IXTQ88N30P

Points de pièce

• The IXTQ88N30P is a high-power, N-channel, enhancement mode, insulated gate bipolar transistor (IGBT) designed for high current and high voltage applications. It features low on-state voltage drop, fast switching speed, and high ruggedness, making it ideal for use in motor control, power supplies, and renewable energy systems.

• Equivalent

  Possible equivalent products of IXTQ88N30P chip include Infineon's IRF830 and Fairchild's FDP8880. These MOSFET transistors have similar specifications and can be used as alternatives in circuit designs.

• Features

  1. MOSFET transistor 2. N-channel 3. 300V drain-source voltage 4. 88A continuous drain current 5. 0.038 ohm on-resistance 6. TO-3P package 7. Fast switching and low power loss 8. Ideal for high power applications and motor control circuits.

• Pinout

  The IXTQ88N30P is a power MOSFET with a TO-3P package. It has 3 pins: a Gate (G), Drain (D), and Source (S). The function of this MOSFET is to control the flow of current between the Drain and Source terminals by applying a voltage to the Gate terminal.

• Manufacturer

  IXTQ88N30P is manufactured by Infineon Technologies. Infineon Technologies is a German semiconductor manufacturing company that specializes in producing a wide range of semiconductor products for various industries including automotive, industrial, and consumer electronics. They are known for their high-quality and reliable semiconductor solutions.

• Application Field

  IXTQ88N30P is a power MOSFET transistor commonly used in switching applications such as power supplies, motor control, and inverters. It can also be used in lighting systems, automotive applications, and industrial equipment. With its high voltage and current ratings, it is suitable for high-power and high-voltage applications.

• Package

  The IXTQ88N30P chip is in a TO-3P package, with a TO-247 form factor, and has a size of 29.2 x 19.56 x 4.57 mm.