Commandes de plus de
$5000ON FDG6321C
Mosfet Array 25V 500mA, 410mA 300mW Surface Mount SC-88 (SC-70-6)
Marques: ON Semiconductor, LLC
Pièce Fabricant #: FDG6321C
Fiche de données: FDG6321C Datasheet (PDF)
Colis/Caisse: SC-70-6
Statut RoHS:
État des stocks: 2 264 pièces, nouveau original
type de produit: FET, MOSFET Arrays
Warranty: 1 Year Ovaga Warranty - Find Out More
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*Tous les prix sont en USD
Qté | Prix unitaire | Prix ext |
---|---|---|
1 | $0,393 | $0,393 |
10 | $0,306 | $3,060 |
30 | $0,267 | $8,010 |
100 | $0,220 | $22,000 |
500 | $0,200 | $100,000 |
1000 | $0,186 | $186,000 |
En stock: 2 264 PC
FDG6321C Description générale
The FDG6321C is a dual N/P channel Mosfet designed for high performance in small form factor applications. With a drain source voltage of 25V for both N and P channels, this Mosfet is versatile and can be used in a variety of circuit designs. Its complementary N and P channel type allows for efficient use in both high and low side switch applications. With a continuous drain current of 500mA for the N channel, the FDG6321C can handle moderate power loads with ease. This 6-pin Sc-70 package is RoHS compliant, making it suitable for use in applications where environmental standards must be met
Caractéristiques
- Fault Tolerant Operation
- High Isolation Voltage
- Thermal Overload Protection
- Elastomeric Pin Connection
Application
- Great for everyday use.
- Works well in various settings.
- Perfect for all kinds of tasks.
Caractéristiques
Paramètre | Valeur | Paramètre | Valeur |
---|---|---|---|
Source Content uid | FDG6321C | Pbfree Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
Package Description | SC-70, 6 PIN | Manufacturer Package Code | 419B-02 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Factory Lead Time | 4 Weeks | Samacsys Manufacturer | onsemi |
Additional Feature | LOGIC LEVEL COMPATIBLE | Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 25 V | Drain Current-Max (ID) | 0.5 A |
Drain-source On Resistance-Max | 0.45 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PDSO-G6 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 2 |
Number of Terminals | 6 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
Power Dissipation-Max (Abs) | 0.3 W | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | Matte Tin (Sn) - annealed |
Terminal Form | GULL WING | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | feature-category | Power MOSFET |
feature-material | feature-process-technology | DMOS | |
feature-configuration | Dual | feature-channel-mode | Enhancement |
feature-channel-type | N|P | feature-number-of-elements-per-chip | 2 |
feature-maximum-drain-source-voltage-v | 25 | feature-maximum-gate-source-voltage-v | 8@N Channel|-8@P Channel |
feature-maximum-gate-threshold-voltage-v | feature-maximum-continuous-drain-current-a | 0.5@N Channel|0.41@P Channel | |
feature-maximum-drain-source-resistance-mohm | [email protected]@N Channel|[email protected]@P Channel | feature-typical-gate-charge-vgs-nc | [email protected]@N Channel|[email protected]@P Channel |
feature-typical-gate-charge-10v-nc | feature-typical-input-capacitance-vds-pf | 62@10V@P Channel|50@10V@N Channel | |
feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 300 | |
feature-packaging | Tape and Reel | feature-rad-hard | |
feature-pin-count | 6 | feature-supplier-package | SC-88 |
feature-standard-package-name1 | SOT | feature-cecc-qualified | No |
feature-esd-protection | Yes | feature-military | No |
feature-aec-qualified | No | feature-aec-qualified-number | |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc | No |
feature-svhc-exceeds-threshold | No |
Expédition
Type d'expédition | Frais d'expédition | Délai de mise en œuvre | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 jours | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 jours | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 jours | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 jours | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 jours | |
LA POSTE AÉRIENNE ENREGISTRÉE | $20.00-$40.00 (0.50 KG) | 2-5 jours |
Délai de traitement : les frais d'expédition dépendent des différentes zones et pays.
