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TO-247-3
(1804 pièces au total)| Numéro de pièce fabricant | Description | Fabricant | En stock | Opération |
|---|---|---|---|---|
| SKW07N120 | Insulated Gate Bipolar Transistor in TO-247-3-1 package, 16.5A current and 1.2kV voltage rated | Infineon | 9 041 | Add to BOM |
| IXXH80N65B4H1 | N-Channel 650V 160A Power | IXYS | 6 785 | Add to BOM |
| IGW30N100T | 1000V IGBT capable of handling 60A current, packaged in TO-247-3 | Infineon | 8 874 | Add to BOM |
| HGTG30N60C3D | HGTG30N60C3D IGBT 63A TO247 | Onsemi | 7 735 | Add to BOM |
| HGTG30N60B3D | Compact design allows for efficient heat dissipation in high-reliability system | Onsemi | 5 103 | Add to BOM |
| HGTG30N60B3 | TO-247 Rail Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) | Onsemi | 9 458 | Add to BOM |
| HGTG27N120BN | IGBT NPT 1200 V 72 A 500 W Through Hole TO-247-3 | onsemi | 9 458 | Add to BOM |
| HGTG20N60A4 | High-Gain Transistor, 600V, SMPS | Onsemi | 6 508 | Add to BOM |
| HGTG12N60A4D | Transistor IGBT chip | Onsemi | 9 604 | Add to BOM |
| HGTG12N60A4 | channel IGBT chip for power applications | Onsemi | 6 593 | Add to BOM |
| HGTG10N120BND | Compact design with a low thermal resistance for efficient cooling | Onsemi | 9 017 | Add to BOM |
| FGH80N60FDTU | N-CH 600V 80A Trans IGBT Chip FGH80N60FDTU with TO-247 Package, 290W Power Dissipation | Onsemi | 6 902 | Add to BOM |
| FGH75N60UFTU | IGBT Transistors N-CH / 600V 75A FS Planar | onsemi | 6 606 | Add to BOM |
| FGH50T65UPD | IGBT Trench Field Stop 650 V 100 A 340 W Through Hole TO-247-3 | onsemi | 9 259 | Add to BOM |
| FGH40N65UFDTU | IGBT Field Stop 650 V 80 A 290 W Through Hole TO-247-3 | onsemi | 7 587 | Add to BOM |
| APT50GT60BRDQ2G | Get in touch for specifics | Microchip Technology | 8 513 | Add to BOM |
| MSC750SMA170B | N-Channel 1700 V 7A (Tc) 68W (Tc) Through Hole TO-247-3 | Microchip Technology | 5 539 | Add to BOM |
| MTW24N40E | Fast switching time and low voltage drop characteristics | Onsemi | 9 144 | Add to BOM |
| IXTH1N250 | Silicon transistor with N-channel MOSFET configuration, 2.5KV voltage rating, and 1.5A current rating | IXYS | 9 620 | Add to BOM |
| IXCH36N250 | Transistor IGBT Chip, N-Type, 2500V, 73A, 595W, TO-247 Package | ixys | 9 119 | Add to BOM |
| IKW40N60H3 | 600V IGBT with Anti-Parallel Diode, 40A | Infineon | 8 871 | Add to BOM |
| IKW25N120H3 | Trans IGBT Chip with 1200V voltage rating, 50A current capability, and 326W power dissipation in TO-247 package | Infineon | 9 590 | Add to BOM |
| HGTG20N50C1D | IGBT Transistor Chip, N-type Channel, 500 Volts, 26 Amperes, TO-247 Package | Harris Corporation | 6 401 | Add to BOM |
| APT5020BVRG | Rugged and reliable N-channel transistor for demanding circuits | Microchip | 9 458 | Add to BOM |
| IGW15T120 | 1200V, 15A IGBT Transistors with Low Loss Technology | Infineon | 6 303 | Add to BOM |
| MSC090SMA070B | N-Channel 700 V Through Hole TO-247-3 | Microchip Technology | 6 428 | Add to BOM |
| BU323ZG | Bipolar (BJT) Transistor NPN - Darlington 350 V 10 A 2MHz 150 W Through Hole TO-247-3 | onsemi | 9 782 | Add to BOM |
| IXGH48N60C3 | Power semiconductor component for high-current applications | IXYS | 7 738 | Add to BOM |
| HGTG40N60B3 | N-Channel Insulated Gate Bipolar Transistor, TO-247, 70A I(C), 600V V(BR)CES | onsemi | 6 439 | Add to BOM |
| HGTG20N60B3D | ON SEMICONDUCTOR HGTG20N60B3D | Onsemi | 5 598 | Add to BOM |
| ARF463AG | RF Mosfet 125 V 50 mA 81.36MHz 15dB 100W TO-247 | Microchip Technology | 7 571 | Add to BOM |
| IXBH12N300 | N-channel Trans IGBT Chip with 3000V voltage rating | IXYS | 9 458 | Add to BOM |
| APT33GF120BRG | Non-Punch-Thru 1200V IGBT APT33GF120BRG | Microchip Technology | 8 417 | Add to BOM |
| IXTH48P20P | Power Field-Effect Transistor | IXYS | 9 458 | Add to BOM |
| IXFH110N10P | N-Channel 100 V 110A (Tc) 480W (Tc) Through Hole TO-247AD (IXFH) | IXYS | 9 458 | Add to BOM |
| RFG40N10 | Power MOSFET for high voltage applications, with a current rating of 40 amps | Onsemi | 8 471 | Add to BOM |
| IXFX80N50P | Low-loss, high-frequency device for modern power electroni | IXYS | 9 458 | Add to BOM |
| IXTH6N100D2 | 6A 1000V MOSFET | IXYS | 8 026 | Add to BOM |
| IXFH12N120P | 12A, 1.2KV N-channel MOSFET, TO-247 package" | IXYS | 9 458 | Add to BOM |
| IXFH21N50 | TO-247AD Power MOSFET: N-Channel, 21A Drain Current, 500V Voltage Rating, 0 | Littelfuse | 8 799 | Add to BOM |
| IXBH2N250 | IGBT Transistors with Disc technology | IXYS | 5 482 | Add to BOM |
| BUF410A | Silicon NPN Transistor | Stmicroelectronics | 7 510 | Add to BOM |
| LSIC1MO170E0750 | 1.7kV N Channel MOSFET | Littelfuse Inc. | 9 289 | Add to BOM |
| HGTG40N60A4 | Trans IGBT Chip N-CH 600V 75A 3-TO-247 | Onsemi | 8 519 | Add to BOM |
| FGH40N120ANTU | IGBT NPT 1200 V 64 A 417 W Through Hole TO-247-3 | onsemi | 9 510 | Add to BOM |
| IXFH6N120P | Tube package of DISCMOSFET | IXYS | 6 479 | Add to BOM |
| IXBH5N160G | Original packaging with seal intact, ready for immediate use | IXYS | 7 543 | Add to BOM |
| HGTG11N120CN | 43A current rating | Onsemi | 9 549 | Add to BOM |
| HGTG20N60B3 | Insulated Gate Bipolar Transistor, 40A Collector Current, 600V Breakdown Voltage, N-Channel, TO-247 | Onsemi | 7 040 | Add to BOM |
| IXFR26N120P | Transistor MOSFET N-channel Silicon 1.2 Kilovolts 15 Amperes 3-pin (3+Tab) ISOPLUS 247 | IXYS | 9 458 | Add to BOM |
Autre forfait