IXFP3N120

Points de pièce

• The IXFP3N120 is a power MOSFET chip widely used for high voltage and high current applications. It features a 1200V drain-source voltage rating and a maximum continuous drain current of 3A. The chip is designed for efficient power switching in areas such as motor control, power supplies, and inverters. Its compact size and robust performance make it a popular choice among designers for various industrial and consumer electronic applications.

• Equivalent

  The equivalent products of the IXFP3N120 chip are the IPP051N12N3GXKSA1 and the BSM251N12NS3 G.

• Features

  IXFP3N120 is a Power MOSFET transistor with a rated voltage of 1200V, a current rating of 3A, and a low on-resistance of 1.4Ω. It is designed for high-power applications, ensuring efficient switching and minimal power losses. The transistor also features a ruggedized design, allowing it to withstand high voltage and temperature conditions.

• Pinout

  The IXFP3N120 is a power MOSFET transistor. It has 3 pins: gate, drain, and source. The gate pin is used to control the switching of the transistor, while the drain and source pins facilitate the flow of current.

• Manufacturer

  The manufacturer of the IXFP3N120 is IXYS Corporation. IXYS Corporation is a semiconductor company that specializes in the development, manufacture, and marketing of power semiconductors, advanced mixed-signal integrated circuits, and RF power products.

• Application Field

  The IXFP3N120 is a power metal-oxide-semiconductor field-effect transistor (MOSFET) used for high voltage switching applications. It can be found in various areas such as motor control systems, power supplies, and inverters.

• Package

  The IXFP3N120 chip is available in a TO-220 package type. It comes in a single form and has a size of approximately 10.16 mm x 15.88 mm, with its pins extending from the bottom of the package.