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Infineon IDW30G65C5
High Voltage Schottky Diode with 30A Current Rating and TO-247 Housing
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Marques: Infineon
Pièce Fabricant #: IDW30G65C5
Fiche de données: IDW30G65C5 Fiche de données (PDF)
Colis/Caisse: TO-247
Statut RoHS:
État des stocks: 9 720 pièces, nouveau original
type de produit: Single Diodes
Warranty: 1 Year Ovaga Warranty - Find Out More
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*Tous les prix sont en USD
Qté | Prix unitaire | Prix ext |
---|---|---|
1 | $20,832 | $20,832 |
200 | $8,062 | $1612,400 |
500 | $7,778 | $3889,000 |
1000 | $7,638 | $7638,000 |
En stock: 9 720 PC
IDW30G65C5 Description générale
The IDW30G65C5 diode is a reliable and durable component that is built to withstand high temperatures and harsh operating conditions. Its TO-247 package provides mechanical stability and ease of mounting, making it a popular choice for various industrial and automotive applications
Caractéristiques
- Vbr at 650V
- Improved Figure of Merit (Qc x Vf)
- No reverse recovery charge
- Soft switching reverse
- recovery waveform
- Temperature independent
- switching behavior
- High operating temperature
- (Tj max 175°C)
- Improved surge capability
- Pb-free lead plating
- 10 years manufacturing of SiC diodes
- Benefts
- Higher safety margin against
- Overvoltage; best match with
- CoolMOS™ 650V products
- Improved efciency over all
- load conditions
- Increased efciency compared to
- Silicon Diode alternatives
- Reduced EMI compared to snappier
- Silicon diode reverse recovery
- waveform
- Highly stable switching performance
- Reduced cooling requirements
- Reduced risks of thermal runaway
- RoHS compliant
- High quality know-how and capacity
- in SiC diode manufacture
Caractéristiques
Paramètre | Valeur | Paramètre | Valeur |
---|---|---|---|
Manufacturer | Infineon | Product Category | Schottky Diodes & Rectifiers |
RoHS | Details | Product | Schottky Silicon Carbide Diodes |
Mounting Style | Through Hole | Package / Case | TO-247-3 |
Configuration | Single | Technology | SiC |
If - Forward Current | 30 A | Vrrm - Repetitive Reverse Voltage | 650 V |
Vf - Forward Voltage | 1.8 V | Ifsm - Forward Surge Current | 165 A |
Ir - Reverse Current | 6.1 uA | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Series | CoolSiC |
Tradename | CoolSiC | Brand | Infineon Technologies |
Pd - Power Dissipation | 150 W | Product Type | Schottky Diodes & Rectifiers |
Factory Pack Quantity | 240 | Subcategory | Diodes & Rectifiers |
Part # Aliases | SP000937052 IDW30G65C5FKSA1 | Unit Weight | 1.340411 oz |
Package | Tube | Product Status | Discontinued at Digi-Key |
Voltage - DC Reverse (Vr) (Max) | 650 V | Current - Average Rectified (Io) | 30A |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 30 A | Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns | Current - Reverse Leakage @ Vr | 1.1 mA @ 650 V |
Capacitance @ Vr, F | 860pF @ 1V, 1MHz | Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3-1 | Operating Temperature - Junction | -55°C ~ 175°C |
Base Product Number | IDW30G65 |
Expédition
Type d'expédition | Frais d'expédition | Délai de mise en œuvre | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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LA POSTE AÉRIENNE ENREGISTRÉE | $20.00-$40.00 (0.50 KG) | 2-5 jours |
Délai de traitement : les frais d'expédition dépendent des différentes zones et pays.
Paiement
Modalités de paiement | Frais de main | |
---|---|---|
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Virement bancaire | facturer des frais bancaires de 30,00 $ US. |
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Pay Pal | facturer des frais de service de 4,0 %. |
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Carte de crédit | facturez des frais de service de 3,5%. |
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Western union | charge US.00 banking fee. |
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Paiement de Petit Montant | facturer des frais bancaires de 0,00 $ US. |
Garanties
1. Les composants électroniques que vous achetez incluent une garantie de 365 jours, nous garantissons la qualité du produit.
2. Si certains des articles que vous avez reçus ne sont pas de qualité parfaite, nous organiserons de manière responsable votre remboursement ou votre remplacement. Mais les articles doivent rester dans leur état d’origine.
Emballage
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Étape1 :Produit
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Étape2 :Emballage sous vide
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Étape3 :Sac antistatique
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Étape4 :Emballage individuel
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Étape5 :Boîtes d'emballage
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Étape6 :étiquette d'expédition à code-barres
Tous les produits seront emballés dans un sac antistatique. Expédié avec une protection antistatique ESD.
L'étiquette de l'emballage extérieur ESD utilisera les informations de notre société : numéro de pièce, marque et quantité.
Nous inspecterons toutes les marchandises avant expédition, garantirons que tous les produits sont en bon état et que les pièces sont neuves et correspondent à la fiche technique originale.
Une fois que toutes les marchandises sont garanties sans problème après l'emballage, nous les emballerons en toute sécurité et les enverrons par Global Express. Il présente une excellente résistance à la perforation et à la déchirure ainsi qu’une bonne intégrité du joint.
Points de pièce
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The IDW30G65C5 is a power semiconductor chip designed for high frequency and high efficiency applications. It is commonly used in switch mode power supplies, motor control, and other high voltage applications. The chip features low conduction and switching losses, making it suitable for power electronics in various industrial and consumer electronic devices.
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Equivalent
The equivalent products of the IDW30G65C5 chip are the Infineon FF1650R17IE4 and FF300R17KE3. These chips feature similar specifications and can be used as substitute options for the IDW30G65C5 in various applications such as power electronics and motor control. -
Features
The IDW30G65C5 is a 650V Super Junction Insulated Gate Bipolar Transistor (IGBT) that offers low conduction and switching losses for high efficiency power conversion applications. It features a 30A continuous collector current, 120A pulsed collector current, and an ultra-low saturation voltage for improved performance and reliability. -
Pinout
The IDW30G65C5 is a 650V CoolMOS™ CFD7 SJ MOSFET with a TO-247-4 pin configuration. It has 3 pins - gate (G), drain (D), and source (S). The gate pin is used to control the switching of the MOSFET, while the drain pin carries the main current flow, and the source pin serves as the reference potential. -
Manufacturer
The manufacturer of the IDW30G65C5 is Infineon Technologies AG. Infineon Technologies is a semiconductor manufacturer that specializes in power and chip solutions for various applications, including automotive, industrial, and consumer electronics. They are a multinational company with headquarters in Germany and a global presence in the semiconductor industry. -
Application Field
The IDW30G65C5 is a silicon carbide power module suitable for applications such as motor drives, renewable energy systems, and industrial power supplies. Its high power density, high frequency capability, and robustness make it ideal for use in electric vehicles, solar inverters, and other high-power applications requiring efficient and reliable power conversion. -
Package
The IDW30G65C5 chip comes in a TO-247 package type, with a transistor form. The size of the chip is also 29.0mm x 11.0mm, making it suitable for power applications.
Nous fournissons des produits de haute qualité, un service attentionné et une garantie après-vente
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Nous avons des produits riches, pouvons répondre à vos différents besoins.
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La quantité minimum de commande commence à partir de 1 pièce.
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Les frais d'expédition internationaux les plus bas commencent à partir de 0,00 $
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Garantie de qualité de 365 jours pour tous les produits