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TO-247-3

(1804 pièces au total)
Numéro de pièce fabricant Description Fabricant En stock Opération
IXYH40N120B3D1 GenX3™ IGBT Transistor, 1.2kV, 40A, 480W, TO247-3 IXYS 5 642 Add to BOM
KSQ15A04 Product Description: KSQ15A04 KYOCERA AVX 9 458 Add to BOM
KSF30A40B Reliable and robust switching solution for industrial control system KYOCERA AVX 9 458 Add to BOM
KCH30A20 Schottky diode with a voltage rating of 200V and a current rating of 30A in a TO-247 package KYOCERA AVX 9 548 Add to BOM
KCF25A20 The KCF25A20: A 3-pin TO-247 Diode Switching Component, rated at 200V and 25A Kyocera Corporation 8 655 Add to BOM
IRGP4660DPBF Infineon's IRGP4660DPBF IGBT is designed for 60 amps and 600 volts, packaged in the TO-247AC with 3 pins International Rectifier 5 377 Add to BOM
IXYH40N90C3D1 IXYH40N90C3D1 Transistor: 900V, 90A, TO-247AD IXYS 6 148 Add to BOM
IRGP4640DPBF Robust and reliable for high-reliability designs Infineon Technologies 9 345 Add to BOM
GA50JT12-247 1200V/100A JFET with standard specifications GeneSiC Semiconductor 8 253 Add to BOM
IXDH30N120D1 N-Channel IGBT Chip for Transistor 1200V 60A 300W 3-Pin(3+Tab) IXYS 9 458 Add to BOM
IRG4PH40UDPBF This product is a combination of IGBT and anti-parallel diode in a single package Infineon Technologies 5 120 Add to BOM
IXGH16N170A Contact us for further details IXYS 9 007 Add to BOM
APT30GT60BRG Insulated Gate Bipolar Transistor - NPT Standard Speed APT30GT60BRG Microchip Technology 6 982 Add to BOM
IRG4PH30KPBF N-Channel IGBT Chip with 1200V Voltage Rating, 20A Current Rating, and 100W Power Rating in TO-247AC Package Infineon 9 458 Add to BOM
SF3006PT Rugged and reliable component suitable for harsh environment Taiwan Semiconductor Corporation 6 392 Add to BOM
IXZR08N120 1200V N Channel ZMOS Switch MOSFET RF MOSFET Transistors ISO PLUS 247 08A IXYS-RF 7 108 Add to BOM
FGH50N6S2 Powerful FGHNIGBT chip for high-reliability applications Fairchild Semiconductor 5 255 Add to BOM
KSF60F60B Rectifiers for fast recovery with 600V and 60A KYOCERA AVX 9 458 Add to BOM
VS-60APH03-N3 Rectifier Diode, 1 Phase, 1 Element, 60A, 300V VRRM, Silicon, TO-247AC, Halogen-Free and RoHS Compliant, Plastic Package-3 Vishay General Semiconductor - Diodes Division 7 429 Add to BOM
VS-80APS12-M3 80A 3-Pin Diode Switching Tube Vishay General Semiconductor - Diodes Division 6 506 Add to BOM
IDW75D65D1XKSA1 Robust IGBT solution for industrial power applications Infineon Technologies 5 269 Add to BOM
IXFH220N20X3 Efficient energy management tool for renewable energy systems and smart grids IXYS 5 049 Add to BOM
IXTH220N20X4 IXTH220N20X4: MOSFET Device for High Power Applications IXYS 8 327 Add to BOM
IXFH150N30X3 IXFH150N30X3 is a high-performance N-channel MOSFET with ultra junction technology IXYS 9 458 Add to BOM
IXFH100N30X3 TO247-3 packaged N-MOSFET transistor IXYS 9 458 Add to BOM
MSC035SMA070B This MOSFET has a low on-resistance of 44mΩ at 30A and a power dissipation of 283W at 20V Microchip Technology 8 896 Add to BOM
MSC050SDA120B Diode 1200 V 109A Through Hole TO-247-3 MICROCHIP TECHNOLOGY INC 6 257 Add to BOM
MSC035SMA170B N-Channel 1700 V 68A (Tc) 370W (Tc) Through Hole TO-247-3 Microchip Technology 7 733 Add to BOM
MSC025SMA120B MSC025SMA120B: A MOSFET featuring Silicon Carbide (SiC) technology Microchip 6 576 Add to BOM
MSC080SMA120B Silicon Carbide N-Channel MOSFET 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube Microchip Technology 9 268 Add to BOM
MSC015SMA070B SILICON CARBIDE MOSFETs, represented by product MSC015SMA070B, offer advanced functionality and reliability in various electronic systems Microchip Technology 6 055 Add to BOM
IXTH80N65X2 Trans MOSFET N-CH 650V 80A 3-Pin(3+Tab) TO-247 IXYS 9 458 Add to BOM
IXTH34N65X2 IXTH34N65X2 Power Field-Effect Transistor IXYS 9 941 Add to BOM
IXTH48N65X2 Learn more about the Power Field-Effect Transistor IXTH48N65X2 IXYS 9 458 Add to BOM
IXFX120N65X2 Robust design for heavy-duty power control system IXYS 9 458 Add to BOM
IXFX120N20 MOSFET with a voltage rating of 200V and a current rating of 120A Littelfuse 5 273 Add to BOM
IXFH34N65X2 Reliable and A operation in through-hole packag IXYS 7 140 Add to BOM
IXFH12N90 N-Channel Silicon Metal-oxide Semiconductor FET Littelfuse 8 368 Add to BOM
TIP141G Bipolar (BJT) Transistor NPN - Darlington 80 V 10 A 125 W Through Hole TO-247-3 onsemi 6 797 Add to BOM
TIP140G Bipolar (BJT) Transistor NPN - Darlington 60 V 10 A 125 W Through Hole TO-247-3 onsemi 8 761 Add to BOM
STW21NM50N Three-pin MOSFET with tab included for easy mounting Stmicroelectronics 8 954 Add to BOM
STW13NK80Z 00V Si technology Stmicroelectronics 9 458 Add to BOM
STW15NB50 High-Voltage N-Channel MOSFET Transistor in TO-247AA Package Stmicroelectronics 8 473 Add to BOM
STW60NM50N MOSFET N-channel with a voltage rating of 500V, a low resistance of 0 Stmicroelectronics 8 541 Add to BOM
STW9NB80 800 Volt N-Channel MOSFET with 9 Amp capability Stmicroelectronics 9 627 Add to BOM
STW20NA50 TO-247 Package N-Channel Power MOSFET with 3 Pins Stmicroelectronics 7 290 Add to BOM
SCH2080KEC Compact power device suitable for DC-DC converters, motor drives, and other high-power systems Rohm Semiconductor 7 979 Add to BOM
NTD5867NL-1G Single N-Channel Logic Level Power MOSFET 60V, 19A, 39mΩ, DPAK INSERTION MOUNT, 75-TUBE onsemi 9 458 Add to BOM
NTD4963N-35G Power MOSFET 30V 44A 9.6 mOhm Single N-Channel DPAK onsemi 9 458 Add to BOM
MTW32N20E MTW32N20E stands out as a high-performance Power MOSFET suitable for demanding applications with its single N-channel configuration Onsemi 7 849 Add to BOM