Microchip TP0610T

TP0610T Description générale

The TP0610T is a low threshold, enhancement-mode transistor that incorporates a vertical DMOS structure and well-established silicon-gate manufacturing process. This unique combination ensures that the device possesses the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices. Furthermore, as with all MOS structures, the TP0610T is immune to thermal runaway and thermally-induced secondary breakdown. These features make the vertical DMOS FETs an excellent choice for a wide range of switching and amplifying applications, particularly those requiring very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds

Caractéristiques

• Excellent voltage regulation performance
• Compact size with high reliability
• Low power consumption and noise

Caractéristiques

Paramètre	Valeur	Paramètre	Valeur
Manufacturer	Microchip	Product Category	MOSFET
RoHS	N	Technology	Si
Mounting Style	SMD/SMT	Package / Case	SOT-23-3
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	120 mA
Rds On - Drain-Source Resistance	10 Ohms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	360 mW	Channel Mode	Enhancement
Brand	Microchip Technology	Configuration	Single
Fall Time	15 ns	Height	0.93 mm
Length	2.92 mm	Product	MOSFET Small Signals
Product Type	MOSFET	Rise Time	15 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Type	FET
Typical Turn-Off Delay Time	15 ns	Typical Turn-On Delay Time	10 ns
Width	1.3 mm