ST STP11NM60FD

Points de pièce

• The STP11NM60FD is a power MOSFET chip produced by STMicroelectronics. It is designed for high power applications, such as motor control and power supplies. With a maximum drain current of 11A and a breakdown voltage of 600V, it offers efficient power switching capabilities. The chip features low on-resistance and gate charge, allowing for minimal power losses and improved efficiency.

• Equivalent

  Some equivalent products of the STP11NM60FD chip include IRFP260N, IRFP460N, IRF1404, and IRFB4110.

• Features

  The features of STP11NM60FD include a drain-source voltage of 600V, a continuous drain current of 11A, a low on-resistance of 0.65 ohms, a gate threshold voltage of 3V, a power dissipation of 68W, and a TO-220 full pack package.

• Pinout

  The STP11NM60FD is a MOSFET transistor. It has a pin count of 3, which include the gate (G), drain (D), and source (S). The functions of these pins are as follows: the gate controls the flow of current between the drain and source, the drain terminal allows current to flow in or out of the transistor, and the source is connected to the reference point for the current flow.

• Manufacturer

  STP11NM60FD is manufactured by STMicroelectronics, a multinational electronics and semiconductor company. It is one of the world's largest semiconductor chip manufacturers, with a focus on providing a wide range of integrated circuits and solutions for various industries, including automotive, industrial, personal electronics, and more.

• Application Field

  The STP11NM60FD is a high voltage N-channel Power MOSFET used in applications such as switch mode power supplies, lighting, motor control, and electric vehicle systems. It offers low on-resistance, high current capability, and reliable operation in high temperature environments.

• Package

  The STP11NM60FD chip is available in a TO-220 package type. It has a standard form and size as per the TO-220 package, which measures approximately 10.16 mm x 15.74 mm x 4.32 mm.