K4B1G1646E-HCF8

Points de pièce

• The K4B1G1646E-HCF8 is a 1Gb DDR3 SDRAM chip manufactured by Samsung. It features a high-speed data transfer rate of up to 1600 Mbps and operates at a voltage of 1.5V. This chip is commonly used in electronic devices such as computers, laptops, and servers to provide reliable and fast memory performance.

• Equivalent

  The equivalent products of the K4B1G1646E-HCF8 chip are Samsung K4B1G1646E-BCH9, SK Hynix H5TC2G83CFR-RDA, and Micron MT41J128M16HA-125.

• Features

  The K4B1G1646E-HCF8 is a 1Gb DDR3 SDRAM chip with a 64Mx16 configuration and a clock frequency of 800MHz. It operates at a voltage of 1.5V and has a data transfer rate of 1600Mbps. This chip is ideal for use in various electronic devices such as laptops, desktops, and servers.

• Pinout

  The K4B1G1646E-HCF8 is a 1Gb DDR3 SDRAM with a 96-ball FBGA package. It has a pin count of 96 and is commonly used in memory modules for computing devices.

• Manufacturer

  Samsung is the manufacturer of K4B1G1646E-HCF8. Samsung is a South Korean multinational conglomerate company that specializes in various sectors, including electronics, finance, and construction. As one of the largest technology companies in the world, Samsung produces a wide range of products such as smartphones, televisions, memory chips, and home appliances.

• Application Field

  The K4B1G1646E-HCF8 is a 4Gb DDR3 SDRAM chip commonly used in computer systems, networking equipment, and other electronic devices requiring high-speed memory. It is suitable for applications such as desktops, laptops, servers, graphics cards, and embedded systems, providing fast and reliable performance for data processing and storage.

• Package

  The K4B1G1646E-HCF8 chip is a DDR3 SDRAM (Synchronous Dynamic Random Access Memory) in a FBGA (Fine-pitch Ball Grid Array) package with a 78-ball form. It features a 1Gbit capacity organized as 128Mbit x 8.