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SOT-363-6

(208 pièces au total)
Numéro de pièce fabricant Description Fabricant En stock Opération
DMC3400SDW-7 N/P-Channel MOSFET Transistor with 30V Voltage and 0.65A/0.45A Current in 6-Pin SOT-363 Configuration Diodes Incorporated 6 000 Add to BOM
MGA-61563-TR1G Amplifies RF signals with 16.6 dB gain Broadcom Limited 6 111 Add to BOM
DMG1016UDW-7 N-Channel and P-Channel Silicon FET Diodes Incorporated 18 000 Add to BOM
BAS70TW-7-F Ultra-fast switching capability makes it ideal for power supplies Diodes Incorporated 8 731 Add to BOM
BCR183S BCR183S offers pre-biased bipolar transistors for streamlined circuit assembly and operation Infineon 3 333 Add to BOM
SI1869DH-T1-E3 The SI1869DH-T1-E3 is a surface mount load switch with level-shift capability, designed for a voltage rating of 20V and a current rating of 1.2A Vishay 9 458 Add to BOM
NTJD5121NT2G MOSFET NFET SC88D 60V 295mA onsemi 9 458 Add to BOM
SBC847BDW1T1G Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363 onsemi 9 458 Add to BOM
ABA-53563-TR1G High Gain RF Amplifier AVAGO 5 556 Add to BOM
MGA-82563-BLKG Ideal for use in wireless infrastructure equipment, such as base stations and access point Broadcom Limited 9 354 Add to BOM
BCM857BS-7-F This product is a PNP-type Bipolar Junction Transistor suitable for general-purpose electronic applications Diodes Incorporated 9 458 Add to BOM
DMN5L06DWK-7 Mosfet Array 50V 305mA 250mW Surface Mount SOT-363 Diodes Incorporated 9 458 Add to BOM
UM6K1NTN High-power dual N-channel MOSFET array for robust circuitr Rohm Semiconductor 9 331 Add to BOM
SI1988DH-T1-E3 MOSFET Recommended Alternative SI1922EDH-T1-GE3 Vishay 9 458 Add to BOM
AG203-63G Gain of 20dB at 900MHz RF Amplifier for Frequencies up to 6000MHz qorvo 6 244 Add to BOM
UMD5NTR NPN/PNP complementary pair transistor with high voltage and current capabiliti Rohm Semiconductor 5 136 Add to BOM
SGA0363Z Silicon Germanium Technology for Low Noise Figure qorvo 6 667 Add to BOM
SGA3563Z The SGA3563Z amplifier is a versatile device with a single function, making it ideal for a variety of applications Qorvo 9 458 Add to BOM
RF3024TR7 Rapid frequency tuning with low power consumption Murata 9 458 Add to BOM
MGA-62563-TR1G High Gain RF Amplifier with 3V Input Voltage and 22 dB Amplification Broadcom Limited 9 222 Add to BOM
MGA-68563-TR1G Boost your RF signal with this GaAs driver amplifier RFIC" Broadcom Limited 7 788 Add to BOM
AG303-63G Small-sized Op-Amp with ROHS compliance QORVO 6 667 Add to BOM
ABA-54563-BLKG Amplifier for radio frequency signals up to 3.4 GHz with 23 dB amplification Broadcom Limited 9 742 Add to BOM
ABA-31563-TR1G DC - 3.5 GHz RF Amplifier providing 21.5dB of amplification Broadcom Limited 6 536 Add to BOM
74LVC2G14GW,125 Dual inverting Schmitt trigger with 5 V tolerant input Nexperia 7 365 Add to BOM
UMD2NTR NPN and PNP dual digital transistor with built-in bias resistor, in SOT-363 package Rohm Semiconductor 8 082 Add to BOM
UMD12NTR Specifications: Pack includes 1 NPN and 1 PNP transistors, suitable for various digital applications Rohm Semiconductor 5 585 Add to BOM
MGA-62563-BLKG Ultra-low noise PHEMT-based amp for 6-24 GHz applications Broadcom Limited 5 684 Add to BOM
MGA-61563-BLKG Wide Band Low Power Amplifier, 100MHz Min, 6000MHz Max, GAAS Broadcom Limited 7 499 Add to BOM
MCH6660-TL-W 1.8V Drive MOSFET Pair for P-Channel and N-Channel Applications onsemi 9 458 Add to BOM
SI1926DL-T1-E3 High performance N Channel MOSFET Vishay 5 908 Add to BOM
SI1869DH-T1-GE3 Load Switch with Level-Shift Vishay 9 458 Add to BOM
SI1411DH-T1-GE3 P-Channel 150 V (D-S) MOSFET VISHAY INTERTECHNOLOGY INC 8 223 Add to BOM
SI1965DH-T1-GE3 Dual P-Channel 12 V 390 mO 1.7 nC Power Mosfet - SOT-363 Vishay 9 458 Add to BOM
SI1443EDH-T1-GE3 Surface Mount Transistor Vishay 6 805 Add to BOM
SI1902CDL-T1-GE3 TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal Vishay 9 458 Add to BOM
SI1553CDL-T1-GE3 N / P-Channel 20 V 0.39/0.85 O Power Mosfet - SOT-363 (SC-70-6) Vishay 9 458 Add to BOM
SI1539CDL-T1-BE3 Premium quality component for high-reliability electronics project Vishay 9 458 Add to BOM
SI1539CDL-T1-GE3 Specifications: 30 Volts, 0.7 Amps, 0.34 Watts Vishay 5 521 Add to BOM
SI1480DH-T1-GE3 2.6A Drain Current Vishay 9 458 Add to BOM
SI1427EDH-T1-GE3 Advanced power management solution with compact design and high reliability Vishay 9 458 Add to BOM
MUN5314DW1T1G Tape and Reel Packaging: Supplied in tape and reel format, the MUN5314DW1T1G facilitates automated assembly processes for mass production onsemi 9 458 Add to BOM
NLAST4599DFT2G 1 Circuit IC Switch 2:1 25Ohm SC-88/SC70-6/SOT-363 onsemi 9 458 Add to BOM
BC856BDW1T1G Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363 onsemi 9 458 Add to BOM
MUN5235DW1T1G Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363 onsemi 9 458 Add to BOM
MUN5233DW1T1G Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual NPN onsemi 9 458 Add to BOM
MUN5214DW1T1G Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V onsemi 9 458 Add to BOM
MUN5211DW1T1G The MUN5211DW1T1G is a Surface-Mounted Technology (SMT) component onsemi 9 458 Add to BOM
SMUN5111DW1T1G Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 385mW Surface Mount SC-88/SC70-6/SOT-363 onsemi 9 458 Add to BOM
SBC857BDW1T1G Bipolar (BJT) Transistor Array 2 PNP (Dual) 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363 onsemi 9 458 Add to BOM