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TO-247-3
(1804 pièces au total)| Numéro de pièce fabricant | Description | Fabricant | En stock | Opération |
|---|---|---|---|---|
| GAN063-650WSAQ | TO-247-3 package ROHS compliant MOSFET with 143W power dissipation capability | Nexperia | 9 458 | Add to BOM |
| LSIC1MO170E1000 | Power Field-Effect Transistor | Littelfuse | 8 996 | Add to BOM |
| C2M1000170D | Description: N-Channel MOSFET | Wolfspeed | 6 597 | Add to BOM |
| IXFH26N60Q | Compact and efficient for high-reliability design | IXYS | 9 458 | Add to BOM |
| IXFH44N50P | High-power N-channel MOSFET with 500V voltage and 44A current in TO-247AD configuration | Littelfuse | 8 532 | Add to BOM |
| IXTX210P10T | Ultra-low RDS(on) and high current handling capacity | IXYS | 9 458 | Add to BOM |
| IXTX200N10L2 | Trans MOSFET N-CH 100V 200A 3-Pin(3+Tab) ISOPLUS 247 | IXYS | 9 458 | Add to BOM |
| IXTH110N10L2 | IXTH110N10L2: MOSFET engineered for linear power delivery | LITTELFUSE INC | 6 507 | Add to BOM |
| IXTH20N60 | Featuring a current rating of 20 Amps, a voltage rating of 600V, and an on-resistance of 0 | IXYS CORP | 7 519 | Add to BOM |
| IXFX26N90 | 26 Amps MOSFET with 900V and 0.3 Rds | IXYS CORP | 7 707 | Add to BOM |
| IKW20N60T | High power IGBT with 650 volts, 20 amps, and 1.5 volts threshold in TO247-3 packaging | Infineon | 8 317 | Add to BOM |
| STW45NM50FD | High-power 500V N-channel MOSFET rated for 45A | Stmicroelectronics | 2 536 | Add to BOM |
| STW43NM60ND | STW43NM60ND is an N-Channel power MOSFET with a 600 V rating and 88 mΩ on-resistance in a TO-247 package | Stmicroelectronics | 2 545 | Add to BOM |
| STW20NM50FD | FAST DIODE integrated into this N-Channel Power MOSFET for improved switching performance | Stmicroelectronics | 2 037 | Add to BOM |
| STW20NM50 | Maximum voltage rating of 500V and maximum current of 20A for this transistor | Stmicroelectronics | 2 646 | Add to BOM |
| STW18NK80Z | N-Channel Transistor MOSFET with 800V Voltage Rating, 19A Current Rating, TO-247 Package | Stmicroelectronics | 2 277 | Add to BOM |
| STW14NM50 | 14 Amp N-Channel MOSFET with a 500 Volt breakdown voltage | Stmicroelectronics | 2 085 | Add to BOM |
| STW12NK95Z | Flange Mount Power MOSFET with 950V N-Channel SuperMESH Technology | Stmicroelectronics | 3 895 | Add to BOM |
| HGTG5N120BND | Three-pin (with three tabs) TO-247 tube containing a 1200V N-channel Insulated Gate Bipolar Transistor (IGBT) chip rated for 21A current | Onsemi | 9 458 | Add to BOM |
| HGTG30N60A4 | IGBT, 600V, SMPS | Onsemi | 9 458 | Add to BOM |
| HGTG11N120CND | 1.2kV NPT (Non-Punch Through) IGBTs TO-247AC-3 ROHS 298W 43A | Onsemi | 9 458 | Add to BOM |
| HGTG30N60A4D | 600V, SMPS IGBT | Onsemi | 9 458 | Add to BOM |
| FDH5500 | The FDH5500 product details include a voltage rating of 55 volts and a current rating of 75 amperes | Onsemi | 9 458 | Add to BOM |
| IXKR25N80C | High voltage 25 amp N-channel MOSFET in ISOPLUS 247 package | IXYS | 9 458 | Add to BOM |
