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TO-247
(372 pièces au total)| Numéro de pièce fabricant | Description | Fabricant | En stock | Opération |
|---|---|---|---|---|
| IDW75D65D1 | Industry 14 diodes designed for general purpose, power, and switching applications | infineon | 6 566 | Add to BOM |
| IMZA65R027M1H | N-channel silicon carbide MOSFET with a voltage rating of 650V and a current rating of 59A in a TO-247 package | Infineon | 9 406 | Add to BOM |
| IMW65R027M1H | Reliable and efficient power electronic component for industrial us | INFINEON TECHNOLOGIES AG | 9 997 | Add to BOM |
| IMW65R048M1H | Robust TO-package for rugged use in industrial control system | infineon | 7 002 | Add to BOM |
| IPW60R099P7 | ROHS TO-247-3 MOSFETs IPW60R099P7 | Infineon | 7 852 | Add to BOM |
| IPW60R080P7 | N-MOSFET transistor with unipolar design and 600V voltage rating | infineon | 7 506 | Add to BOM |
| SCH2080KE | Compact IC design optimizes energy efficiency and reduces system complexity | ROHM Semiconductor | 8 403 | Add to BOM |
| IPW60R060P7 | Compact TO-package design for efficient heat dissipation and space saving | Infineon | 5 238 | Add to BOM |
| TIC263M | A TRIAC with 600V V(DRM) and 25A I(T)RMS, suitable for four-quadrant applications | Bourns | 5 951 | Add to BOM |
| STTH50W06SW | STTH50W06SW Rectifier Diode: 600V 50A, Dual Anode, TO-247 Package | STMicroelectronics | 9 458 | Add to BOM |
| STTH60W02CW | Comes in a TO-247 package with 3 pins and a tab for easy installation | STMicroelectronics | 9 458 | Add to BOM |
| RURG75120 | Rectifiers capable of handling 80 amperes at 1200 volts | onsemi | 8 746 | Add to BOM |
| RURG3020 | 30A silicon rectifier diode with a voltage rating of 200V | onsemi | 9 458 | Add to BOM |
| RURG50100 | Rectifiers with a maximum current of 50 amps and a voltage capacity of 1000 volts | HARRIS SEMICONDUCTOR | 5 546 | Add to BOM |
| IRFP3710 | Robust and reliable transistor for harsh environments | Infineon | 7 468 | Add to BOM |
| IRFP150N | Rugged and reliable TO-package for demanding environment | Infineon | 8 348 | Add to BOM |
| IRFP4710 | N-Channel Silicon Metal-oxide Semiconductor FET | Infineon Technologies AG | 7 590 | Add to BOM |
| IRFP250N | Compact and reliable A switch perfect for power supplie | Infineon | 4 148 | Add to BOM |
| IRFP064N | Efficient power management in a compact package for demanding systems | Infineon | 7 461 | Add to BOM |
| IDW40G65C5 | TO-247 Schottky rectifier diode rated for 650V and 40A | Infineon | 9 628 | Add to BOM |
| IPW60R099P6 | High-performance power MOSFET | infineon | 5 449 | Add to BOM |
| IPW90R340C3 | Transistor MOSFET with N-channel, 900V voltage rating, 15A current capacity, TO-247 package | Infineon | 6 579 | Add to BOM |
| IPW60R125P6 | High power MOSFET with excellent performance | Infineon Technologies | 5 233 | Add to BOM |
| IPW60R041P6 | Specifications: IPW60R041P6 TO-247-3 MOSFETs, ROHS-Certified | infineon | 5 763 | Add to BOM |
| IXTH03N400 | Power MOSFET in TO-247 package with N-channel configuration, 4kV breakdown voltage, and 0.3A maximum current | ixys | 9 953 | Add to BOM |
| IPW60R160P6 | Product Name: IPW60R160P6 | Infineon Technologies | 5 850 | Add to BOM |
| HUF75343G3 | Low on-resistance of 9mΩ at 75A | ON Semiconductor | 6 130 | Add to BOM |
| IDW30E65D1 | IGBT products with rapid switching diodes | Infineon Technologies | 9 122 | Add to BOM |
| DSEI60-10A | DSEI60-10A is a fast recovery epitaxial diode with a voltage rating of 1000 Vrrm and a current rating of 60 A | IXYS | 5 220 | Add to BOM |
| DSSK60-0045A | SBD TO-247AD Schottky Barrier Diodes ROHS | IXYS | 9 458 | Add to BOM |
| C4D20120D | Silicon Carbide Schottky Diode, 1.2KV, 68A, TO-247 | CREE | 8 260 | Add to BOM |
| ALF08N16V | Compact design for through-hole application | tt electronics | 7 054 | Add to BOM |
| IDW40G120C5B | Discrete Schottky diodes and rectifiers using silicon carbide | Infineon Technologies Corporation | 2 501 | Add to BOM |
| IDW20G120C5B | 1200V, 20A Silicon Carbide Schottky Diode | Infineon Technologies Corporation | 2 100 | Add to BOM |
| IKW40N65ES5 | IGBT Transistors Trenchstop 5 IGBT | INFINEON | 7 163 | Add to BOM |
| RJH3047 | High-speed power switching device for demanding applications | Renesas | 3 616 | Add to BOM |
| IRF100P219 | TO-247-3 MOSFETs ROHS | Infineon Technologies Corporation | 2 611 | Add to BOM |
| IPW65R050CFD7A | Reliably manage power with this advanced MOSFET solution | Infineon Technologies Corporation | 2 139 | Add to BOM |
| IPW65R035CFD7A | Optimized for high performance and low power consumptio | Infineon Technologies Corporation | 3 710 | Add to BOM |
| AIKW30N60CT | AIKW30N60CT, ROHS TO-247-3-41 IGBTs | Infineon Technologies Corporation | 3 228 | Add to BOM |
| IGW30N65L5 | IGW30N65L5 TO-247-3 | infineon | 7 206 | Add to BOM |
| IDW40E65D2 | TO-247 packaged rectifier diode engineered for swift switching tasks, rated at 650V and 80A, boasting a response time of 75ns | Infineon Technologies | 5 747 | Add to BOM |
| SCT2080KE | 1200V 40A Silicon Carbide MOSFET N-Channel TO247 | rohm semiconductor | 6 083 | Add to BOM |
| IPW80R280P7 | TO-247 packaged N-channel MOSFET capable of handling 17A current and 800V voltage | infineon | 6 537 | Add to BOM |
| IDW30G120C5B | High-quality diode constructed with Silicon Carbide material for superior performance in power applications | infineon | 6 009 | Add to BOM |
| SCT2450KE | High-performance RF transistor for mobile amplifier applications requiring high power and efficiency | ROHM Semiconductor | 5 606 | Add to BOM |
| TIC263D | Robust and reliable solution for power management | Bourns | 9 547 | Add to BOM |
| MTW8N60E | Silicon Metal-oxide Semiconductor FET TO-247AE Power Field-Effect Transistor 8A I(D) 600V 0.5ohm 1-Element N-Channel | onsemi | 7 260 | Add to BOM |
| MTW45N10E | 100V N-Channel MOSFET with 45A Current Rating in TO-247 Package | onsemi | 6 881 | Add to BOM |
| MTW35N15E | N-Channel Silicon MOSFET with 0.65ohm On-Resistance in TO-247AE Package | onsemi | 7 788 | Add to BOM |
Autre forfait