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TO-247
(372 pièces au total)| Numéro de pièce fabricant | Description | Fabricant | En stock | Opération |
|---|---|---|---|---|
| DSEI120-06A | Made of Silicon, TO-247AD Package | Littelfuse | 9 458 | Add to BOM |
| DSEI30-10A | Product DSEI30-10A: Diode Switch for High Voltage Applications, 1KV, TO-247AD Package | Littelfuse | 8 557 | Add to BOM |
| SPW24N60C3 | Infineon SPW24N60C3 is a N-channel MOSFET transistor with a current rating of 24.3 A and a voltage capability of 650 V, in a 3-pin TO-247 package | Infineon | 5 711 | Add to BOM |
| BU941ZP | NPN Power Darlington Transistors Darlington | Stmicroelectronics | 9 944 | Add to BOM |
| FGH60N60UFD | Premium IGBT transistor for high-frequency switching operation | Onsemi | 3 129 | Add to BOM |
| FDH45N50F | Amplifier-grade N-channel transistor | NXP Semiconductor | 2 095 | Add to BOM |
| SPW47N65C3 | Discover unparalleled quality and innovation in the SPW47N65C3, an N-Channel MOSFET Transistor | Infineon | 3 102 | Add to BOM |
| SPW47N60CFD | TO-247 MOSFET, 600V N-channel, 46A Continuous Drain Current | Infineon | 3 086 | Add to BOM |
| SPW47N60C3 | SPW47N60C3: Transistor, unipolar N-MOSFET, 650V, 47A, 415W, PG-TO247-3 | Infineon | 2 832 | Add to BOM |
| SPW35N60CFD | Robust and compact TO247-3 package for easy integration and space-saving | Infineon | 2 173 | Add to BOM |
| SPW32N50C3 | SPW32N50C3 MOSFET: N-Channel Transistor | Infineon | 3 187 | Add to BOM |
| SPW20N60S5 | N-channel MOSFET SPW20N60S5, capable of handling currents up to 20A and voltages of 600V | Infineon | 2 732 | Add to BOM |
| SPW17N80C3 | Gate-source threshold voltage of 3.9V at a drain current of 11A | Infineon | 3 461 | Add to BOM |
| SPW15N60C3 | TO-247 package MOSFET with 600V N-channel and 15A rating | Infineon | 3 044 | Add to BOM |
| NGTB50N60FLWG | NGTB50N60FLWG product description: N-channel IGBT chip capable of handling up to 600V and 100A | Onsemi | 9 458 | Add to BOM |
| IPW60R099CP | 600V 31A TO-247-3 CoolMOS CP N-Channel MOSFET | Infineon | 3 434 | Add to BOM |
| IPW60R099C6 | High-performance N-channel TO-247AC-3 MOSFET featuring a threshold voltage of 3 | Infineon | 3 452 | Add to BOM |
| IPW60R075CP | 600V, 39A rated N-channel MOSFET in TO-247 package for various applications | Infineon | 2 637 | Add to BOM |
| IPW60R070C6 | N-channel 600V 53A Automotive Power MOSFET in TO-247 package | Infineon | 3 783 | Add to BOM |
| IPW60R045CP | CoolMOS CP MOSFET N-Ch 650V 60A TO247-3 | Infineon | 3 674 | Add to BOM |
| IPW60R041C6 | Power Field-Effect Transistor IPW60R041C6 | Infineon | 3 503 | Add to BOM |
| FGH40T65UPD | N-Channel Trans IGBT Chip Encased in TO-247 Tube | Onsemi | 9 458 | Add to BOM |
| STW14NC50 | Ideal for power management and switching applications, offering exceptional performanc | Stmicroelectronics | 2 314 | Add to BOM |
| IPW65R080CFD | IPW65R080CFD: A cutting-edge N-Channel MOSFET Transistor | Infineon | 3 028 | Add to BOM |
| DSEI60-06A | With improved forward voltage characteristics and impressive breakdown voltages of up to 1200V, the FRED Low Vf series stands out | Littelfuse | 9 458 | Add to BOM |
