Infineon IRFR5410PBF
IRFR5410 - 100V Single P-Channel Power MOSFET in a D-Pak package
Marques: Infineon
Pièce Fabricant #: IRFR5410PBF
Fiche de données: IRFR5410PBF Datasheet (PDF)
Colis/Caisse: TO-252-3
type de produit: Transistors
Statut RoHS:
État des stocks: 3211 pièces, nouveau original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Ajouter à la nomenclatureIRFR5410PBF Description générale
The IRFR5410PBF is a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for high-efficiency applications. It features a low on-resistance of 0.03 ohms, which allows for high current capability and low power dissipation. The device is rated for a voltage of 100V and a continuous drain current of 23A, making it suitable for a wide range of power switching applications.The IRFR5410PBF is housed in a TO-252 package, which offers easy mounting and thermal dissipation. It also features a high-speed switching capability, making it ideal for high-frequency applications. The MOSFET is designed to operate over a wide temperature range, from -55°C to 150°C, ensuring reliability in various operating conditions.Additionally, the IRFR5410PBF has a low gate charge and capacitance, allowing for fast switching speeds and reduced switching losses. It also features a rugged design that can withstand high energy pulses and transients.
Caractéristiques
- Advanced MOSFET technology
- Low on-resistance
- Fast switching speed
- High power dissipation
- Improved thermal performance
- RoHS compliant
- Halogen-free
- TO-252 packaging
- Suitable for high efficiency power management applications
Application
- Motor control
- Power management
- Switch mode power supplies
- Battery charging circuits
- Solar panel inverters
- Industrial control systems
- Variable frequency drives
- Automotive electronics
- LED lighting
- Electric vehicle power systems
Caractéristiques
Paramètre | Valeur | Paramètre | Valeur |
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Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TO-252-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 13 A | Rds On - Drain-Source Resistance | 205 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Qg - Gate Charge | 38.7 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 66 W | Channel Mode | Enhancement |
Brand | Infineon Technologies | Configuration | Single |
Fall Time | 46 ns | Height | 2.3 mm |
Length | 6.5 mm | Product Type | MOSFET |
Rise Time | 58 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Type | HEXFET Power MOSFET | Typical Turn-Off Delay Time | 45 ns |
Typical Turn-On Delay Time | 15 ns | Width | 6.22 mm |
Part # Aliases | SP001557110 |
Expédition
Type d'expédition | Frais d'expédition | Délai de mise en œuvre | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 jours | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 jours | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 jours | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 jours | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 jours | |
LA POSTE AÉRIENNE ENREGISTRÉE | $20.00-$40.00 (0.50 KG) | 2-5 jours |
Délai de traitement : les frais d'expédition dépendent des différentes zones et pays.
Paiement
Modalités de paiement | Frais de main | |
---|---|---|
Virement bancaire | facturer des frais bancaires de 30,00 $ US. | |
Pay Pal | facturer des frais de service de 4,0 %. | |
Carte de crédit | facturez des frais de service de 3,5%. | |
Western union | charge US.00 banking fee. | |
Paiement de Petit Montant | facturer des frais bancaires de 0,00 $ US. |
Garanties
1. Les composants électroniques que vous achetez incluent une garantie de 365 jours, nous garantissons la qualité du produit.
2. Si certains des articles que vous avez reçus ne sont pas de qualité parfaite, nous organiserons de manière responsable votre remboursement ou votre remplacement. Mais les articles doivent rester dans leur état d’origine.
Emballage
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Étape1 :Produit
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Étape2 :Emballage sous vide
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Étape3 :Sac antistatique
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Étape4 :Emballage individuel
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Étape5 :Boîtes d'emballage
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Étape6 :étiquette d'expédition à code-barres
Tous les produits seront emballés dans un sac antistatique. Expédié avec une protection antistatique ESD.
L'étiquette de l'emballage extérieur ESD utilisera les informations de notre société : numéro de pièce, marque et quantité.
Nous inspecterons toutes les marchandises avant expédition, garantirons que tous les produits sont en bon état et que les pièces sont neuves et correspondent à la fiche technique originale.
Une fois que toutes les marchandises sont garanties sans problème après l'emballage, nous les emballerons en toute sécurité et les enverrons par Global Express. Il présente une excellente résistance à la perforation et à la déchirure ainsi qu’une bonne intégrité du joint.
Points de pièce
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The IRFR5410PBF is a power MOSFET transistor designed for use in switching applications. It has a low on-resistance and high-speed switching capabilities, making it suitable for power management in various electronic devices. With a compact size and efficient performance, the IRFR5410PBF chip is commonly used in power supplies, motor control, and automotive applications.
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Equivalent
The equivalent products of the IRFR5410PBF chip are the IRFR5410, IRFG4BC40UD and IRFZ44N. These are all power MOSFET transistors with similar specifications and characteristics, suitable for a range of applications such as power supply, motor control, and switching circuits. -
Features
IRFR5410PBF is a N-channel power MOSFET with a Vds voltage rating of 100V, a continuous drain current of 12A, and a low on-resistance of 0.23 ohms. It has a TO-252 package, making it suitable for a variety of applications including power supplies, motor control, and lighting control. -
Pinout
The IRFR5410PBF is a power MOSFET with a TO-252 package. It has 3 pins, including a gate (G), drain (D), and source (S). The gate pin is used to control the flow of current between the drain and source pins, making it suitable for power switching applications. -
Manufacturer
The manufacturer of the IRFR5410PBF is Infineon Technologies AG. Infineon Technologies is a German semiconductor manufacturer that produces a wide range of power semiconductors, sensors, and microcontrollers for automotive, industrial, and consumer electronics applications. The company is a leading supplier of power electronics components and solutions worldwide. -
Application Field
The IRFR5410PBF is commonly used in applications such as power supplies, motor control, and automotive systems. It is also utilized in battery management systems, LED lighting, and audio amplifiers due to its high current handling capacity and low on-state resistance. -
Package
The IRFR5410PBF chip is a power MOSFET packaged in a TO-252 form, also known as DPAK (TO-263) package. Its size is typically around 6.7mm x 7.7mm x 2.2mm.
Fiche de données PDF
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