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TO-247-3
(1804 pièces au total)Numéro de pièce fabricant | Description | Fabricant | En stock | Opération |
---|---|---|---|---|
IXYH40N120B3D1 | GenX3™ IGBT Transistor, 1.2kV, 40A, 480W, TO247-3 | IXYS | 5 642 | Add to BOM |
KSQ15A04 | Product Description: KSQ15A04 | KYOCERA AVX | 9 458 | Add to BOM |
KSF30A40B | Reliable and robust switching solution for industrial control system | KYOCERA AVX | 9 458 | Add to BOM |
KCH30A20 | Schottky diode with a voltage rating of 200V and a current rating of 30A in a TO-247 package | KYOCERA AVX | 9 548 | Add to BOM |
KCF25A20 | The KCF25A20: A 3-pin TO-247 Diode Switching Component, rated at 200V and 25A | Kyocera Corporation | 8 655 | Add to BOM |
IRGP4660DPBF | Infineon's IRGP4660DPBF IGBT is designed for 60 amps and 600 volts, packaged in the TO-247AC with 3 pins | International Rectifier | 5 377 | Add to BOM |
IXYH40N90C3D1 | IXYH40N90C3D1 Transistor: 900V, 90A, TO-247AD | IXYS | 6 148 | Add to BOM |
IRGP4640DPBF | Robust and reliable for high-reliability designs | Infineon Technologies | 9 345 | Add to BOM |
GA50JT12-247 | 1200V/100A JFET with standard specifications | GeneSiC Semiconductor | 8 253 | Add to BOM |
IXDH30N120D1 | N-Channel IGBT Chip for Transistor 1200V 60A 300W 3-Pin(3+Tab) | IXYS | 9 458 | Add to BOM |
IRG4PH40UDPBF | This product is a combination of IGBT and anti-parallel diode in a single package | Infineon Technologies | 5 120 | Add to BOM |
IXGH16N170A | Contact us for further details | IXYS | 9 007 | Add to BOM |
APT30GT60BRG | Insulated Gate Bipolar Transistor - NPT Standard Speed APT30GT60BRG | Microchip Technology | 6 982 | Add to BOM |
IRG4PH30KPBF | N-Channel IGBT Chip with 1200V Voltage Rating, 20A Current Rating, and 100W Power Rating in TO-247AC Package | Infineon | 9 458 | Add to BOM |
SF3006PT | Rugged and reliable component suitable for harsh environment | Taiwan Semiconductor Corporation | 6 392 | Add to BOM |
IXZR08N120 | 1200V N Channel ZMOS Switch MOSFET RF MOSFET Transistors ISO PLUS 247 08A | IXYS-RF | 7 108 | Add to BOM |
FGH50N6S2 | Powerful FGHNIGBT chip for high-reliability applications | Fairchild Semiconductor | 5 255 | Add to BOM |
KSF60F60B | Rectifiers for fast recovery with 600V and 60A | KYOCERA AVX | 9 458 | Add to BOM |
VS-60APH03-N3 | Rectifier Diode, 1 Phase, 1 Element, 60A, 300V VRRM, Silicon, TO-247AC, Halogen-Free and RoHS Compliant, Plastic Package-3 | Vishay General Semiconductor - Diodes Division | 7 429 | Add to BOM |
VS-80APS12-M3 | 80A 3-Pin Diode Switching Tube | Vishay General Semiconductor - Diodes Division | 6 506 | Add to BOM |
IDW75D65D1XKSA1 | Robust IGBT solution for industrial power applications | Infineon Technologies | 5 269 | Add to BOM |
IXFH220N20X3 | Efficient energy management tool for renewable energy systems and smart grids | IXYS | 5 049 | Add to BOM |
IXTH220N20X4 | IXTH220N20X4: MOSFET Device for High Power Applications | IXYS | 8 327 | Add to BOM |
IXFH150N30X3 | IXFH150N30X3 is a high-performance N-channel MOSFET with ultra junction technology | IXYS | 9 458 | Add to BOM |
