Ce site web utilise des cookies. En utilisant ce site, vous consentez à l'utilisation de cookies. Pour plus d'informations, veuillez consulter notre politique de confidentialité.
TO-247
(372 pièces au total)| Numéro de pièce fabricant | Description | Fabricant | En stock | Opération |
|---|---|---|---|---|
| KCH30A15 | Silicon Rectifier Diode with Schottky Characteristics | Kyocera | 6 809 | Add to BOM |
| IXBH1836 | TO-247AD IGBT BiMST-Very High Voltage Transistors Disc IGBT | Littelfuse | 7 183 | Add to BOM |
| IRFP3415 | 150V maximum voltage | Infineon Technologies AG | 9 588 | Add to BOM |
| IRFP2907Z | Ideal for power electronics and motor control systems | International Rectifier | 9 568 | Add to BOM |
| IPW65R150CFD | Power MOSFET in N-channel configuration suitable for high-voltage applications with a current rating of 22.4A | infineon | 6 489 | Add to BOM |
| IPW65R070C6 | ROHS compliant 650V MOSFET with 53.5A current rating | Infineon | 7 837 | Add to BOM |
| IPW65R037C6 | Robust N-channel MOSFET for efficient power contr | infineon | 9 450 | Add to BOM |
| IPW60R190P6 | Power Field-Effect Transistor IPW60R190P6 | INFINEON TECHNOLOGIES AG | 6 283 | Add to BOM |
| IHW15N120R3 | 12000V blocking voltage, 30A current handling capacity | infineon | 5 920 | Add to BOM |
| IGW60N60H3 | IGBTs for Power Electronics: , A, with Field Sto | infineon | 6 587 | Add to BOM |
| IGW100N60H3 | High Voltage IGBT Transistors | infineon | 7 666 | Add to BOM |
| BUV48CFI | BUV48CFI high-voltage semiconductor | STMICROELECTRONICS | 5 757 | Add to BOM |
| STC03DE220HV | 2200V ESBT transistor with a current rating of 3A (STC03DE220HV) | STMicroelectronics | 9 458 | Add to BOM |
| BIDW50N65T | IGBT Transistors with 650V and 50A in TO-247 package | Bourns | 5 900 | Add to BOM |
| BDW83C | Robust signal processing componen | Stmicroelectronics | 9 458 | Add to BOM |
| IPW60R120P7 | Power MOSFET Transistor IPW60R120P7 | Infineon Technologies Corporation | 2 932 | Add to BOM |
| IPW60R037P7 | Versatile power transistor suitable for various industries | Infineon | 6 063 | Add to BOM |
| IPW60R031CFD7 | TO-247-3 MOSFETs ROHS | Infineon Technologies Corporation | 3 538 | Add to BOM |
| IGW75N65H5 | 120A current handling capability | infineon | 9 203 | Add to BOM |
| IDW60C65D1 | Power Diodes for General Purpose Switching in INDUSTRY 14 | Infineon Technologies | 9 776 | Add to BOM |
| IRF200P222 | Advanced semiconductor component for industrial automation syste | INFINEON TECHNOLOGIES AG | 7 107 | Add to BOM |
| SPW11N60C3 | Silicon N-Channel Power MOSFET with 11A Current Rating | Infineon | 8 469 | Add to BOM |
| DSP25-12A | Rectifier Diode 1.2KV 25A 3-Pin(3+Tab) TO-247AD | IXYS | 8 542 | Add to BOM |
| BYW99W-200 | High Efficiency Fast Recovery Diode | STMicroelectronics | 9 458 | Add to BOM |
