliable three-kilohm SOT-package for precision circuit Diodes Incorporated 9 892 Add to BOM
MCH6001-TL-E RF Transistor 2 NPN (Dual) 8V 150mA 16GHz 600mW Surface Mount 6-MCPH onsemi 9 458 Add to BOM
NVJS4151PT1G P-Channel 20 V 3.2A (Ta) 1.2W (Ta) Surface Mount SC-88/SC70-6/SOT-363 onsemi 9 458 Add to BOM