IXFH100N30X3 | TO247-3 packaged N-MOSFET transistor | IXYS | 9 458 | Add to BOM |
MSC035SMA070B | This MOSFET has a low on-resistance of 44mΩ at 30A and a power dissipation of 283W at 20V | Microchip Technology | 8 896 | Add to BOM |
MSC050SDA120B | Diode 1200 V 109A Through Hole TO-247-3 | MICROCHIP TECHNOLOGY INC | 6 257 | Add to BOM |
MSC035SMA170B | N-Channel 1700 V 68A (Tc) 370W (Tc) Through Hole TO-247-3 | Microchip Technology | 7 733 | Add to BOM |
MSC025SMA120B | MSC025SMA120B: A MOSFET featuring Silicon Carbide (SiC) technology | Microchip | 6 576 | Add to BOM |
MSC080SMA120B | Silicon Carbide N-Channel MOSFET 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube | Microchip Technology | 9 268 | Add to BOM |
MSC015SMA070B | SILICON CARBIDE MOSFETs, represented by product MSC015SMA070B, offer advanced functionality and reliability in various electronic systems | Microchip Technology | 6 055 | Add to BOM |
IXTH80N65X2 | Trans MOSFET N-CH 650V 80A 3-Pin(3+Tab) TO-247 | IXYS | 9 458 | Add to BOM |
IXTH34N65X2 | IXTH34N65X2 Power Field-Effect Transistor | IXYS | 9 941 | Add to BOM |
IXTH48N65X2 | Learn more about the Power Field-Effect Transistor IXTH48N65X2 | IXYS | 9 458 | Add to BOM |
IXFX120N65X2 | Robust design for heavy-duty power control system | IXYS | 9 458 | Add to BOM |
IXFX120N20 | MOSFET with a voltage rating of 200V and a current rating of 120A | Littelfuse | 5 273 | Add to BOM |
IXFH34N65X2 | Reliable and A operation in through-hole packag | IXYS | 7 140 | Add to BOM |
IXFH12N90 | N-Channel Silicon Metal-oxide Semiconductor FET | Littelfuse | 8 368 | Add to BOM |
TIP141G | Bipolar (BJT) Transistor NPN - Darlington 80 V 10 A 125 W Through Hole TO-247-3 | onsemi | 6 797 | Add to BOM |
TIP140G | Bipolar (BJT) Transistor NPN - Darlington 60 V 10 A 125 W Through Hole TO-247-3 | onsemi | 8 761 | Add to BOM |
STW21NM50N | Three-pin MOSFET with tab included for easy mounting | Stmicroelectronics | 8 954 | Add to BOM |
STW13NK80Z | 00V Si technology | Stmicroelectronics | 9 458 | Add to BOM |
STW15NB50 | High-Voltage N-Channel MOSFET Transistor in TO-247AA Package | Stmicroelectronics | 8 473 | Add to BOM |
STW60NM50N | MOSFET N-channel with a voltage rating of 500V, a low resistance of 0 | Stmicroelectronics | 8 541 | Add to BOM |
STW9NB80 | 800 Volt N-Channel MOSFET with 9 Amp capability | Stmicroelectronics | 9 627 | Add to BOM |
STW20NA50 | TO-247 Package N-Channel Power MOSFET with 3 Pins | Stmicroelectronics | 7 290 | Add to BOM |
SCH2080KEC | Compact power device suitable for DC-DC converters, motor drives, and other high-power systems | Rohm Semiconductor | 7 979 | Add to BOM |
NTD5867NL-1G | Single N-Channel Logic Level Power MOSFET 60V, 19A, 39mΩ, DPAK INSERTION MOUNT, 75-TUBE | onsemi | 9 458 | Add to BOM |
NTD4963N-35G | Power MOSFET 30V 44A 9.6 mOhm Single N-Channel DPAK | onsemi | 9 458 | Add to BOM |
MTW32N20E | MTW32N20E stands out as a high-performance Power MOSFET suitable for demanding applications with its single N-channel configuration | Onsemi | 7 849 | Add to BOM |
Autre forfait