NXP 2N7002NXBKR

Points de pièce

• The 2N7002NXBKR is a small signal MOSFET (metal-oxide-semiconductor field-effect transistor) chip designed for low-power, high-speed switching applications. It has a maximum threshold voltage of 2.1V and can handle a continuous drain current of 115mA. This chip is commonly used in digital circuits, power management systems, and portable electronics.

• Equivalent

  Some equivalent products of 2N7002NXBKR chip are Fairchild Semiconductor's 2N7002LT1G and ON Semiconductor's 2N7002LT1G. These are both N-channel MOSFET transistors with similar specifications and capabilities.

• Features

  1. N-channel MOSFET 2. Low threshold voltage (Vth) of 0.8V 3. Low on-resistance (RDS(on)) of 7.5 ohms 4. Small package size (SOT-23) 5. RoHS compliant 6. Suitable for low voltage applications such as power management and signal switching

• Pinout

  The 2N7002NXBKR is a dual N-channel enhancement mode field effect transistor (MOSFET) with a pin count of 3. Pin 1 is the source, Pin 2 is the gate, and Pin 3 is the drain. This MOSFET is commonly used for switching and amplifying electronic signals in low power applications.

• Manufacturer

  The manufacturer of the 2N7002NXBKR is ON Semiconductor. ON Semiconductor is a leading supplier of semiconductor-based solutions for a variety of industries including automotive, communications, consumer electronics, and industrial applications. They specialize in the design and production of power management, analog, and discrete components for a wide range of applications.

• Application Field

  The 2N7002NXBKR is commonly used in applications such as low-power switching circuits, power management, logic-level conversion, and battery charging circuits. Its small size and low on-resistance make it ideal for portable electronics and low-voltage systems requiring efficient power control and regulation.

• Package

  The 2N7002NXBKR chip comes in a SOT-23 package, with a small form factor and size.