IGW15T120

Points de pièce

• The IGW15T120 is a power module designed for use in industrial applications. It integrates high-performance IGBT technology with gate driver and protection features in a single compact package. This chip is suitable for motor drives, renewable energy systems, and other high-power applications, offering efficient and reliable power conversion.

• Equivalent

  The equivalent products of IGW15T120 chip are Infineon Technologies FF600R12ME4 and STMicroelectronics L6386ED013TR. These chips are also Insulated Gate Bipolar Transistors (IGBTs) designed for high power applications such as motor drives and inverters.

• Features

  IGW15T120 is a 1200V insulated gate bipolar transistor (IGBT) with features such as low VCE(sat), fast switching speed, and high ruggedness. It also has a built-in soft recovery diode, which improves system efficiency and reliability in high power applications such as motor drives and industrial inverters.

• Pinout

  The IGW15T120 has 15 pins and is an insulated gate bipolar transistor (IGBT) module. It functions as a high-speed switching power semiconductor device used for driving medium to high power applications such as motor drives, inverters, and power supplies.

• Manufacturer

  The IGW15T120 is manufactured by Infineon Technologies AG, a German semiconductor company. Infineon is a global leader in semiconductor solutions, providing a wide range of products for automotive, industrial, and consumer electronics applications.

• Application Field

  The IGW15T120 is suitable for use in various applications, including motor control, solar inverters, induction heating, and welding. Its high voltage and high current capability make it a versatile choice for power electronics, while its fast switching speed and low conduction losses make it ideal for efficient energy conversion in these applications.

• Package

  The IGW15T120 chip comes in a module package type, in the form of a half-bridge, and has a size of 37.5 x 16.5 x 5.8 mm.