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TO-247-3
(1804 pièces au total)| Numéro de pièce fabricant | Description | Fabricant | En stock | Opération |
|---|---|---|---|---|
| STW56N60M2 | N-Channel 600 V 52A (Tc) 350W (Tc) Through Hole TO-247-3 | STMicroelectronics, Inc | 3 026 | Add to BOM |
| HGTG20N60A4D | IGBT 600 V 70 A 290 W Through Hole TO-247-3 | Onsemi | 9 458 | Add to BOM |
| STW20NB50 | MOSFET N-Channel 500V 20A TO-247 | Stmicroelectronics | 9 458 | Add to BOM |
| SGW15N60 | High-performance IGBT transistors for power applications | Infineon | 9 458 | Add to BOM |
| FDH15N50 | N-Channel UltraFET MOSFET with a 15A current and 500V voltage capacity | Onsemi | 9 458 | Add to BOM |
| C3D20060D | Schottky Diode, Silicon Carbide, 2x10A, 600V, TO-247 package, Temp Unit | Wolfspeed | 7 884 | Add to BOM |
| CS45-16IO1 | SCR 1.6 kV 75 A Standard Recovery Through Hole TO-247AD | IXYS | 9 931 | Add to BOM |
| UF3C170400K3S | SICFET N-CH 1700V 7.6A TO247-3 | Qorvo | 9 680 | Add to BOM |
| IHW30N160R2 | IGBT 1600V 60A 312W TO247-3 | Infineon Technologies | 9 204 | Add to BOM |
| IRFPC50APBF | 0APBF power semiconductor | Vishay | 9 458 | Add to BOM |
| APT1001RBVRG | High-power transistor for demanding applicatio | Microchip | 9 458 | Add to BOM |
| RJH60F5DPQ-A0#T0 | Transistors for IGBT Application | Renesas | 3 340 | Add to BOM |
| IXFR120N20 | ISOPLUS certified component for increased safet | IXYS | 1 | Add to BOM |
| CLA60MT1200NHR | TRIAC Standard 1.2 kV 66 A Through Hole ISO247 | IXYS | 8 457 | Add to BOM |
| MHT1803B | MHT1803B features: 300W power output, 200MHz frequency, TO-247-3L package format | NXP USA Inc. | 5 007 | Add to BOM |
| C5D50065D | High-power Schottky diode for demanding applications | Wolfspeed, Inc. | 5 022 | Add to BOM |
| SF2004PT | Silicon Rectifier Diode 1 Phase 10A 200V VRRM with 2 Elements, TO-247AD, Green Plastic TO-3P 3 Pin | Taiwan Semiconductor Corporation | 6 850 | Add to BOM |
| SF1606PT | Diode Super Fast Recovery Rectifier | Taiwan Semiconductor Corporation | 6 665 | Add to BOM |
| NDD04N60Z-1G | N-Channel 600 V 4.1A (Tc) 83W (Tc) Through Hole IPAK | onsemi | 9 458 | Add to BOM |
| KSF30A20B | Fast Recovery Diode | KYOCERA AVX | 9 458 | Add to BOM |
| IRFP460P | 00V N-channel MOSFET | Vishay Siliconix | 6 686 | Add to BOM |
| IXGH24N60C4D1 | Durable TO-247AD package ensures reliable operation | IXYS | 9 406 | Add to BOM |
| DSEP30-12AR | Diode 1200 V 30A Through Hole ISOPLUS247™ | IXYS | 6 187 | Add to BOM |
| CLA60MT1200NHB | TRIAC Standard 1.2 kV 66 A Through Hole TO-247AD | IXYS | 9 458 | Add to BOM |
| 60APU04PBF | High-power rectifier for robust power conversion application | Vishay General Semiconductor - Diodes Division | 7 582 | Add to BOM |
| 60APU02PBF | 200V 60A rectifiers | Vishay General Semiconductor - Diodes Division | 7 861 | Add to BOM |
| 80EPS12 | Swapping Rectifier Diode 1.2KV 80A 3-Pin(3+Tab) TO-247AC | Vishay General Semiconductor - Diodes Division | 8 464 | Add to BOM |
| 30CPF04 | Fast switching speed of 160ns for high performance applications | Vishay General Semiconductor - Diodes Division | 7 162 | Add to BOM |
| IRGPC50FD2 | IGBT rated at 600 volts | Infineon Technologies | 7 165 | Add to BOM |
| IRGP4050PBF | IGBT Transistors for Plasma Display Panels | Infineon Technologies | 9 744 | Add to BOM |
| IRGP30B60KD-EP | With a power rating of 304W | Infineon | 9 458 | Add to BOM |
| IRG8P60N120KDPBF | High-power N-channel IGBT for demanding industrial applications, rated at kV, , an | Infineon Technologies | 6 885 | Add to BOM |
| IRG4PH50UPBF | High power IGBT transistor | Infineon | 9 458 | Add to BOM |
| IRG4PH40UPBF | IGBT Transistors with UltraFast Switching Speeds up to 40kHz at 1200V | Infineon Technologies | 7 252 | Add to BOM |
| IRG4PH40UD2-EP | N-Channel Insulated Gate Bipolar Transistor, 41A Collector Current, 1200V Breakdown Voltage, TO-247AD Package, Lead-Free | Infineon Technologies | 8 890 | Add to BOM |
| IRG4PH40KPBF | ROHS IGBTs 160W 30A 1.2kV TO-247AC | Infineon | 9 458 | Add to BOM |
| IRG4PF50WPBF | High Power IGBT Transistor | Infineon | 9 458 | Add to BOM |
| IRG4PC60FPBF | 247AC package, 600V Fast 1-8 kHz Discrete IGBT in a TO247-3, RoHS | Infineon | 9 458 | Add to BOM |
| IRG4PC40WPBF | High Power IGBT Transistors for Fast Switching Applications | Infineon | 9 458 | Add to BOM |
| IRG4PC40UDPBF | UltraFast switching capabilities for improved performance | Infineon Technologies | 6 990 | Add to BOM |
| IRG4PC40SPBF | TO-247AC 600V 60A 160W IGBTs ROHS | Infineon | 9 458 | Add to BOM |
| IRG4PC30WPBF | High Power IGBT Transistors for 60-150kHz Operations | Infineon Technologies | 8 992 | Add to BOM |
| IRG4PC30UPBF | Insulated Gate Bipolar Transistor with a 23A I(C) rating and 600V V(BR)CES, featuring an N-Channel, TO-247AC package with 3 pins | Infineon | 9 458 | Add to BOM |
| IRG4PC30UDPBF | Product Description: TO-247AC-3 IGBTs ROHS | Infineon Technologies | 7 453 | Add to BOM |
| IRG4PC30SPBF | ROHS IGBTs, 100W 34A 600V TO-247AC | Infineon Technologies | 6 495 | Add to BOM |
| IRG4PC30KDPBF | TO-247AC package with 3 pins and a tab for secure mounting and easy connection | Infineon | 9 458 | Add to BOM |
| IXSH30N60C | TO-247AD-packaged IGBT Chip, featuring N-channel technology, capable of handling 600V and 55A | Ixys | 8 284 | Add to BOM |
| IXGH39N60B | IXGH39N60B transistors with a current rating of 76 Amps | IXYS | 9 596 | Add to BOM |
| IXGH10N300 | Voltage rating of 3000V | IXYS | 8 661 | Add to BOM |
| IRGPC40S | Trusted IGBT component | Infineon | 6 859 | Add to BOM |
Autre forfait