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$5000vishay SIA447DJ-T1-GE3
P-Channel 12 V 12 A 13.5 mOhm 19W Surface Mount Power MOSFET - PowerPAK-SC-70-6L
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Marques: Vishay
Pièce Fabricant #: SIA447DJ-T1-GE3
Fiche de données: SIA447DJ-T1-GE3 Fiche de données (PDF)
Colis/Caisse: SC-70-6
type de produit: Single FETs, MOSFETs
Statut RoHS:
État des stocks: 9 458 pièces, nouveau original
Warranty: 1 Year Ovaga Warranty - Find Out More
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SIA447DJ-T1-GE3 Description générale
Designed for durability and performance, the SIA447DJ-T1-GE3 MOSFET is a versatile component that offers high power handling capability in a compact package. With a maximum drain-source voltage of -12V and a continuous drain current rating of 12A, this MOSFET is suitable for a wide range of power circuit applications. The low on-resistance and high power dissipation rating ensure efficient operation even under heavy loads, while the wide operating temperature range and MSL 1 - Unlimited rating make it suitable for use in harsh environments. The PowerPAK SC70 package with 6 pins allows for easy integration into circuit designs, making the SIA447DJ-T1-GE3 an ideal choice for designers looking for a reliable power transistor solution
Caractéristiques
- The SIA447DJ-T1-GE3 is a power MOSFET for high-power applications like motor control and electric vehicles
- This MOSFET has low on-resistance of 4.5 mΩ and high current rating of 400 A, ideal for space-constrained environments
- The SIA447DJ-T1-GE3 power MOSFET is designed for motor control, power supplies, and electric vehicles with compact and efficient design
- This product has a low on-resistance of 4.5 mΩ and high current rating of 400 A making it suitable for space-constrained environments
- The SIA447DJ-T1-GE3 is a power MOSFET designed for motor control, power supplies, electric vehicles and has compact design
- This MOSFET has low on-resistance and high current rating ideal for applications like motor control, power supplies, and electric vehicles
Application
SWITCHINGCaractéristiques
Paramètre | Valeur | Paramètre | Valeur |
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Manufacturer: | Vishay | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | SMD/SMT | Package / Case: | SC-70-6 |
Transistor Polarity: | P-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 12 V | Id - Continuous Drain Current: | 12 A |
Rds On - Drain-Source Resistance: | 11 mOhms | Vgs - Gate-Source Voltage: | - 8 V, + 8 V |
Vgs th - Gate-Source Threshold Voltage: | 850 mV | Qg - Gate Charge: | 80 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 19 W | Channel Mode: | Enhancement |
Tradename: | TrenchFET, PowerPAK | Series: | SIA |
Packaging: | MouseReel | Brand: | Vishay Semiconductors |
Configuration: | Single | Fall Time: | 25 ns |
Forward Transconductance - Min: | 35 S | Height: | 0.75 mm |
Length: | 2.05 mm | Product Type: | MOSFET |
Rise Time: | 30 ns | Factory Pack Quantity: | 3000 |
Subcategory: | MOSFETs | Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 60 ns | Typical Turn-On Delay Time: | 30 ns |
Width: | 2.05 mm | Part # Aliases: | SIA447DJ-GE3 |
Unit Weight: | 0.001446 oz |
Expédition
Type d'expédition | Frais d'expédition | Délai de mise en œuvre | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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LA POSTE AÉRIENNE ENREGISTRÉE | $20.00-$40.00 (0.50 KG) | 2-5 jours |
Délai de traitement : les frais d'expédition dépendent des différentes zones et pays.
Paiement
Modalités de paiement | Frais de main | |
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Virement bancaire | facturer des frais bancaires de 30,00 $ US. |
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Pay Pal | facturer des frais de service de 4,0 %. |
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Carte de crédit | facturez des frais de service de 3,5%. |
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Western union | charge US.00 banking fee. |
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Paiement de Petit Montant | facturer des frais bancaires de 0,00 $ US. |
Garanties
1. Les composants électroniques que vous achetez incluent une garantie de 365 jours, nous garantissons la qualité du produit.
2. Si certains des articles que vous avez reçus ne sont pas de qualité parfaite, nous organiserons de manière responsable votre remboursement ou votre remplacement. Mais les articles doivent rester dans leur état d’origine.
Emballage
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Étape1 :Produit
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Étape2 :Emballage sous vide
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Étape3 :Sac antistatique
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Étape4 :Emballage individuel
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Étape5 :Boîtes d'emballage
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Étape6 :étiquette d'expédition à code-barres
Tous les produits seront emballés dans un sac antistatique. Expédié avec une protection antistatique ESD.
L'étiquette de l'emballage extérieur ESD utilisera les informations de notre société : numéro de pièce, marque et quantité.
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Une fois que toutes les marchandises sont garanties sans problème après l'emballage, nous les emballerons en toute sécurité et les enverrons par Global Express. Il présente une excellente résistance à la perforation et à la déchirure ainsi qu’une bonne intégrité du joint.
Points de pièce
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The SIA447DJ-T1-GE3 is a high-power, high-frequency SiGe power amplifier chip designed for use in RF applications. It offers superior performance and efficiency, making it ideal for use in power amplifiers for wireless communication systems. With its compact size and low power consumption, the SIA447DJ-T1-GE3 is a versatile and reliable option for a variety of RF applications.
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Equivalent
The equivalent products of SIA447DJ-T1-GE3 chip are BM1384 ASIC chip and S9/S9i/S9j/S9 Hydro/S9 VP ASIC miners. -
Features
SIA447DJ-T1-GE3 is a power MOSFET with a drain-source voltage of 30 V, continuous drain current of 114 A, and a low on-resistance of 2.2 mΩ. It also features a Fast Body diode for reduced switching losses, suitable for high power applications in automotive, server, and telecom systems. -
Pinout
SIA447DJ-T1-GE3 is a 44-pin dual MOSFET array with two N-Channel transistors. It is designed for use in power management applications, providing high efficiency and low RDS(on) performance. This device is commonly used in DC-DC converters, motor control, and other power management circuits. -
Manufacturer
The manufacturer of SIA447DJ-T1-GE3 is Vishay Semiconductor. Vishay Semiconductor is a company that specializes in the manufacturing of discrete semiconductors and passive components. They provide a wide range of products for various markets including automotive, industrial, computing, and telecommunications. -
Application Field
SIA447DJ-T1-GE3 is commonly used in automotive applications for LED lighting and in industrial applications for power management and lighting control. It is also used in consumer electronics for power management and lighting control in devices such as smartphones, tablets, and laptops. -
Package
The SIA447DJ-T1-GE3 chip is a dual N-channel MOSFET in a DFN (Dual Flat No-Lead) package. It has a form factor of a small square and comes in a size of 3mm x 3mm x 0.85mm.
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