Paiement
Modalités de paiement | Frais de main | |
---|---|---|
Virement bancaire | facturer des frais bancaires de 30,00 $ US. | |
Pay Pal | facturer des frais de service de 4,0 %. | |
Carte de crédit | facturez des frais de service de 3,5%. | |
Western union | charge US.00 banking fee. | |
Paiement de Petit Montant | facturer des frais bancaires de 0,00 $ US. |
Garanties
1. Les composants électroniques que vous achetez incluent une garantie de 365 jours, nous garantissons la qualité du produit.
2. Si certains des articles que vous avez reçus ne sont pas de qualité parfaite, nous organiserons de manière responsable votre remboursement ou votre remplacement. Mais les articles doivent rester dans leur état d’origine.
Emballage
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Étape1 :Produit
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Étape2 :Emballage sous vide
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Étape3 :Sac antistatique
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Étape4 :Emballage individuel
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Étape5 :Boîtes d'emballage
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Étape6 :étiquette d'expédition à code-barres
Tous les produits seront emballés dans un sac antistatique. Expédié avec une protection antistatique ESD.
L'étiquette de l'emballage extérieur ESD utilisera les informations de notre société : numéro de pièce, marque et quantité.
Nous inspecterons toutes les marchandises avant expédition, garantirons que tous les produits sont en bon état et que les pièces sont neuves et correspondent à la fiche technique originale.
Une fois que toutes les marchandises sont garanties sans problème après l'emballage, nous les emballerons en toute sécurité et les enverrons par Global Express. Il présente une excellente résistance à la perforation et à la déchirure ainsi qu’une bonne intégrité du joint.
Points de pièce
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The FDG6321C is a high-performance, logic-level, ultra-low RDSon power MOSFET chip designed for use in a variety of applications, including power management and battery protection. It features a compact size, low on-state resistance, and fast switching speeds, making it ideal for applications requiring high efficiency and reliability.
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Equivalent
The equivalent products of FDG6321C chip are FDG6311N, FDG6311P, FDG6312N, and FDG6312P. These are N-channel and P-channel MOSFETs specifically designed for switching applications in portable devices and power management circuits. -
Features
FDG6321C is a 77 GHz Automotive Radar Transceiver with integrated FMCW chirp generator. It features high-resolution radar sensor technology with four receive channels and one transmit channel, enabling range, speed, and angle measurements for various automotive applications like adaptive cruise control, blind spot detection, and lane change assist. -
Pinout
The FDG6321C is a dual N-channel digital transistor with a pin count of 6. Pin 1 is the emitter of transistor 1, Pin 2 is the base of transistor 1, Pin 3 is the collector of transistor 1, Pin 4 is the emitter of transistor 2, Pin 5 is the base of transistor 2, and Pin 6 is the collector of transistor 2. -
Manufacturer
FDG6321C is manufactured by Delta Electronics, Inc. It is a multinational company that specializes in power and thermal management solutions, including power supplies, industrial automation, and electronic components. Delta Electronics has a wide range of products and services catering to various industries such as renewable energy, telecommunications, and healthcare. -
Application Field
FDG6321C is typically used in high performance liquid chromatography (HPLC) applications as a stationary phase for separation of complex mixtures, such as peptides and proteins. It is commonly used in research, pharmaceutical, and biotechnology industries for analyzing and quantifying biomolecules in samples. -
Package
The FDG6321C chip comes in a surface mount package type called DFN-8 and has a form factor of 2mm x 2mm. It is a dual N-channel 2.5V logic level enhancement mode field-effect transistor with a maximum rating of 115mA continuous drain current.
Fiche de données PDF
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Nous avons des produits riches, pouvons répondre à vos différents besoins.
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La quantité minimum de commande commence à partir de 1 pièce.
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Les frais d'expédition internationaux les plus bas commencent à partir de 0,00 $
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Garantie de qualité de 365 jours pour tous les produits
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