| IXFH120N20P | performance power MOSFET with 120A current rating and 200V voltage capability | IXYS | 9 458 | Add to BOM |
| MUR3060WTG | UltraFast Rectifiers MUR3060WTG 600V 30A | Onsemi | 8 021 | Add to BOM |
| SIHG20N50C-E3 | SIHG20N50C-E3 is a MOSFET with a voltage rating of 500V and a maximum current of 20A, featuring a low on-resistance of 270mΩ at 10V and 10A | Vishay | 9 458 | Add to BOM |
| IRFP460APBF | Operating at 500V, the IRFP460APBF is a N-Channel HEXFET MOSFET | Vishay Siliconix | 6 572 | Add to BOM |
| IRFP350PBF | 0A, 190W, 400V N-MOSFET Transistor, unipolar, TO247AC | Vishay | 9 458 | Add to BOM |
| IRFP264PBF | N-channel enhancement-mode transistor | Vishay | 5 076 | Add to BOM |
| IRFP460A | Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247 - Bulk | Vishay | 7 073 | Add to BOM |
| HGTG20N60C3 | An IGBT, such as HGTG20N60C3, is a crucial component in power electronics for high-power applications | Onsemi | 9 458 | Add to BOM |
| STTH30R06CW | Dual Common Cathode Diode STTH30R06CW: Offering 15A current at 2 | STMicroelectronics, Inc | 2 760 | Add to BOM |
| FGH40N60SFDTU | FGH40N60SFDTU is an IGBT designed for applications requiring high voltage and current capabilities, rated at 600V and 40A | Onsemi | 9 458 | Add to BOM |
| IRFP150NPBF | A powerful electronic switch for high-speed circuits, featuring a .CAC capacitanc | Infineon | 9 458 | Add to BOM |
| STW34NB20 | N-channel MOSFET with 200 volts and 34 amps | STMICROELECTRONICS | 8 132 | Add to BOM |
| RFG60P06E | High voltage 60V Si device | INTERSIL CORP | 6 408 | Add to BOM |
| RFG60P05E | P-Ch Power MOSFET TO-247 | ONSEMI | 8 843 | Add to BOM |
| IRFP450PBF | MOSFET with a planar layout suitable for applications requiring 100V or more | Vishay Siliconix | 8 175 | Add to BOM |
| CMF20120D | 3-Pin TO-247 package | Wolfspeed, Inc. | 5 159 | Add to BOM |
| IXGH20N60AU1 | N-channel power MOSFET with 40 Amps and 600V rating | IXYS | 5 812 | Add to BOM |
| IKW30N60T | TO-247 Tube Transistor IGBT Chip with N-Channel, 600V Voltage, 45A Current, and 187W Power | Infineon Technologies | 6 254 | Add to BOM |
| BUP314 | Distributing innovative electronics since 1988 | Infineon | 3 256 | Add to BOM |
| IKW50N60TA | Trans IGBT Chip N-CH 600V 80A 333W Automotive 3-Pin(3+Tab) TO-247 Tube | Infineon Technologies | 7 722 | Add to BOM |
| IXDH20N120D1 | IXDH20N120D1 IGBT transistors, capable of 20 Amps and designed for 1200 Volts | IXYS | 7 056 | Add to BOM |
| IXTH12N120 | The IXTH12N120 is a N-channel MOSFET featuring a voltage rating of 1 | IXYS | 9 458 | Add to BOM |
| IKW50N60DTP | TO-247-3 IGBTs ROHS | Infineon Technologies Corporation | 3 872 | Add to BOM |
| IRF250P225 | 250V, 49A, 313W | Infineon Technologies | 9 790 | Add to BOM |
| AUIRGP4063D | The AUIRGP4063D IGBT from Infineon, designed to manage currents up to 96 amps and voltages up to 600 volts, with a 3-pin TO-247AC configuration | Infineon | 9 458 | Add to BOM |
| IRFP4004PBF | High-power electronic switch for DC-DC converters | Infineon Technologies | 9 655 | Add to BOM |
Autre forfait