| STW9N150 | Reliable and efficient power switching with TO247 package, ideal for industrial control systems | Stmicroelectronics Nv | 9 458 | Add to BOM |
| STW12NK90Z | High-power N-channel MOSFET for demanding application | Stmicroelectronics Nv | 9 458 | Add to BOM |
| STW20NM60 | Low resistance and fast switching make it ideal for DC-DC converters | Stmicroelectronics | 6 302 | Add to BOM |
| STW26NM50 | N-channel 500V MOSFET with a typical on-resistance of 100 milliohms and a maximum drain current of 26A, packaged in TO-247 | Stmicroelectronics | 2 285 | Add to BOM |
| STW9NK90Z | 900 V N-channel MOSFET featuring 1.1 Ohm typ. resistance and 8 A current capacity in TO-247 package | Stmicroelectronics | 8 580 | Add to BOM |
| STW8NK80Z | High current rating of 6.2 A | Stmicroelectronics | 3 398 | Add to BOM |
| STPS40L15CW | Schottky diode with 15V voltage and 40A current in TO-247 package | Stmicroelectronics | 3 584 | Add to BOM |
| BUF420AW | The BUF420AW serves as a Bipolar Transistor (BJT), catering to diverse circuitry needs | Stmicroelectronics | 2 358 | Add to BOM |
| STW14NK50Z | TO-247AC-packaged Power Field-Effect Transistor, N-Channel with 14A Drain Current and 500V Voltage, featuring 0 | Stmicroelectronics | 2 907 | Add to BOM |
| STPS61150CW | STPS61150CW offers low forward voltage drop and fast switching speed for improved circuit performance | Stmicroelectronics | 3 083 | Add to BOM |
| STPS40H100CW | A 3-pin (3+Tab) configuration for easy installation and connection | Stmicroelectronics | 5 606 | Add to BOM |
| STW12N150K5 | STW12N150K5 is a Single N-Channel Power MOSFET with a high voltage rating of 1500 V | Stmicroelectronics | 2 466 | Add to BOM |
| STW70N60DM2 | N-channel power MOSFET with a maximum voltage of 600V and current of 66A, enclosed in a TO-247 casing | Stmicroelectronics | 3 663 | Add to BOM |
| FCH104N60F | N-Channel 600 V 37A (Tc) 357W (Tc) Through Hole TO-247-3 | ON | 126 | Add to BOM |
| FGH60N60SMD | IGBT, 600V, 60A, Field Stop | Onsemi | 5 602 | Add to BOM |
| FGH40T100SMD | Advanced Trench-Gate IGBT for Motor Control and Power Electronics | Onsemi | 9 458 | Add to BOM |
| HUF75344G3 | N-Channel 55 V 75A (Tc) 285W (Tc) Through Hole TO-247-3 | ON Semiconductor, LLC | 2 893 | Add to BOM |
| FGH40N60SMDF | IGBT Field Stop 600 V 80 A 349 W Through Hole TO-247-3 | onsemi | 9 458 | Add to BOM |
| TIP142G | Bipolar (BJT) Transistor NPN - Darlington 100 V 10 A 125 W Through Hole TO-247-3 | onsemi | 9 458 | Add to BOM |
| NGTB50N120FL2WG | IGBT Trench Field Stop 1200 V 100 A 535 W Through Hole TO-247 | onsemi | 9 458 | Add to BOM |
| NGTB40N120FL2WG | IGBT Trench Field Stop 1200 V 80 A 535 W Through Hole TO-247 | onsemi | 9 458 | Add to BOM |
| IRFP260N | Robust power management solution for demanding systems requiring high current and voltage handlin | Infineon | 8 015 | Add to BOM |
| IXGH10N60AU1 | TO-247AD Insulated Gate Bipolar Transistor with 20A I(C) and 600V V(BR)CES, N-Channel | IXYS CORP | 8 726 | Add to BOM |
| DSEI120-12A | Advanced design for enhanced power handling and longevit | IXYS | 9 458 | Add to BOM |
| H20R1202 | Restricted Distribution for Authorized Partners Only | Infineon | 3 169 | Add to BOM |
Autre forfait