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Microchip APT5010LVRG
Trans MOSFET N-CH 500V 47A 3-Pin(3+Tab) TO-264 Tube
Marques: Microchip Technology, Inc
Pièce Fabricant #: APT5010LVRG
Fiche de données: APT5010LVRG Datasheet (PDF)
Colis/Caisse: TO264
type de produit: Transistors
Statut RoHS:
État des stocks: 2563 pièces, nouveau original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Ajouter à la nomenclatureAPT5010LVRG Description générale
Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channelswitch-mode power transistors with lower EMI characteristics and lower costcompared to previous generation devices. These MOSFETs / FREDFETs have beenoptimized for both hard and soft switching in high frequency, high voltageapplications rated above 500 W.
The Power MOS 8™ series is a result of extensive research into quiet switching.Input and reverse transfer capacitance values as well as their ratio were setat specific values to achieve quiet switching with minimal switching loss. ThePower MOS 8™ series of devices are inherently quiet switching, stable whenconnected in parallel, very efficient, and lower cost than previousgenerations.
Power MOS 7® is a family of low loss, high voltage, N-Channel enhancementmode power MOSFETS. Both conduction and switching losses are addressed withPower MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combineslower conduction and switching losses along with exceptionally fast switchingspeeds.
Power MOS V® can still provide the best trade-off between performance andcost in some applications. Power MOS V® utilizes a low resistance aluminummetal gate structure. This allows for faster gate signal propagation than ispossible with conventional polysilicon gate structures. The result is extremelylow internal chip equivalent gate resistances (EGR) that are up to an order ofmagnitude lower than competitive devices which enables uniform high speedswitching across the entire chip.
Body Diode Options
MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is aMOSFET with a faster recovery intrinsic body diode. This results in improvedreliability in ZVS circuits due to shorter minority carrier lifetime andincreased commutation dv/dt ruggedness. If a fast recovery body diode is notneeded, MOSFET versions are available.
Caractéristiques
- Power Semiconductors, Power Modules and RF Power MOSFETs Catalog
- Eliminating Parasitic Oscillation between Parallel MOSFETs
- High Frequency Resonant Half Bridge
- Improved Power MOSFETS Boost Efficiency IN A 3.5kw Single Phase PFC
- Introduction to MOSFETs
- Latest Technology PT IGBTs vs. Power MOSFETs
- Making Use of Gate Charge Information In MOSFET and IGBT Data Sheets
- Optimizing MOSFET and IGBT Gate Current to Minimize dv/dt Induced Failures in SMPS Circuits
- Turn Off Snubber Design for High Frequency Modules
- VDS(on) VCE(sat) Measurement
Caractéristiques
| Paramètre | Valeur | Paramètre | Valeur |
|---|---|---|---|
| Product Type | Silicon Discrete MOSFET | Continuous Drain Current at 25°C (A) [max] | 20 - 103 |
| Package Type(s) | D3PAK, SOT-227, T-MAX, TO-247, TO-264, TO-264MAX | Continuous Drain Current at 25°C [I(D)] (A) [family max] | 103 |
| feature-category | Power MOSFET | feature-material | |
| feature-process-technology | Power MOS V | feature-configuration | Single |
| feature-channel-mode | Enhancement | feature-channel-type | N |
| feature-number-of-elements-per-chip | 1 | feature-maximum-drain-source-voltage-v | 500 |
| feature-maximum-gate-source-voltage-v | ±30 | feature-maximum-gate-threshold-voltage-v | |
| feature-maximum-continuous-drain-current-a | 47 | feature-maximum-drain-source-resistance-mohm | 100@10V |
| feature-typical-gate-charge-vgs-nc | 312@10V | feature-typical-gate-charge-10v-nc | 312 |
| feature-typical-input-capacitance-vds-pf | 7400@25V | feature-typical-output-capacitance-pf | |
| feature-maximum-power-dissipation-mw | 520000 | feature-packaging | Tube |
| feature-rad-hard | feature-pin-count | 3 | |
| feature-supplier-package | TO-264 | feature-standard-package-name1 | |
| feature-cecc-qualified | No | feature-esd-protection | |
| feature-escc-qualified | feature-military | No | |
| feature-aec-qualified | No | feature-aec-qualified-number | |
| feature-auto-motive | No | feature-p-pap | No |
| feature-eccn-code | EAR99 | feature-svhc | |
| feature-svhc-exceeds-threshold | No |
Expédition
| Type d'expédition | Frais d'expédition | Délai de mise en œuvre | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 jours |
 |
LA POSTE AÉRIENNE ENREGISTRÉE | $20.00-$40.00 (0.50 KG) | 2-5 jours |
Délai de traitement : les frais d'expédition dépendent des différentes zones et pays.
Paiement
| Modalités de paiement | Frais de main | |
|---|---|---|
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Virement bancaire | facturer des frais bancaires de 30,00 $ US. |
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Pay Pal | facturer des frais de service de 4,0 %. |
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Carte de crédit | facturez des frais de service de 3,5%. |
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Western union | charge US.00 banking fee. |
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Paiement de Petit Montant | facturer des frais bancaires de 0,00 $ US. |
Garanties
1. Les composants électroniques que vous achetez incluent une garantie de 365 jours, nous garantissons la qualité du produit.
2. Si certains des articles que vous avez reçus ne sont pas de qualité parfaite, nous organiserons de manière responsable votre remboursement ou votre remplacement. Mais les articles doivent rester dans leur état d’origine.
Emballage
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Tous les produits seront emballés dans un sac antistatique. Expédié avec une protection antistatique ESD.
L'étiquette de l'emballage extérieur ESD utilisera les informations de notre société : numéro de pièce, marque et quantité.
Nous inspecterons toutes les marchandises avant expédition, garantirons que tous les produits sont en bon état et que les pièces sont neuves et correspondent à la fiche technique originale.
Une fois que toutes les marchandises sont garanties sans problème après l'emballage, nous les emballerons en toute sécurité et les enverrons par Global Express. Il présente une excellente résistance à la perforation et à la déchirure ainsi qu’une bonne intégrité du joint.
Points de pièce
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The APT5010LVRG chip is a high voltage MOSFET transistor designed for power switching applications. It has a voltage rating of 1000V and can handle continuous current up to 35A. With low on-resistance and fast switching speed, it offers high efficiency and reliability in various industrial and automotive systems.
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Equivalent
The APT5010LVRG chip is equivalent to IRFS3207ZPBF, IRL3705ZSPBF, and IPP50R199CP. -
Features
The APT5010LVRG is a power MOSFET designed with low on-resistance and fast switching speed. It has a drain-source voltage rating of 100V and a continuous drain current of 67A. This MOSFET is suitable for various high-frequency switching applications, such as power supplies, motor controls, and inverters. -
Pinout
The APT5010LVRG is a power MOSFET transistor with a TO-247 package. It has three pins: gate, drain, and source. The gate is used to control the flow of current between the drain and the source, making it suitable for power switching applications. -
Manufacturer
The manufacturer of the APT5010LVRG is Advanced Power Electronics Corp. (APEC). APEC is a semiconductor company specializing in the design, development, and production of power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and other power electronics components. -
Application Field
The APT5010LVRG is widely used in various applications including switching regulators, power management in industrial and consumer electronics, motor control, and battery charging systems. Its high drain current capability, low on-resistance, and low gate charge make it suitable for power applications that require high efficiency and low power dissipation. -
Package
The APT5010LVRG chip comes in a TO-247 package type, has a rectifier form, and has a size of 3.0 mm x 25.78 mm x 16.51 mm.
Fiche de données PDF
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