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$5000ON NTHD3101FT1G
P-Channel ChipFET™ Power MOSFET and Schottky Diode -20V -4.4A 80mΩ
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Marques: ON Semiconductor, LLC
Pièce Fabricant #: NTHD3101FT1G
Fiche de données: NTHD3101FT1G Datasheet (PDF)
Colis/Caisse: ChipFET-8
type de produit: Single FETs, MOSFETs
Statut RoHS:
État des stocks: 2 546 pièces, nouveau original
Warranty: 1 Year Ovaga Warranty - Find Out More
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NTHD3101FT1G Description générale
Meet the NTHD3101FT1G, a high-performance P-channel MOSFET designed for precision power management in demanding applications. With a continuous drain current rating of -3.2A and a maximum drain-source voltage of -20V, this MOSFET offers exceptional efficiency and reliability for your circuit designs. Its low on-resistance of 0.064ohm and threshold voltage of -1.5V ensure accurate control of current flow, while the chipFET-8 package style with 8 pins simplifies integration into your PCB layout. Operating at temperatures up to 150°C, the NTHD3101FT1G can withstand harsh environmental conditions with ease. Choose this automotive-qualified MOSFET for dependable performance and long-term durability in your electronic systems
Caractéristiques
- This device features high speed and low noise.
- It offers fast switching times and high efficiency.
- NTHD3 101FT 1G is suitable for high power applications.
- The MOSFET has a high current rating and low RDS(on).
Application
- Energy-efficient solutions
- High-speed switching technology
- Integrated circuit design
Caractéristiques
Paramètre | Valeur | Paramètre | Valeur |
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Status | Last Shipments | CAD Models | |
Compliance | PbAHP | Package Type | ChipFET-8 |
Case Outline | 1206A-03 | MSL Type | 1 |
MSL Temp (°C) | 260 | Container Type | REEL |
Container Qty. | 3000 | ON Target | N |
Channel Polarity | P-Channel | Configuration | with Schottky Diode |
V(BR)DSS Min (V) | -20 | VGS Max (V) | 8 |
VGS(th) Max (V) | 1.5 | ID Max (A) | 3.2 |
PD Max (W) | 1.1 | RDS(on) Max @ VGS = 2.5 V (mΩ) | 85 |
RDS(on) Max @ VGS = 4.5 V (mΩ) | 64 | RDS(on) Max @ VGS = 10 V (mΩ) | - |
Qg Typ @ VGS = 4.5 V (nC) | 8.6 | Qg Typ @ VGS = 10 V (nC) | 7.4 |
Ciss Typ (pF) | 680 | Pricing ($/Unit) | Price N/A |
Case/Package | SMD/SMT | Contact Plating | Tin |
Number of Pins | 8 | Weight | 4.535924 g |
Continuous Drain Current (ID) | 3.2 A | Current Rating | -3.2 A |
Drain to Source Breakdown Voltage | -20 V | Drain to Source Resistance | 64 mΩ |
Drain to Source Voltage (Vdss) | 20 V | Fall Time | 12.4 ns |
Gate to Source Voltage (Vgs) | 8 V | Input Capacitance | 680 pF |
Max Operating Temperature | 150 °C | Max Power Dissipation | 1.1 W |
Min Operating Temperature | -55 °C | Nominal Vgs | -450 mV |
Number of Elements | 1 | Packaging | Tape and Reel |
Power Dissipation | 1.1 W | Rds On Max | 80 mΩ |
Resistance | 64 MΩ | Rise Time | 11.7 ns |
Schedule B | 8541290080 | Threshold Voltage | -1.5 V |
Turn-Off Delay Time | 16 ns | Turn-On Delay Time | 5.8 ns |
Voltage Rating (DC) | -20 V | Height | 1.05 mm |
Length | 3.05 mm |
Expédition
Type d'expédition | Frais d'expédition | Délai de mise en œuvre | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 jours |
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LA POSTE AÉRIENNE ENREGISTRÉE | $20.00-$40.00 (0.50 KG) | 2-5 jours |
Délai de traitement : les frais d'expédition dépendent des différentes zones et pays.
Paiement
Modalités de paiement | Frais de main | |
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Virement bancaire | facturer des frais bancaires de 30,00 $ US. |
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Pay Pal | facturer des frais de service de 4,0 %. |
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Carte de crédit | facturez des frais de service de 3,5%. |
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Western union | charge US.00 banking fee. |
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Paiement de Petit Montant | facturer des frais bancaires de 0,00 $ US. |
Garanties
1. Les composants électroniques que vous achetez incluent une garantie de 365 jours, nous garantissons la qualité du produit.
2. Si certains des articles que vous avez reçus ne sont pas de qualité parfaite, nous organiserons de manière responsable votre remboursement ou votre remplacement. Mais les articles doivent rester dans leur état d’origine.
Emballage
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Étape1 :Produit
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Étape2 :Emballage sous vide
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Étape3 :Sac antistatique
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Étape4 :Emballage individuel
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Étape5 :Boîtes d'emballage
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Étape6 :étiquette d'expédition à code-barres
Tous les produits seront emballés dans un sac antistatique. Expédié avec une protection antistatique ESD.
L'étiquette de l'emballage extérieur ESD utilisera les informations de notre société : numéro de pièce, marque et quantité.
Nous inspecterons toutes les marchandises avant expédition, garantirons que tous les produits sont en bon état et que les pièces sont neuves et correspondent à la fiche technique originale.
Une fois que toutes les marchandises sont garanties sans problème après l'emballage, nous les emballerons en toute sécurité et les enverrons par Global Express. Il présente une excellente résistance à la perforation et à la déchirure ainsi qu’une bonne intégrité du joint.
Points de pièce
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The NTHD3101FT1G is a dual N-channel, high-speed power MOSFET chip designed for high-speed switching applications in power management and control circuits. It features a low gate charge and fast switching speed, making it ideal for use in power supplies, motor controls, and lighting applications.
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Equivalent
Some equivalent products of NTHD3101FT1G chip include AON6504, BUK7Y20-40E, and SUP53P06-20. These chips are also MOSFET transistors with similar specifications including voltage and current ratings. It is recommended to consult the datasheets of these chips for more detailed information and to ensure compatibility with your specific application. -
Features
NTHD3101FT1G is a high-speed, low input current diode with low capacitance and a low forward voltage drop. It is suitable for high-speed switching applications and has a unique, ultra-low profile packaging design for space-constrained applications. -
Pinout
The NTHD3101FT1G is a dual N-channel power MOSFET with a pin count of 6. Pin functions include Gate (1 and 4), Drain (3 and 6), and Source (2 and 5). This device is commonly used in high current switching applications. -
Manufacturer
The NTHD3101FT1G is manufactured by ON Semiconductor, which is a leading supplier of power management and analog semiconductor solutions. ON Semiconductor is a multinational company that provides a wide range of products for automotive, industrial, and consumer applications. They specialize in designing and manufacturing high-performance components for various industries worldwide. -
Application Field
The NTHD3101FT1G is commonly used in applications involving high-speed switching such as data communication, optical networking, and radar systems. Its low on-state resistance, low gate charge, and high breakdown voltage make it ideal for power management and protection circuits in these systems. -
Package
The NTHD3101FT1G chip is housed in a surface-mount DPAK package with a TO-252 form, measuring approximately 6.6mm x 6.2mm.
Fiche de données PDF
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