K4H561638H-UCB3
PDSO66 DDR DRAM 16MX16 0.7ns CMOS
Marques: Samsung
Pièce Fabricant #: K4H561638H-UCB3
Fiche de données: K4H561638H-UCB3 Fiche de données (PDF)
Colis/Caisse: TSSOP66
type de produit: MCU
Statut RoHS:
État des stocks: 4350 pièces, nouveau original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Ajouter à la nomenclatureK4H561638H-UCB3 Description générale
The K4H561638H-UCB3 is a synchronous dynamic random-access memory (SDRAM) module manufactured by Samsung. It features a capacity of 512 megabytes (MB) organized as 4 banks of 4 megabit (Mbit) x 16 bits. Operating at a voltage of 2.5 volts (V), it supports high-speed data transfer rates up to 166 megatransfers per second (MT/s). This memory module utilizes a double data rate (DDR) interface, enabling it to transfer data on both the rising and falling edges of the clock signal, effectively doubling the data transfer rate compared to traditional SDRAM.With a CAS latency of 3 clock cycles, this module offers fast access times, enhancing overall system performance. It conforms to the JEDEC standard and is designed for use in computing systems such as desktop PCs, laptops, and servers. The K4H561638H-UCB3 incorporates advanced features like auto precharge and auto refresh to optimize memory management and reliability. Its compact form factor and low power consumption make it suitable for various computing applications where high-speed and efficient memory access are essential
Caractéristiques
- 16M x 16 DDR2 SDRAM
- High-speed data transfer rates up to 400Mbps
- Double data rate architecture
- Operates at a power supply voltage of 1.8V
- Programmable CAS latency
- JEDEC standard 60-ball FBGA package
Application
- Mobile phones
- Tablets
- Internet of Things (IoT) devices
- Wearable technology
- Smart home devices
- Automotive electronics
- Digital cameras
- Industrial applications
- Medical devices
- Military and aerospace systems
Caractéristiques
Paramètre | Valeur | Paramètre | Valeur |
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Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Obsolete | Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC |
ECCN Code | EAR99 | HTS Code | 8542.32.00.24 |
Samacsys Manufacturer | SAMSUNG | Access Time-Max | 0.7 ns |
Clock Frequency-Max (fCLK) | 166 MHz | I/O Type | COMMON |
Interleaved Burst Length | 2,4,8 | JESD-30 Code | R-PDSO-G66 |
JESD-609 Code | e6 | Memory Density | 268435456 bit |
Memory IC Type | DDR1 DRAM | Memory Width | 16 |
Moisture Sensitivity Level | 3 | Number of Terminals | 66 |
Number of Words | 16777216 words | Number of Words Code | 16000000 |
Operating Temperature-Max | 70 °C | Organization | 16MX16 |
Output Characteristics | 3-STATE | Package Body Material | PLASTIC/EPOXY |
Package Code | TSSOP | Package Equivalence Code | TSSOP66,.46 |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
Peak Reflow Temperature (Cel) | 260 | Power Supplies | 2.3 V |
Qualification Status | Not Qualified | Refresh Cycles | 8192 |
Sequential Burst Length | 2,4,8 | Standby Current-Max | 0.003 A |
Supply Current-Max | 0.33 mA | Supply Voltage-Nom (Vsup) | 2.3 V |
Surface Mount | YES | Technology | CMOS |
Temperature Grade | COMMERCIAL | Terminal Finish | TIN BISMUTH |
Terminal Form | GULL WING | Terminal Pitch | 0.635 mm |
Terminal Position | DUAL |
Expédition
Type d'expédition | Frais d'expédition | Délai de mise en œuvre | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 jours | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 jours | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 jours | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 jours | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 jours | |
LA POSTE AÉRIENNE ENREGISTRÉE | $20.00-$40.00 (0.50 KG) | 2-5 jours |
Délai de traitement : les frais d'expédition dépendent des différentes zones et pays.
Paiement
Modalités de paiement | Frais de main | |
---|---|---|
Virement bancaire | facturer des frais bancaires de 30,00 $ US. | |
Pay Pal | facturer des frais de service de 4,0 %. | |
Carte de crédit | facturez des frais de service de 3,5%. | |
Western union | charge US.00 banking fee. | |
Paiement de Petit Montant | facturer des frais bancaires de 0,00 $ US. |
Garanties
1. Les composants électroniques que vous achetez incluent une garantie de 365 jours, nous garantissons la qualité du produit.
2. Si certains des articles que vous avez reçus ne sont pas de qualité parfaite, nous organiserons de manière responsable votre remboursement ou votre remplacement. Mais les articles doivent rester dans leur état d’origine.
Emballage
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Étape1 :Produit
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Étape2 :Emballage sous vide
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Étape3 :Sac antistatique
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Étape4 :Emballage individuel
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Étape5 :Boîtes d'emballage
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Étape6 :étiquette d'expédition à code-barres
Tous les produits seront emballés dans un sac antistatique. Expédié avec une protection antistatique ESD.
L'étiquette de l'emballage extérieur ESD utilisera les informations de notre société : numéro de pièce, marque et quantité.
Nous inspecterons toutes les marchandises avant expédition, garantirons que tous les produits sont en bon état et que les pièces sont neuves et correspondent à la fiche technique originale.
Une fois que toutes les marchandises sont garanties sans problème après l'emballage, nous les emballerons en toute sécurité et les enverrons par Global Express. Il présente une excellente résistance à la perforation et à la déchirure ainsi qu’une bonne intégrité du joint.
Points de pièce
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The K4H561638H-UCB3 chip is a high-density synchronous dynamic random-access memory (SDRAM) chip commonly used in electronics such as smartphones, tablets, and other devices. It offers fast data transfer speeds and high storage capacity, making it ideal for demanding applications that require quick and efficient data processing.
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Equivalent
The equivalent products of K4H561638H-UCB3 chip are Hynix HY5PS1G831C and Samsung K4H511638G-LCCC chips. They have similar specifications and can be used as alternatives for the K4H561638H-UCB3 chip. -
Features
The K4H561638H-UCB3 is a 512MB DDR SDRAM module with a 64Mx64 configuration. It operates at a high-speed clock frequency of 166MHz and is organized as a 4-bank / 4-bank x 8,192 refresh (8,192 cycle), with a 64ms. The module supports 400MHz and is ideal for applications requiring high-speed memory functionality. -
Pinout
The K4H561638H-UCB3 is a 512Mb DDR SDRAM chip with a 66-pin package. It has a 66-pin ball grid array (BGA) configuration and is used in computer memory modules. The pin functions include power supply, address inputs, data inputs/outputs, clock inputs, and control signals. -
Manufacturer
The manufacturer of the K4H561638H-UCB3 is Samsung. Samsung is a South Korean multinational conglomerate company that specializes in electronics, mobile devices, semiconductors, and other technology products. Samsung is one of the largest technology companies in the world and a leading producer of memory chips and other semiconductor components. -
Application Field
The K4H561638H-UCB3 is a 512MB DDR SDRAM module commonly used in desktop computers, laptops, networking equipment, and industrial applications. It is particularly suitable for high-performance computing tasks such as gaming, multimedia editing, and graphics rendering. -
Package
The K4H561638H-UCB3 chip comes in a Ball Grid Array (BGA) package. It is in the form of a memory module and has a size of 54mm x 90mm.
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La quantité minimum de commande commence à partir de 1 pièce.
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Les frais d'expédition internationaux les plus bas commencent à partir de 0,00 $
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Garantie de qualité de 365 jours pour tous les produits