ON HUF75339P3
N-Channel 55 V 75A (Tc) 200W (Tc) Through Hole TO-220-3
Marques: ON Semiconductor, LLC
Pièce Fabricant #: HUF75339P3
Fiche de données: HUF75339P3 Datasheet (PDF)
Colis/Caisse: TO-220
type de produit: Transistors
Statut RoHS:
État des stocks: 2229 pièces, nouveau original
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
Ajouter à la nomenclatureHUF75339P3 Description générale
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
Formerly developmental type TA75339.
Caractéristiques
- 75A, 55V
- SPICE and SABER Thermal Impedance Models
- Temperature Compensated PSPICE® and SABER™ Models
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
Application
- AC-DC Merchant Power Supply - Servers & Workstations
- Workstation
- Server & Mainframe
Caractéristiques
Paramètre | Valeur | Paramètre | Valeur |
---|---|---|---|
Manufacturer: | onsemi | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | Through Hole | Package / Case: | TO-220-3 |
Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 55 V | Id - Continuous Drain Current: | 75 A |
Rds On - Drain-Source Resistance: | 12 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V | Qg - Gate Charge: | 130 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 200 W | Channel Mode: | Enhancement |
Tradename: | UltraFET | Series: | HUF75339P3 |
Packaging: | Tube | Brand: | onsemi / Fairchild |
Configuration: | Single | Fall Time: | 25 ns |
Height: | 16.3 mm | Length: | 10.67 mm |
Product Type: | MOSFET | Rise Time: | 60 ns |
Factory Pack Quantity: | 50 | Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel | Type: | MOSFET |
Typical Turn-Off Delay Time: | 20 ns | Typical Turn-On Delay Time: | 15 ns |
Width: | 4.7 mm | Part # Aliases: | HUF75339P3_NL |
Unit Weight: | 0.068784 oz | feature-category | Power MOSFET |
feature-material | Si | feature-process-technology | UltraFET |
feature-configuration | Single | feature-channel-mode | Enhancement |
feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
feature-maximum-drain-source-voltage-v | 55 | feature-maximum-gate-source-voltage-v | ±20 |
feature-maximum-gate-threshold-voltage-v | 4 | feature-maximum-continuous-drain-current-a | 75 |
feature-maximum-drain-source-resistance-mohm | 12@10V | feature-typical-gate-charge-vgs-nc | 110@20V |
feature-typical-gate-charge-10v-nc | feature-typical-input-capacitance-vds-pf | 2000@25V | |
feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 200000 | |
feature-packaging | Tube | feature-rad-hard | |
feature-pin-count | 3 | feature-supplier-package | TO-220 |
feature-standard-package-name1 | TO | feature-cecc-qualified | No |
feature-esd-protection | feature-military | No | |
feature-aec-qualified | No | feature-aec-qualified-number | |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc | Yes |
feature-svhc-exceeds-threshold | No |
Expédition
Type d'expédition | Frais d'expédition | Délai de mise en œuvre | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 jours | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 jours | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 jours | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 jours | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 jours | |
LA POSTE AÉRIENNE ENREGISTRÉE | $20.00-$40.00 (0.50 KG) | 2-5 jours |
Délai de traitement : les frais d'expédition dépendent des différentes zones et pays.
Paiement
Modalités de paiement | Frais de main | |
---|---|---|
Virement bancaire | facturer des frais bancaires de 30,00 $ US. | |
Pay Pal | facturer des frais de service de 4,0 %. | |
Carte de crédit | facturez des frais de service de 3,5%. | |
Western union | charge US.00 banking fee. | |
Paiement de Petit Montant | facturer des frais bancaires de 0,00 $ US. |
Garanties
1. Les composants électroniques que vous achetez incluent une garantie de 365 jours, nous garantissons la qualité du produit.
2. Si certains des articles que vous avez reçus ne sont pas de qualité parfaite, nous organiserons de manière responsable votre remboursement ou votre remplacement. Mais les articles doivent rester dans leur état d’origine.
Emballage
-
Étape1 :Produit
-
Étape2 :Emballage sous vide
-
Étape3 :Sac antistatique
-
Étape4 :Emballage individuel
-
Étape5 :Boîtes d'emballage
-
Étape6 :étiquette d'expédition à code-barres
Tous les produits seront emballés dans un sac antistatique. Expédié avec une protection antistatique ESD.
L'étiquette de l'emballage extérieur ESD utilisera les informations de notre société : numéro de pièce, marque et quantité.
Nous inspecterons toutes les marchandises avant expédition, garantirons que tous les produits sont en bon état et que les pièces sont neuves et correspondent à la fiche technique originale.
Une fois que toutes les marchandises sont garanties sans problème après l'emballage, nous les emballerons en toute sécurité et les enverrons par Global Express. Il présente une excellente résistance à la perforation et à la déchirure ainsi qu’une bonne intégrité du joint.
Points de pièce
-
The HUF75339P3 is a power MOSFET chip designed for high-current applications. It provides low ON-resistance and high switching speed, making it suitable for power management and motor control circuits. The chip can handle high levels of current while minimizing power dissipation and temperature rise. Its compact size and robust construction make it an efficient choice for various electronic devices and systems.
-
Features
The HUF75339P3 is a N-channel MOSFET transistor with a drain-source voltage (VDS) of 55V, a continuous drain current (ID) of 75A, and a low on-resistance (RDS(on)) of 3.9mΩ. It features a compact and space-saving package, making it suitable for various applications in power electronics such as motor control, power supplies, and inverters. -
Pinout
The HUF75339P3 is a power MOSFET transistor. It has a pin count of 3. The three pins are G (gate), D (drain), and S (source), which are used for controlling the flow of current in a circuit. -
Manufacturer
The manufacturer of the HUF75339P3 is ON Semiconductor. It is a global semiconductor supplier, providing a comprehensive portfolio of energy-efficient, easy-to-use products that help customers solve their unique design challenges across a wide range of applications. -
Application Field
The HUF75339P3 is a MOSFET transistor that is commonly used in automotive applications such as powertrain control, electric power steering, and ignition systems. It can also be used in industrial applications that require high power switching capability, such as motor control and battery charging systems. -
Package
The package type of the HUF75339P3 chip is TO-220, its form is through-hole, and the size is approximately 10.16mm x 15.87mm.
Fiche de données PDF
Nous fournissons des produits de haute qualité, un service attentionné et une garantie après-vente
-
Nous avons des produits riches, pouvons répondre à vos différents besoins.
-
La quantité minimum de commande commence à partir de 1 pièce.
-
Les frais d'expédition internationaux les plus bas commencent à partir de 0,00 $
-
Garantie de qualité de 365 jours pour tous les produits
The components we receive from Ovaga are always of the highest quality. Their prices are reasonable and their shipping is quick.