Commandes de plus de
$5000
ON FDB33N25TM
D2PAK-packaged Power MOSFET with N-Channel configuration and UniFETTM technology
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Marques: Onsemi
Pièce Fabricant #: FDB33N25TM
Fiche de données: FDB33N25TM Datasheet (PDF)
Colis/Caisse: D2PAK-3
Statut RoHS:
État des stocks: 2 161 pièces, nouveau original
type de produit: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*Tous les prix sont en USD
Qté | Prix unitaire | Prix ext |
---|---|---|
1 | $1,804 | $1,804 |
10 | $1,552 | $15,520 |
30 | $1,396 | $41,880 |
100 | $1,236 | $123,600 |
500 | $1,099 | $549,500 |
800 | $1,068 | $854,400 |
En stock: 2 161 PC
FDB33N25TM Description générale
UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
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Caractéristiques
Type: N-Channel MOSFET
Voltage Rating (VDS): 250 volts
Current Rating (ID): 33 amperes
RDS(on) (On-State Resistance): This value indicates the resistance between the drain and source when the MOSFET is in the "on" state.
Package: TO-263 (also known as D²PAK or DDPAK) which is a surface-mount package.
Gate Threshold Voltage (VGS(th)): The voltage at which the MOSFET begins to turn on.
Application
- This product is general usage and suitable for many different applications.
Caractéristiques
Paramètre | Valeur | Paramètre | Valeur |
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Product Name | FDB33N25TM | Product Type | Power MOSFET |
Manufacturer | ON Semiconductor | Transistor Type | N-Channel |
Drain-Source Voltage (Vdss) | 250V | Continuous Drain Current (Id) | 33A |
Rds(on) (On-Resistance) | 0.095 ohms (max) | Gate-Source Threshold Voltage (Vgs(th)) | 2V (max) |
Operating Temperature Range | -55°C to +175°C | Package / Case | TO-263 (D2PAK) |
Packaging | Tape & Reel, Tube, and other options | feature-category | Power MOSFET |
feature-material | feature-process-technology | UniFET | |
feature-configuration | Single | feature-channel-mode | Enhancement |
feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
feature-maximum-drain-source-voltage-v | 250 | feature-maximum-gate-source-voltage-v | ±30 |
feature-maximum-gate-threshold-voltage-v | 5 | feature-maximum-continuous-drain-current-a | 33 |
feature-maximum-drain-source-resistance-mohm | 94@10V | feature-typical-gate-charge-vgs-nc | 36.8@10V |
feature-typical-gate-charge-10v-nc | 36.8 | feature-typical-input-capacitance-vds-pf | 1640@25V |
feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 235000 | |
feature-packaging | Tape and Reel | feature-rad-hard | |
feature-pin-count | 3 | feature-supplier-package | D2PAK |
feature-standard-package-name1 | TO-263 | feature-cecc-qualified | No |
feature-esd-protection | feature-military | No | |
feature-aec-qualified | No | feature-aec-qualified-number | |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc | Yes |
feature-svhc-exceeds-threshold | Yes | Series | UniFET™ |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 250 V |
Current - Continuous Drain (Id) @ 25°C | 33A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 94mOhm @ 16.5A, 10V | Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V | Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 2135 pF @ 25 V | Power Dissipation (Max) | 235W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Supplier Device Package | TO-263 (D2PAK) |
Expédition
Type d'expédition | Frais d'expédition | Délai de mise en œuvre | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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LA POSTE AÉRIENNE ENREGISTRÉE | $20.00-$40.00 (0.50 KG) | 2-5 jours |
Délai de traitement : les frais d'expédition dépendent des différentes zones et pays.
Paiement
Modalités de paiement | Frais de main | |
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Virement bancaire | facturer des frais bancaires de 30,00 $ US. |
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Pay Pal | facturer des frais de service de 4,0 %. |
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Carte de crédit | facturez des frais de service de 3,5%. |
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Western union | charge US.00 banking fee. |
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Paiement de Petit Montant | facturer des frais bancaires de 0,00 $ US. |
Garanties
1. Les composants électroniques que vous achetez incluent une garantie de 365 jours, nous garantissons la qualité du produit.
2. Si certains des articles que vous avez reçus ne sont pas de qualité parfaite, nous organiserons de manière responsable votre remboursement ou votre remplacement. Mais les articles doivent rester dans leur état d’origine.
Emballage
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Étape1 :Produit
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Étape2 :Emballage sous vide
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Étape3 :Sac antistatique
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Étape4 :Emballage individuel
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Étape5 :Boîtes d'emballage
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Étape6 :étiquette d'expédition à code-barres
Tous les produits seront emballés dans un sac antistatique. Expédié avec une protection antistatique ESD.
L'étiquette de l'emballage extérieur ESD utilisera les informations de notre société : numéro de pièce, marque et quantité.
Nous inspecterons toutes les marchandises avant expédition, garantirons que tous les produits sont en bon état et que les pièces sont neuves et correspondent à la fiche technique originale.
Une fois que toutes les marchandises sont garanties sans problème après l'emballage, nous les emballerons en toute sécurité et les enverrons par Global Express. Il présente une excellente résistance à la perforation et à la déchirure ainsi qu’une bonne intégrité du joint.
Points de pièce
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The FDB33N25TM is a power MOSFET chip used in various electronic applications. It is designed to handle high currents and voltage levels, making it suitable for power management, motor control, and switching applications. The chip features low on-resistance, fast switching characteristics, and high reliability. It is commonly used in industrial and automotive systems where efficient power handling is critical.
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Equivalent
There are no direct equivalent products for the FDB33N25TM chip as it is a unique component. However, you may consider looking at other N-channel MOSFET chips with similar voltage and current ratings from manufacturers such as Infineon, Texas Instruments, Vishay, or ON Semiconductor. -
Features
The FDB33N25TM is a power MOSFET transistor with a VDS rating of 250V, a continuous drain current of 33A, and a low on-resistance of 0.041Ω. It is designed for high power applications with high efficiency and can handle large current flows. -
Pinout
The FDB33N25TM is a MOSFET transistor with a TO-263 package. It has three pins: gate, drain, and source. The gate pin controls the flow of current between the drain and source pins. -
Manufacturer
The manufacturer of the FDB33N25TM is Fairchild Semiconductor. It is a global company that specializes in the design, development, and production of power semiconductor devices and integrated circuits in various industries such as automotive, consumer electronics, industrial, and more. -
Application Field
The FDB33N25TM is a power MOSFET transistor commonly used in various applications such as switching power supplies, motor control, and power management in electronics. It is particularly well-suited for high-voltage and high-power applications where efficiency and reliability are important factors. -
Package
The FDB33N25TM chip has the TO-263 package type, a VDSS form, and a size of 10.16mm x 7.49mm.
Fiche de données PDF
Nous fournissons des produits de haute qualité, un service attentionné et une garantie après-vente
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Nous avons des produits riches, pouvons répondre à vos différents besoins.
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La quantité minimum de commande commence à partir de 1 pièce.
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Les frais d'expédition internationaux les plus bas commencent à partir de 0,00 $
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Garantie de qualité de 365 jours pour tous les produits
Exceptional customer service and high-quality components. Very satisfied.