| NGTG50N60FWG | IGBT Trench 600 V 100 A 223 W Through Hole TO-247-3 | onsemi | 9 458 | Add to BOM |
| STTA3006CW | STTA3006CW is a 3-pin diode switching device housed in a TO-247 package, offering a maximum voltage of 600V and a current rating of 30A | Stmicroelectronics | 9 458 | Add to BOM |
| IPW90R500C3 | N-Channel 900 V 11A (Tc) 156W (Tc) Through Hole PG-TO247-3-1 | Infineon | 7 257 | Add to BOM |
| IPW65R045C7 | TO-247-3 MOSFETs ROHS | Infineon Technologies | 8 693 | Add to BOM |
| DSP45-12A | Silicon Avalanche Rectifier Diode with TO-247AD Package, 1-Phase, 2-Element, 45 Amps, 1200 Volts V(RRM) | Ixys | 7 636 | Add to BOM |
| IPW65R110CFD | MOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2 | Infineon | 6 181 | Add to BOM |
| STW48N60M2 | N-channel 600 V, 60 mOhm typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package | Stmicroelectronics | 9 448 | Add to BOM |
| STGW60H65DFB | IGBT Trench Field Stop 650 V 80 A 375 W Through Hole TO-247 | Stmicroelectronics | 9 458 | Add to BOM |
| STW45NM50 | N-channel 500 V, 0.08 Ohm ty., 45 A MDmesh Power MOSFET in a TO-247 package | Stmicroelectronics | 8 288 | Add to BOM |
| STW21N150K5 | N-channel 1500 V, 0.7 Ohm typ., 14 A MDmesh K5 Power MOSFET in a TO-247 packge | Stmicroelectronics | 9 458 | Add to BOM |
| TIP2955 | 15 A, 60 V PNP Bipolar Power Transistor | Onsemi | 9 458 | Add to BOM |
| KCH30A10 | Crystal Oscillators KCH30A10 | Kyocera | 8 841 | Add to BOM |
| DSP45-16A | 1600V dual 48A rectifier diode TO247, TU | Ixys | 6 855 | Add to BOM |
| SGSD100 | Trans Darlington NPN 80V 25A 130000mW 3-Pin(3+Tab) TO-247 Tube | STMICROELECTRONICS | 7 540 | Add to BOM |
| SGW20N60 | IGBT NPT 600 V 40 A 179 W Through Hole PG-TO247-3-1 | Infineon | 9 286 | Add to BOM |
| STGW35HF60WD | IGBT 600 V 60 A 200 W Through Hole TO-247-3 | STMicroelectronics | 9 458 | Add to BOM |
| STGW60H65F | IGBT Trench Field Stop 650 V 120 A 360 W Through Hole TO-247-3 | STMicroelectronics | 9 754 | Add to BOM |
| STGWA45HF60WDI | Trans IGBT Chip N-CH 600V 80A 310W 3-Pin(3+Tab) TO-247 Tube | STMicroelectronics | 9 458 | Add to BOM |
| STPS60L40CW | DIODE ARRAY SCHOTTKY 40V TO247-3 | STMicroelectronics | 9 458 | Add to BOM |
| FGH20N60UFD | IGBT, 600V, 20A, Field Stop | ON SEMICONDUCTOR | 5 964 | Add to BOM |
| FGH75N60UF | IGBT, 600V, 75A, Field Stop | ON SEMICONDUCTOR | 6 214 | Add to BOM |
| FGH60N60SF | IGBT, 600V, 60A, 2.2V, TO-247High Speed Field Stop | onsemi | 8 875 | Add to BOM |
| GT30J101 | IGBT Transistors | TOSHIBA | 5 348 | Add to BOM |
| SF305C | Rectifiers 3A 300V 35ns | Rectron | 9 458 | Add to BOM |
| F20W60C3 | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MTO-3P, 3 PIN | SHINDENGEN ELECTRIC MANUFACTURING CO LTD | 8 522 | Add to BOM |
| IRF150P220 | N-Channel 150 V 203A (Tc) 556W (Tc) Through Hole PG-TO247-3 | Infineon Technologies Corporation | 2 588 | Add to BOM |
Autre forfait