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$5000H5TQ1G63BFR-12C
High-speed CMOS technology
Marques: SKHYNIX
Pièce Fabricant #: H5TQ1G63BFR-12C
Fiche de données: H5TQ1G63BFR-12C Fiche de données (PDF)
Colis/Caisse: BGA-96
type de produit: Mémoire
Statut RoHS:
État des stocks: 7 797 pièces, nouveau original
Warranty: 1 Year Ovaga Warranty - Find Out More
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H5TQ1G63BFR-12C Description générale
DescriptionThe H5TQ2G43CFR-xxC, H5TQ2G83CFR-xxC are a 2,147,483,648-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 2Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.FEATURES• VDD=VDDQ=1.5V +/- 0.075V• Fully differential clock inputs (CK, CK) operation• Differential Data Strobe (DQS, DQS)• On chip DLL align DQ, DQS and DQS transition with CK transition• DM masks write data-in at the both rising and falling edges of the data strobe• All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock• Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 12, 13 and 14 supported• Programmable additive latency 0, CL-1, and CL-2 supported• Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9, 10• Programmable burst length 4/8 with both nibble sequential and interleave mode• BL switch on the fly• 8banks• Average Refresh Cycle (Tcase of0 oC~ 95oC) - 7.8 µs at 0oC ~ 85 oC - 3.9 µs at 85oC ~ 95 oC• JEDEC standard 78ball FBGA(x4/x8)• Driver strength selected by EMRS• Dynamic On Die Termination supported• Asynchronous RESET pin supported• ZQ calibration supported• TDQS (Termination Data Strobe) supported (x8 only)• Write Levelization supported• 8 bit pre-fetch• This product in compliance with the RoHS directive.
Caractéristiques
- VDD=VDDQ=1.5V +/- 0.075V
- Fully differential clock inputs (CK, CK) operation
- Differential Data Strobe (DQS, DQS)
- On chip DLL align DQ, DQS and DQS transition with CK
- transition
- DM masks write data-in at the both rising and falling
- edges of the data strobe
- All addresses and control inputs except data,
- data strobes and data masks latched on the
- rising edges of the clock
- Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 12, 13
- and 14 supported
- Programmable additive latency 0, CL-1, and CL-2
- supported
- Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9, 10
- Programmable burst length 4/8 with both nibble
- sequential and interleave mode
- BL switch on the fly
- 8banks
- Average Refresh Cycle (Tcase of0 oC~ 95oC)
- - 7.8 µs at 0oC ~ 85 oC
- - 3.9 µs at 85oC ~ 95 oC
- JEDEC standard 78ball FBGA(x4/x8)
- Driver strength selected by EMRS
- Dynamic On Die Termination supported
- Asynchronous RESET pin supported
- ZQ calibration supported
- TDQS (Termination Data Strobe) supported (x8 only)
- Write Levelization supported
- 8 bit pre-fetch
- This product in compliance with the RoHS directive.
Application
- Main memory for mobile devices, such as smartphones and tablets
- Graphics processing units (GPUs) in gaming consoles and high-performance computing systems
- Digital cameras and camcorders for storing images and videos
- Network routers and switches for packet buffering and forwarding
- Embedded systems and Internet of Things (IoT) devices requiring fast and reliable memory access
- Industrial applications for data logging and processing
Caractéristiques
| Paramètre | Valeur | Paramètre | Valeur |
|---|---|---|---|
| Product Name | H5TQ1G63BFR-12C | Product Type | Memory |
| Manufacturer | Hynix | Memory Type | DDR3 SDRAM |
| Capacity | 1GB | Interface | Parallel |
| Clock Frequency | 533MHz | Operating Voltage | 1.5V |
| Temperature Range | -40°C ~ 85°C | Mounting Type | Surface Mount |
| Package / Case | FBGA-84 |
Expédition
| Type d'expédition | Frais d'expédition | Délai de mise en œuvre | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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LA POSTE AÉRIENNE ENREGISTRÉE | $20.00-$40.00 (0.50 KG) | 2-5 jours |
Délai de traitement : les frais d'expédition dépendent des différentes zones et pays.
Paiement
| Modalités de paiement | Frais de main | |
|---|---|---|
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Virement bancaire | facturer des frais bancaires de 30,00 $ US. |
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Pay Pal | facturer des frais de service de 4,0 %. |
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Carte de crédit | facturez des frais de service de 3,5%. |
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Western union | charge US.00 banking fee. |
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Paiement de Petit Montant | facturer des frais bancaires de 0,00 $ US. |
Garanties
1. Les composants électroniques que vous achetez incluent une garantie de 365 jours, nous garantissons la qualité du produit.
2. Si certains des articles que vous avez reçus ne sont pas de qualité parfaite, nous organiserons de manière responsable votre remboursement ou votre remplacement. Mais les articles doivent rester dans leur état d’origine.
Emballage
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Tous les produits seront emballés dans un sac antistatique. Expédié avec une protection antistatique ESD.
L'étiquette de l'emballage extérieur ESD utilisera les informations de notre société : numéro de pièce, marque et quantité.
Nous inspecterons toutes les marchandises avant expédition, garantirons que tous les produits sont en bon état et que les pièces sont neuves et correspondent à la fiche technique originale.
Une fois que toutes les marchandises sont garanties sans problème après l'emballage, nous les emballerons en toute sécurité et les enverrons par Global Express. Il présente une excellente résistance à la perforation et à la déchirure ainsi qu’une bonne intégrité du joint.
Points de pièce
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The H5TQ1G63BFR-12C chip is a type of synchronous dynamic random-access memory (SDRAM) used in electronic devices such as smartphones and tablets. It offers a capacity of 1 Gbit and operates at a clock speed of 667 MHz. The chip incorporates multiple memory banks and supports a burst mode for improved data transfer rates. It is commonly used as a main memory in consumer electronics due to its high performance and reliability.
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Equivalent
The equivalent products of the H5TQ1G63BFR-12C chip are the H5TQ1G63BFR-12C and other related DDR3 SDRAM chips. -
Features
H5TQ1G63BFR-12C is a type of dynamic random-access memory (DRAM) chip with a capacity of 1 gigabit. It operates at a frequency of 800 MHz and has a data transfer rate of 1.6 gigabytes per second. It is designed for use in various electronic devices such as smartphones, tablets, and other mobile devices. -
Pinout
The H5TQ1G63BFR-12C is a memory chip with a pin count of 78. It is a 1Gb LPDDR2 SDRAM chip used in mobile devices and offers high-speed data transfer rates. -
Manufacturer
The manufacturer of the H5TQ1G63BFR-12C is SK Hynix. SK Hynix is a South Korean semiconductor manufacturing company that specializes in the production of memory chips, including DRAM (Dynamic Random Access Memory) and NAND flash. They are known for their high-quality memory solutions, used in various electronic devices such as smartphones, computers, and servers. -
Application Field
The H5TQ1G63BFR-12C is a type of synchronous dynamic random-access memory (SDRAM) chip commonly used in mobile devices such as smartphones and tablets. It provides high-speed data storage and retrieval for applications such as gaming, multimedia playback, and multitasking. -
Package
The H5TQ1G63BFR-12C chip comes in a BGA package type with a form factor of FBGA and a size of 9mm x 11mm.
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Garantie de qualité de 365 jours pour tous les produits
