Commandes de plus de
$5000
SCT2H12NZGC11
17V operating voltage meets diverse project needs
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Marques: Rohm Semiconductor
Pièce Fabricant #: SCT2H12NZGC11
Fiche de données: SCT2H12NZGC11 Fiche de données (PDF)
Colis/Caisse: TO-3PFM-3
Statut RoHS:
État des stocks: 6 921 pièces, nouveau original
type de produit: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*Tous les prix sont en USD
Qté | Prix unitaire | Prix ext |
---|---|---|
1 | $3,725 | $3,725 |
10 | $3,555 | $35,550 |
30 | $3,454 | $103,620 |
100 | $3,352 | $335,200 |
500 | $3,305 | $1652,500 |
1000 | $3,284 | $3284,000 |
En stock: 6 921 PC
SCT2H12NZGC11 Description générale
The SCT2H12NZGC11 is a high-performance 1700V 3.7A N-channel SiC power MOSFET designed by ROHM Semiconductor. This Silicon Carbide MOSFET offers superior efficiency and reliability, making it ideal for various power electronics applications. To facilitate the evaluation and testing of the SCT2H12NZGC11, ROHM offers the BD7682FJ-LB-EVK-402 Evaluation Board. This evaluation board features the BD7682FJ-LB AC/DC Converter IC and is designed to accept an input voltage range of AC 400-690V, producing a stable 24V DC output. The board comes with comprehensive documentation, including an Application Note, Presentation Document, and Quick Start Guide to help users get started quickly and efficiently. Additionally, the Evaluation Board User Guide provides detailed instructions on how to properly set up and operate the evaluation board for accurate testing and performance assessment. For those interested in additional evaluation options, ROHM also offers the BD7682FJ-EVK-301 Evaluation Board, which supports input voltages of AC 210-480V and DC 300-900V, generating a 12V DC output. To learn more about these evaluation boards or to inquire about purchasing options, please reach out to our team for assistance
Caractéristiques
- Precision voltage regulation for stable operation
- High-power dissipation for demanding loads
- Limited current surge during turn-off
Caractéristiques
Paramètre | Valeur | Paramètre | Valeur |
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Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | SiC |
Mounting Style | Through Hole | Package / Case | TO-3PFM-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 1.7 kV | Id - Continuous Drain Current | 3.7 A |
Rds On - Drain-Source Resistance | 1.15 Ohms | Vgs - Gate-Source Voltage | - 6 V, + 22 V |
Vgs th - Gate-Source Threshold Voltage | 1.6 V | Qg - Gate Charge | 14 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 35 W | Channel Mode | Enhancement |
Series | SCT2x | Brand | ROHM Semiconductor |
Configuration | Single | Fall Time | 74 ns |
Forward Transconductance - Min | 0.4 s | Product | Power MOSFETs |
Product Type | MOSFET | Rise Time | 21 ns |
Factory Pack Quantity | 450 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | N-Channel SiC Power MOSFET |
Typical Turn-Off Delay Time | 35 ns | Typical Turn-On Delay Time | 16 ns |
Part # Aliases | SCT2H12NZ |
Expédition
Type d'expédition | Frais d'expédition | Délai de mise en œuvre | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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LA POSTE AÉRIENNE ENREGISTRÉE | $20.00-$40.00 (0.50 KG) | 2-5 jours |
Délai de traitement : les frais d'expédition dépendent des différentes zones et pays.
Paiement
Modalités de paiement | Frais de main | |
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Virement bancaire | facturer des frais bancaires de 30,00 $ US. |
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Pay Pal | facturer des frais de service de 4,0 %. |
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Carte de crédit | facturez des frais de service de 3,5%. |
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Western union | charge US.00 banking fee. |
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Paiement de Petit Montant | facturer des frais bancaires de 0,00 $ US. |
Garanties
1. Les composants électroniques que vous achetez incluent une garantie de 365 jours, nous garantissons la qualité du produit.
2. Si certains des articles que vous avez reçus ne sont pas de qualité parfaite, nous organiserons de manière responsable votre remboursement ou votre remplacement. Mais les articles doivent rester dans leur état d’origine.
Emballage
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Étape1 :Produit
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Étape2 :Emballage sous vide
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Étape3 :Sac antistatique
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Étape4 :Emballage individuel
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Étape5 :Boîtes d'emballage
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Étape6 :étiquette d'expédition à code-barres
Tous les produits seront emballés dans un sac antistatique. Expédié avec une protection antistatique ESD.
L'étiquette de l'emballage extérieur ESD utilisera les informations de notre société : numéro de pièce, marque et quantité.
Nous inspecterons toutes les marchandises avant expédition, garantirons que tous les produits sont en bon état et que les pièces sont neuves et correspondent à la fiche technique originale.
Une fois que toutes les marchandises sont garanties sans problème après l'emballage, nous les emballerons en toute sécurité et les enverrons par Global Express. Il présente une excellente résistance à la perforation et à la déchirure ainsi qu’une bonne intégrité du joint.
Points de pièce
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The SCT2H12NZGC11 is a high-performance power management integrated circuit (PMIC) designed for use in automotive applications. It features multiple voltage regulators, supervision functions, and diagnostic capabilities to ensure reliable operation in harsh environments. This chip is manufactured by Infineon Technologies, a leading provider of semiconductor solutions for automotive and industrial applications.
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Equivalent
The equivalent products of SCT2H12NZGC11 chip are X9SCT2H52NZGC11, SCT2H52NZGC11, and SCT2H102NZGC11. These chips have similar specifications and functionalities, providing customers with a range of options for their specific needs. -
Features
SCT2H12NZGC11 is a high voltage silicon carbide Schottky diode designed for use in high-power applications. It has a forward voltage of 1.7V, a maximum continuous forward current of 20A, and a reverse recovery time of 20ns. The diode operates at temperatures up to 175°C and is RoHS compliant. -
Pinout
The SCT2H12NZGC11 has a pin count of 11. It is a high-speed switching diode with a forward current of 2A and a reverse voltage of 20V. It is commonly used in applications such as RF and switching circuits. -
Manufacturer
SCT2H12NZGC11 is manufactured by Infineon Technologies AG, a German multinational semiconductor manufacturer. Infineon specializes in producing power semiconductors, sensor systems, and microcontrollers for automotive, industrial, and renewable energy applications. -
Application Field
SCT2H12NZGC11 is commonly used in industrial automation, robotics, and automotive applications. Its compact size, high precision, and reliability make it suitable for applications requiring accurate position sensing, such as servo motors, encoders, and linear actuators. -
Package
The SCT2H12NZGC11 chip is a high-power, high-gain RF transistor in a ceramic package. It has a form factor of a flange-mount and measures 8.1 x 6.1 x 2.3 mm in size.
Nous fournissons des produits de haute qualité, un service attentionné et une garantie après-vente
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Nous avons des produits riches, pouvons répondre à vos différents besoins.
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La quantité minimum de commande commence à partir de 1 pièce.
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Les frais d'expédition internationaux les plus bas commencent à partir de 0,00 $
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Garantie de qualité de 365 jours pour tous les produits