ON HUF75344G3
N-Channel 55 V 75A (Tc) 285W (Tc) Through Hole TO-247-3
Marques: ON Semiconductor, LLC
Pièce Fabricant #: HUF75344G3
Fiche de données: HUF75344G3 Datasheet (PDF)
Colis/Caisse: TO-247
type de produit: Transistors
Statut RoHS:
État des stocks: 2893 pièces, nouveau original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Ajouter à la nomenclatureHUF75344G3 Description générale
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75344.
Caractéristiques
- 75A, 55V
- Simulation Models
- Temperature Compensated PSPICE® and SABER™Models
- Thermal Impedance PSPICE and SABER Models
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334, “Guidelines for Soldering Surface MountComponents to PC Boards”
Application
- Other Audio & Video
Caractéristiques
Paramètre | Valeur | Paramètre | Valeur |
---|---|---|---|
Manufacturer: | onsemi | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | Through Hole | Package / Case: | TO-247-3 |
Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 55 V | Id - Continuous Drain Current: | 75 A |
Rds On - Drain-Source Resistance: | 8 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V | Qg - Gate Charge: | 210 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 285 W | Channel Mode: | Enhancement |
Tradename: | UltraFET | Series: | HUF75344G3 |
Packaging: | Tube | Brand: | onsemi / Fairchild |
Configuration: | Single | Fall Time: | 57 ns |
Height: | 20.82 mm | Length: | 15.87 mm |
Product Type: | MOSFET | Rise Time: | 125 ns |
Factory Pack Quantity: | 450 | Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel | Type: | MOSFET |
Typical Turn-Off Delay Time: | 46 ns | Typical Turn-On Delay Time: | 13 ns |
Width: | 4.82 mm | Part # Aliases: | HUF75344G3_NL |
Unit Weight: | 0.211644 oz | feature-category | Power MOSFET |
feature-material | Si | feature-process-technology | UltraFET |
feature-configuration | Single | feature-channel-mode | Enhancement |
feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
feature-maximum-drain-source-voltage-v | 55 | feature-maximum-gate-source-voltage-v | ±20 |
feature-maximum-gate-threshold-voltage-v | 4 | feature-maximum-continuous-drain-current-a | 75 |
feature-maximum-drain-source-resistance-mohm | 8@10V | feature-typical-gate-charge-vgs-nc | 175@20V |
feature-typical-gate-charge-10v-nc | feature-typical-input-capacitance-vds-pf | 3200@25V | |
feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 285000 | |
feature-packaging | Tube | feature-rad-hard | |
feature-pin-count | 3 | feature-supplier-package | TO-247 |
feature-standard-package-name1 | TO | feature-cecc-qualified | No |
feature-esd-protection | feature-military | No | |
feature-aec-qualified | No | feature-aec-qualified-number | |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc | Yes |
feature-svhc-exceeds-threshold | Yes |
Expédition
Type d'expédition | Frais d'expédition | Délai de mise en œuvre | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 jours | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 jours | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 jours | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 jours | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 jours | |
LA POSTE AÉRIENNE ENREGISTRÉE | $20.00-$40.00 (0.50 KG) | 2-5 jours |
Délai de traitement : les frais d'expédition dépendent des différentes zones et pays.
Paiement
Modalités de paiement | Frais de main | |
---|---|---|
Virement bancaire | facturer des frais bancaires de 30,00 $ US. | |
Pay Pal | facturer des frais de service de 4,0 %. | |
Carte de crédit | facturez des frais de service de 3,5%. | |
Western union | charge US.00 banking fee. | |
Paiement de Petit Montant | facturer des frais bancaires de 0,00 $ US. |
Garanties
1. Les composants électroniques que vous achetez incluent une garantie de 365 jours, nous garantissons la qualité du produit.
2. Si certains des articles que vous avez reçus ne sont pas de qualité parfaite, nous organiserons de manière responsable votre remboursement ou votre remplacement. Mais les articles doivent rester dans leur état d’origine.
Emballage
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Étape1 :Produit
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Étape2 :Emballage sous vide
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Étape3 :Sac antistatique
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Étape4 :Emballage individuel
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Étape5 :Boîtes d'emballage
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Étape6 :étiquette d'expédition à code-barres
Tous les produits seront emballés dans un sac antistatique. Expédié avec une protection antistatique ESD.
L'étiquette de l'emballage extérieur ESD utilisera les informations de notre société : numéro de pièce, marque et quantité.
Nous inspecterons toutes les marchandises avant expédition, garantirons que tous les produits sont en bon état et que les pièces sont neuves et correspondent à la fiche technique originale.
Une fois que toutes les marchandises sont garanties sans problème après l'emballage, nous les emballerons en toute sécurité et les enverrons par Global Express. Il présente une excellente résistance à la perforation et à la déchirure ainsi qu’une bonne intégrité du joint.
Points de pièce
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The HUF75344G3 is a power MOSFET chip utilized in electronic devices for controlling and switching high current loads. It is designed to handle high voltage and current levels efficiently, serving as a reliable component in various applications such as power supplies, motor control circuits, and automotive systems. The chip's advanced features make it an integral part of electronic designs requiring robust and efficient power management.
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Features
The HUF75344G3 is a high-voltage MOSFET transistor with a low on-resistance and fast switching speed. It has a drain-source voltage rating of 55V and a continuous drain current of 75A. The transistor is designed for use in power conversion and motor control applications. -
Pinout
The HUF75344G3 is a power MOSFET with a pin count of 8. It is designed for low on-resistance and fast switching. The pin functions typically include gate, source, and drain connections for controlling the flow of current in a circuit. -
Manufacturer
The manufacturer of the HUF75344G3 is Infineon Technologies. It is a global semiconductor company that designs, manufactures, and markets a wide range of electronic components and systems. -
Application Field
The HUF75344G3 is a high voltage MOSFET that is commonly used in applications such as power supplies, motor control, lighting, and switching circuits. It can handle high voltage and current levels, making it suitable for various industrial and automotive applications. -
Package
The HUF75344G3 chip has a package type of TO-247, a form of N-Channel, and a size of 8.65mm x 19.3mm.
Fiche de données PDF
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